Ion induced damage in strained CdZnSe/ZnSe quantum well structures

L. M. Sparing, P. D. Wang, A. M. Mintairov, S. Lee, U. Bindley, C. H. Chen, S. S. Shi, J. K. Furdyna, J. L. Merz, G. L. Snider

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A study of the effects of reactive ion etching on molecular beam epitaxy grown (CdxZn1-xSe/ZnSe) strained quantum well (QW) samples using low temperature photoluminescence reveals a blue shift in the characteristic peak position of the 8 nm QW when exposed to plasmas of H2, D2, or He. Based on experimental results we suggest that this blue shift is a result of ion induced damage interacting with strain present in the as-grown QW. The QW is compressively strained at the interface with additional local strains in the QW lattice due to its random ternary alloy composition. The shallowest QW samples exhibit a peak in the blue shift as a function of bias voltage, with a reduced blue shift seen at high voltages.

Original languageEnglish
Pages (from-to)2652-2655
Number of pages4
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Issue number6
Publication statusPublished - 1997
Externally publishedYes

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ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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