Ion induced damage in strained CdZnSe/ZnSe quantum well structures

L. M. Sparing; P. D. Wang; A. M. Mintairov; S. Lee; U. Bindley; C. H. Chen; S. S. Shi; J. K. Furdyna; J. L. Merz; G. L. Snider

doi:10.1116/1.589702

Ion induced damage in strained CdZnSe/ZnSe quantum well structures

L. M. Sparing, P. D. Wang, A. M. Mintairov, S. Lee, U. Bindley, C. H. Chen, S. S. Shi, J. K. Furdyna, J. L. Merz, G. L. Snider

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

A study of the effects of reactive ion etching on molecular beam epitaxy grown (Cd_xZn_1-xSe/ZnSe) strained quantum well (QW) samples using low temperature photoluminescence reveals a blue shift in the characteristic peak position of the 8 nm QW when exposed to plasmas of H₂, D₂, or He. Based on experimental results we suggest that this blue shift is a result of ion induced damage interacting with strain present in the as-grown QW. The QW is compressively strained at the interface with additional local strains in the QW lattice due to its random ternary alloy composition. The shallowest QW samples exhibit a peak in the blue shift as a function of bias voltage, with a reduced blue shift seen at high voltages.

Original language	English
Pages (from-to)	2652-2655
Number of pages	4
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	15
Issue number	6
DOIs	https://doi.org/10.1116/1.589702
Publication status	Published - 1997
Externally published	Yes

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

Access to Document

10.1116/1.589702

Cite this

@article{4d7ae0cd0fd04579b1ff66a031c74c7f,

title = "Ion induced damage in strained CdZnSe/ZnSe quantum well structures",

abstract = "A study of the effects of reactive ion etching on molecular beam epitaxy grown (CdxZn1-xSe/ZnSe) strained quantum well (QW) samples using low temperature photoluminescence reveals a blue shift in the characteristic peak position of the 8 nm QW when exposed to plasmas of H2, D2, or He. Based on experimental results we suggest that this blue shift is a result of ion induced damage interacting with strain present in the as-grown QW. The QW is compressively strained at the interface with additional local strains in the QW lattice due to its random ternary alloy composition. The shallowest QW samples exhibit a peak in the blue shift as a function of bias voltage, with a reduced blue shift seen at high voltages.",

author = "Sparing, {L. M.} and Wang, {P. D.} and Mintairov, {A. M.} and S. Lee and U. Bindley and Chen, {C. H.} and Shi, {S. S.} and Furdyna, {J. K.} and Merz, {J. L.} and Snider, {G. L.}",

year = "1997",

doi = "10.1116/1.589702",

language = "English",

volume = "15",

pages = "2652--2655",

journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

issn = "1071-1023",

publisher = "AVS Science and Technology Society",

number = "6",

}

TY - JOUR

T1 - Ion induced damage in strained CdZnSe/ZnSe quantum well structures

AU - Sparing, L. M.

AU - Wang, P. D.

AU - Mintairov, A. M.

AU - Lee, S.

AU - Bindley, U.

AU - Chen, C. H.

AU - Shi, S. S.

AU - Furdyna, J. K.

AU - Merz, J. L.

AU - Snider, G. L.

PY - 1997

Y1 - 1997

N2 - A study of the effects of reactive ion etching on molecular beam epitaxy grown (CdxZn1-xSe/ZnSe) strained quantum well (QW) samples using low temperature photoluminescence reveals a blue shift in the characteristic peak position of the 8 nm QW when exposed to plasmas of H2, D2, or He. Based on experimental results we suggest that this blue shift is a result of ion induced damage interacting with strain present in the as-grown QW. The QW is compressively strained at the interface with additional local strains in the QW lattice due to its random ternary alloy composition. The shallowest QW samples exhibit a peak in the blue shift as a function of bias voltage, with a reduced blue shift seen at high voltages.

AB - A study of the effects of reactive ion etching on molecular beam epitaxy grown (CdxZn1-xSe/ZnSe) strained quantum well (QW) samples using low temperature photoluminescence reveals a blue shift in the characteristic peak position of the 8 nm QW when exposed to plasmas of H2, D2, or He. Based on experimental results we suggest that this blue shift is a result of ion induced damage interacting with strain present in the as-grown QW. The QW is compressively strained at the interface with additional local strains in the QW lattice due to its random ternary alloy composition. The shallowest QW samples exhibit a peak in the blue shift as a function of bias voltage, with a reduced blue shift seen at high voltages.

UR - http://www.scopus.com/inward/record.url?scp=0346593427&partnerID=8YFLogxK

U2 - 10.1116/1.589702

DO - 10.1116/1.589702

M3 - Article

AN - SCOPUS:0346593427

SN - 1071-1023

VL - 15

SP - 2652

EP - 2655

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

IS - 6

ER -

Ion induced damage in strained CdZnSe/ZnSe quantum well structures

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this