Ion conduction in nanoscale yttria-stabilized zirconia fabricated by atomic layer deposition with various doping rates

Kyung Sik Son; Kiho Bae; Jun Woo Kim; Jeong Suk Ha; Joon Hyung Shim

doi:10.1116/1.4755921

Ion conduction in nanoscale yttria-stabilized zirconia fabricated by atomic layer deposition with various doping rates

Kyung Sik Son, Kiho Bae, Jun Woo Kim, Jeong Suk Ha, Joon Hyung Shim

Research output: Contribution to journal › Article › peer-review

23 Citations (Scopus)

Abstract

The ion conduction of yttria-stabilized zirconia (YSZ) was studied by varying the doping ratios during atomic layer deposition (ALD). The ALD cycle ratio for the yttria and zirconia depositions was varied from 1:1 to 1:6, which corresponded to the doping ratios from 28.8% to 4.3%. The in-plane conductivity of ALD YSZ was enhanced by up to 2 orders of magnitude; the optimal ALD doping ratio (10.4%) was found to differ from that of bulk YSZ (8%). This different relationship between the doping ratio and the ion conduction for ALD YSZ versus bulk YSZ is due to the inhomogeneous doping in the vertical direction of the ALD YSZ films, as opposed to the homogenous doping of bulk YSZ.

Original language	English
Article number	01A107
Journal	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume	31
Issue number	1
DOIs	https://doi.org/10.1116/1.4755921
Publication status	Published - 2013 Jan

Bibliographical note

Funding Information:
J.H.S. is grateful to the National Research Foundation (NRF) of the Korean Ministry of Education, Science and Technology (MEST) (Grant No. NRF-2010-0005810) for their financial support.

ASJC Scopus subject areas

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films

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title = "Ion conduction in nanoscale yttria-stabilized zirconia fabricated by atomic layer deposition with various doping rates",

abstract = "The ion conduction of yttria-stabilized zirconia (YSZ) was studied by varying the doping ratios during atomic layer deposition (ALD). The ALD cycle ratio for the yttria and zirconia depositions was varied from 1:1 to 1:6, which corresponded to the doping ratios from 28.8% to 4.3%. The in-plane conductivity of ALD YSZ was enhanced by up to 2 orders of magnitude; the optimal ALD doping ratio (10.4%) was found to differ from that of bulk YSZ (8%). This different relationship between the doping ratio and the ion conduction for ALD YSZ versus bulk YSZ is due to the inhomogeneous doping in the vertical direction of the ALD YSZ films, as opposed to the homogenous doping of bulk YSZ.",

author = "{Sik Son}, Kyung and Kiho Bae and {Woo Kim}, Jun and {Suk Ha}, Jeong and {Hyung Shim}, Joon",

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AU - Sik Son, Kyung

AU - Bae, Kiho

AU - Woo Kim, Jun

AU - Suk Ha, Jeong

AU - Hyung Shim, Joon

N1 - Funding Information: J.H.S. is grateful to the National Research Foundation (NRF) of the Korean Ministry of Education, Science and Technology (MEST) (Grant No. NRF-2010-0005810) for their financial support.

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N2 - The ion conduction of yttria-stabilized zirconia (YSZ) was studied by varying the doping ratios during atomic layer deposition (ALD). The ALD cycle ratio for the yttria and zirconia depositions was varied from 1:1 to 1:6, which corresponded to the doping ratios from 28.8% to 4.3%. The in-plane conductivity of ALD YSZ was enhanced by up to 2 orders of magnitude; the optimal ALD doping ratio (10.4%) was found to differ from that of bulk YSZ (8%). This different relationship between the doping ratio and the ion conduction for ALD YSZ versus bulk YSZ is due to the inhomogeneous doping in the vertical direction of the ALD YSZ films, as opposed to the homogenous doping of bulk YSZ.

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Ion conduction in nanoscale yttria-stabilized zirconia fabricated by atomic layer deposition with various doping rates

Abstract

Bibliographical note

ASJC Scopus subject areas

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