Abstract
High-performance amorphous SiZnSnO thin-film transistors (a-SZTO TFTs) were fabricated using radio-frequency (RF) magnetron sputtering. The noise spectral density of a-SZTO TFTs measured by using the drain current has been reported, and it was found that is possible to apply the conventional 1/fa theory to the low-frequency noise (LFN) of the a-SZTO TFTs. The LFN characteristics of a-SZTO TFTs can be clearly identified by the correlated number fluctuation-mobility fluctuation model. Based on the noise properties, the interfacial trap density (NT) was decreased from 2.32 × 1019 to 1.33 × 1019 cm−3 eV−1 as increasing Si ratio in a-SZTO TFTs. The electrical characteristics and LFN properties of a-SZTO TFTs varied strongly depending on the Si ratio, mainly because the Si atom can act as an oxygen vacancy suppressor.
Original language | English |
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Article number | 311629 |
Journal | Physica B: Condensed Matter |
Volume | 574 |
DOIs | |
Publication status | Published - 2019 Dec 1 |
Keywords
- Amorphous oxide semiconductor
- Low-frequency noise
- Silicon zinc tin oxide
- Thin film transistor
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering