Ion beam-assisted solid phase epitaxy of SiGe and its application for analog memristors

Keyphrases

• SiGe 100%
• Solid Phase Epitaxy 100%
• Conductive Bridging Random Access Memory (CBRAM) 100%
• Analog Memristor 100%
• Ion Beam Assisted 100%
• Dislocation 33%
• A-Si 33%
• Set Voltage 33%
• Epitaxial Si 33%
• SiGe Epitaxy 33%
• Interface Oxides 33%
• Oxides 16%
• Heavily Doped 16%
• Single Crystal 16%
• Metal Electrode 16%
• Post-annealing 16%
• Epitaxial 16%
• Metal Ions 16%
• Surface Zone 16%
• Si Wafer 16%
• Si-doped 16%
• Diffusion Path 16%
• Switching Behavior 16%
• Freeform 16%
• C-Si 16%
• Resistive Random Access Memory (ReRAM) 16%
• TEM Observation 16%
• Ion Implantation 16%
• Si-based 16%
• Active Metal 16%
• Epitaxy Growth 16%
• Low Pressure Chemical Vapor Deposition (LPCVD) 16%
• Stacking Faults 16%
• Fast Diffusion 16%
• Si Thin Film 16%
• Epitaxy 16%
• Ag Filament 16%
• Single Crystal Si 16%
• Memristor 16%
• Artificial Synapses 16%
• Implantation Parameters 16%
• Neuromorphic Computing 16%
• Conductive Bridge 16%
• SiGe Thin Film 16%

Material Science

• Thin Films 100%
• Solid Phase Epitaxy 100%
• Epitaxy 80%
• Oxide Interface 40%
• Single Crystal 40%
• Oxide Compound 20%
• Film 20%
• Annealing 20%
• Silicon 20%
• Ion Implantation 20%
• Low Pressure Chemical Vapor Deposition 20%
• Surface (Surface Science) 20%
• Germanium Ion 20%
• Neuromorphic Computing 20%
• Crystal Defect 20%