Investigation on trap density depending on Si ratio in amorphous SiZnSnO thin-film transistors

Byeong Hyeon Lee; Sae Young Hong; Dae Hwan Kim; Sangsig Kim; Hyuck In Kwon; Sang Yeol Lee

doi:10.1016/j.physb.2019.08.006

Investigation on trap density depending on Si ratio in amorphous SiZnSnO thin-film transistors

Byeong Hyeon Lee, Sae Young Hong, Dae Hwan Kim, Sangsig Kim, Hyuck In Kwon, Sang Yeol Lee

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

High-performance amorphous SiZnSnO thin-film transistors (a-SZTO TFTs) were fabricated using radio-frequency (RF) magnetron sputtering. The noise spectral density of a-SZTO TFTs measured by using the drain current has been reported, and it was found that is possible to apply the conventional 1/f^a theory to the low-frequency noise (LFN) of the a-SZTO TFTs. The LFN characteristics of a-SZTO TFTs can be clearly identified by the correlated number fluctuation-mobility fluctuation model. Based on the noise properties, the interfacial trap density (N_T) was decreased from 2.32 × 10¹⁹ to 1.33 × 10¹⁹ cm⁻³ eV⁻¹ as increasing Si ratio in a-SZTO TFTs. The electrical characteristics and LFN properties of a-SZTO TFTs varied strongly depending on the Si ratio, mainly because the Si atom can act as an oxygen vacancy suppressor.

Original language	English
Article number	311629
Journal	Physica B: Condensed Matter
Volume	574
DOIs	https://doi.org/10.1016/j.physb.2019.08.006
Publication status	Published - 2019 Dec 1

Keywords

Amorphous oxide semiconductor
Low-frequency noise
Silicon zinc tin oxide
Thin film transistor

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1016/j.physb.2019.08.006

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title = "Investigation on trap density depending on Si ratio in amorphous SiZnSnO thin-film transistors",

abstract = "High-performance amorphous SiZnSnO thin-film transistors (a-SZTO TFTs) were fabricated using radio-frequency (RF) magnetron sputtering. The noise spectral density of a-SZTO TFTs measured by using the drain current has been reported, and it was found that is possible to apply the conventional 1/fa theory to the low-frequency noise (LFN) of the a-SZTO TFTs. The LFN characteristics of a-SZTO TFTs can be clearly identified by the correlated number fluctuation-mobility fluctuation model. Based on the noise properties, the interfacial trap density (NT) was decreased from 2.32 × 1019 to 1.33 × 1019 cm−3 eV−1 as increasing Si ratio in a-SZTO TFTs. The electrical characteristics and LFN properties of a-SZTO TFTs varied strongly depending on the Si ratio, mainly because the Si atom can act as an oxygen vacancy suppressor.",

keywords = "Amorphous oxide semiconductor, Low-frequency noise, Silicon zinc tin oxide, Thin film transistor",

author = "Lee, {Byeong Hyeon} and Hong, {Sae Young} and Kim, {Dae Hwan} and Sangsig Kim and Kwon, {Hyuck In} and Lee, {Sang Yeol}",

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year = "2019",

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doi = "10.1016/j.physb.2019.08.006",

language = "English",

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T1 - Investigation on trap density depending on Si ratio in amorphous SiZnSnO thin-film transistors

AU - Lee, Byeong Hyeon

AU - Hong, Sae Young

AU - Kim, Dae Hwan

AU - Kim, Sangsig

AU - Kwon, Hyuck In

AU - Lee, Sang Yeol

PY - 2019/12/1

Y1 - 2019/12/1

N2 - High-performance amorphous SiZnSnO thin-film transistors (a-SZTO TFTs) were fabricated using radio-frequency (RF) magnetron sputtering. The noise spectral density of a-SZTO TFTs measured by using the drain current has been reported, and it was found that is possible to apply the conventional 1/fa theory to the low-frequency noise (LFN) of the a-SZTO TFTs. The LFN characteristics of a-SZTO TFTs can be clearly identified by the correlated number fluctuation-mobility fluctuation model. Based on the noise properties, the interfacial trap density (NT) was decreased from 2.32 × 1019 to 1.33 × 1019 cm−3 eV−1 as increasing Si ratio in a-SZTO TFTs. The electrical characteristics and LFN properties of a-SZTO TFTs varied strongly depending on the Si ratio, mainly because the Si atom can act as an oxygen vacancy suppressor.

AB - High-performance amorphous SiZnSnO thin-film transistors (a-SZTO TFTs) were fabricated using radio-frequency (RF) magnetron sputtering. The noise spectral density of a-SZTO TFTs measured by using the drain current has been reported, and it was found that is possible to apply the conventional 1/fa theory to the low-frequency noise (LFN) of the a-SZTO TFTs. The LFN characteristics of a-SZTO TFTs can be clearly identified by the correlated number fluctuation-mobility fluctuation model. Based on the noise properties, the interfacial trap density (NT) was decreased from 2.32 × 1019 to 1.33 × 1019 cm−3 eV−1 as increasing Si ratio in a-SZTO TFTs. The electrical characteristics and LFN properties of a-SZTO TFTs varied strongly depending on the Si ratio, mainly because the Si atom can act as an oxygen vacancy suppressor.

KW - Amorphous oxide semiconductor

KW - Low-frequency noise

KW - Silicon zinc tin oxide

KW - Thin film transistor

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DO - 10.1016/j.physb.2019.08.006

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AN - SCOPUS:85071720344

SN - 0921-4526

VL - 574

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

M1 - 311629

ER -

Investigation on trap density depending on Si ratio in amorphous SiZnSnO thin-film transistors

Abstract

Keywords

ASJC Scopus subject areas

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