Investigations on the influence of masks on the nature of selective area epitaxy

J. Thompson; A. K. Wood; N. Carr; P. M. Charles; A. J. Moseley; R. Pritchard; B. Hamilton; A. Chew; D. E. Sykes; T. Y. Seong

doi:10.1016/0022-0248(92)90464-T

Investigations on the influence of masks on the nature of selective area epitaxy

J. Thompson, A. K. Wood, N. Carr, P. M. Charles, A. J. Moseley, R. Pritchard, B. Hamilton, A. Chew, D. E. Sykes, T. Y. Seong

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

We have evaluated the structural and optical properties of epitaxial layers of GaInAs and GaInAsP grown on InP substrates patterned with SiO₂ masks. The effect of the mask on the MOVPE grown material surrounding and underlying the mask, and the device performance from this material has been assessed in detail for the first time.

Original language	English
Pages (from-to)	227-234
Number of pages	8
Journal	Journal of Crystal Growth
Volume	124
Issue number	1-4
DOIs	https://doi.org/10.1016/0022-0248(92)90464-T
Publication status	Published - 1992 Nov 1
Externally published	Yes

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/0022-0248(92)90464-T

Cite this

@article{51436576c4854acaadc1fce86769ea39,

title = "Investigations on the influence of masks on the nature of selective area epitaxy",

abstract = "We have evaluated the structural and optical properties of epitaxial layers of GaInAs and GaInAsP grown on InP substrates patterned with SiO2 masks. The effect of the mask on the MOVPE grown material surrounding and underlying the mask, and the device performance from this material has been assessed in detail for the first time.",

author = "J. Thompson and Wood, {A. K.} and N. Carr and Charles, {P. M.} and Moseley, {A. J.} and R. Pritchard and B. Hamilton and A. Chew and Sykes, {D. E.} and Seong, {T. Y.}",

note = "Funding Information: This work was partly supported by the UK DTI and SERC under LINK programme IED2/ 440/30/003, and GPT Limited and the EEC under RACE 1012.",

year = "1992",

month = nov,

day = "1",

doi = "10.1016/0022-0248(92)90464-T",

language = "English",

volume = "124",

pages = "227--234",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

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number = "1-4",

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TY - JOUR

T1 - Investigations on the influence of masks on the nature of selective area epitaxy

AU - Thompson, J.

AU - Wood, A. K.

AU - Carr, N.

AU - Charles, P. M.

AU - Moseley, A. J.

AU - Pritchard, R.

AU - Hamilton, B.

AU - Chew, A.

AU - Sykes, D. E.

AU - Seong, T. Y.

N1 - Funding Information: This work was partly supported by the UK DTI and SERC under LINK programme IED2/ 440/30/003, and GPT Limited and the EEC under RACE 1012.

PY - 1992/11/1

Y1 - 1992/11/1

N2 - We have evaluated the structural and optical properties of epitaxial layers of GaInAs and GaInAsP grown on InP substrates patterned with SiO2 masks. The effect of the mask on the MOVPE grown material surrounding and underlying the mask, and the device performance from this material has been assessed in detail for the first time.

AB - We have evaluated the structural and optical properties of epitaxial layers of GaInAs and GaInAsP grown on InP substrates patterned with SiO2 masks. The effect of the mask on the MOVPE grown material surrounding and underlying the mask, and the device performance from this material has been assessed in detail for the first time.

UR - http://www.scopus.com/inward/record.url?scp=0026942936&partnerID=8YFLogxK

U2 - 10.1016/0022-0248(92)90464-T

DO - 10.1016/0022-0248(92)90464-T

M3 - Article

AN - SCOPUS:0026942936

SN - 0022-0248

VL - 124

SP - 227

EP - 234

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1-4

ER -

Investigations on the influence of masks on the nature of selective area epitaxy

Abstract

ASJC Scopus subject areas

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