Abstract
The ion conduction of yttria-stabilized zirconia (YSZ) was studied by varying the doping ratios during atomic layer deposition (ALD). The ALD cycle ratio for the yttria and zirconia depositions was varied from 1:1 to 1:6, which corresponded to the doping ratios from 28.8% to 4.3%. The in-plane conductivity of ALD YSZ was enhanced by up to 2 orders of magnitude; the optimal ALD doping ratio (10.4%) was found to differ from that of bulk YSZ (8%). This different relationship between the doping ratio and the ion conduction for ALD YSZ versus bulk YSZ is due to the inhomogeneous doping in the vertical direction of the ALD YSZ films, as opposed to the homogenous doping of bulk YSZ.
| Original language | English |
|---|---|
| Article number | 01A107 |
| Journal | Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films |
| Volume | 31 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 2013 Jan |
Bibliographical note
Funding Information:J.H.S. is grateful to the National Research Foundation (NRF) of the Korean Ministry of Education, Science and Technology (MEST) (Grant No. NRF-2010-0005810) for their financial support.
ASJC Scopus subject areas
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films