Ion beam-assisted solid phase epitaxy of SiGe and its application for analog memristors

Keonhee Kim, Dae Cheol Kang, Yeonjoo Jeong, Jaewook Kim, Suyoun Lee, Joon Young Kwak, Jongkil Park, Gyu Weon Hwang, Kyeong Seok Lee, Byeong Kwon Ju, Jong Keuk Park, Inho Kim

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)


Low dimensional defects such as dislocation in single crystal Si are known to serve as a fast diffusion path of metal ions. Recently, many efforts have been made to employ dislocations in single crystal based oxide and silicon as reliable Ag filaments in CBRAM (Conductive Bridge Resistive Memory). In this study, we report the synthesis of the SiGe epitaxy thin films by an ion beam-assisted solid phase epitaxy process and its application for analog CBRAM memristors. The epitaxial SiGe thin films were produced by implanting Ge ions into a LPCVD a-Si film, followed by post annealing. We found that the interface oxide between a-Si and c-Si hinders facile epitaxy growth of a-Si. Thus, the ion implantation parameters were carefully adjusted to effectively remove the interface oxide and produce the epitaxy thin films of high quality. The low dimensional defects, identified to be a stacking fault by TEM observations, were observed to be densely located near the surface region of the SiGe epitaxy thin film. We fabricated the CBRAM devices by sandwiching the epitaxial Si thin films between an active metal electrode of Ag and a heavily doped Si wafer. We investigated the performances of the CBRAM devices and discuss the effect of the low dimensional defects on the switching behaviors of the devices. We found that the Ge implantation enables forming-free CBRAM operation and also provides reduced variations in set and reset voltages. Furthermore, we performed the feasibility study on the use of the epitaxial Si based CBRAM for artificial synapse for neuromorphic computing.

Original languageEnglish
Article number161086
JournalJournal of Alloys and Compounds
Publication statusPublished - 2021 Dec 5

Bibliographical note

Funding Information:
This work was supported by Korea Institute of Science and Technology (Grant No. 2E31031 , 2E31041 ) and the National Research Foundation of Korea (NRF) ( NRF-2019M3F3A1A02072175 , NRF-2021M3F3A2A01037738 ). The authors would like to thank Dr. Jonghan Song and Weoncheol Lim at KIST for performing the implantation process and channeling experiments.

Publisher Copyright:
© 2021 The Authors


  • Forming-free operation
  • Ion implantation
  • Memristor
  • SiGe alloy
  • Solid phase epitaxy
  • Stacking fault

ASJC Scopus subject areas

  • Mechanics of Materials
  • Mechanical Engineering
  • Metals and Alloys
  • Materials Chemistry


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