Ion induced damage in strained CdZnSe/ZnSe quantum well structures

L. M. Sparing; P. D. Wang; A. M. Mintairov; S. Lee; U. Bindley; C. H. Chen; S. S. Shi; J. K. Furdyna; J. L. Merz; G. L. Snider

doi:10.1116/1.589702

Ion induced damage in strained CdZnSe/ZnSe quantum well structures

L. M. Sparing^*
, P. D. Wang
, A. M. Mintairov
, S. Lee
, U. Bindley
, C. H. Chen
, S. S. Shi
, J. K. Furdyna
, J. L. Merz
, G. L. Snider

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

A study of the effects of reactive ion etching on molecular beam epitaxy grown (Cd_xZn_1-xSe/ZnSe) strained quantum well (QW) samples using low temperature photoluminescence reveals a blue shift in the characteristic peak position of the 8 nm QW when exposed to plasmas of H₂, D₂, or He. Based on experimental results we suggest that this blue shift is a result of ion induced damage interacting with strain present in the as-grown QW. The QW is compressively strained at the interface with additional local strains in the QW lattice due to its random ternary alloy composition. The shallowest QW samples exhibit a peak in the blue shift as a function of bias voltage, with a reduced blue shift seen at high voltages.

Original language	English
Pages (from-to)	2652-2655
Number of pages	4
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	15
Issue number	6
DOIs	https://doi.org/10.1116/1.589702
Publication status	Published - 1997
Externally published	Yes

Bibliographical note

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Copyright 2020 Elsevier B.V., All rights reserved.

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

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title = "Ion induced damage in strained CdZnSe/ZnSe quantum well structures",

abstract = "A study of the effects of reactive ion etching on molecular beam epitaxy grown (CdxZn1-xSe/ZnSe) strained quantum well (QW) samples using low temperature photoluminescence reveals a blue shift in the characteristic peak position of the 8 nm QW when exposed to plasmas of H2, D2, or He. Based on experimental results we suggest that this blue shift is a result of ion induced damage interacting with strain present in the as-grown QW. The QW is compressively strained at the interface with additional local strains in the QW lattice due to its random ternary alloy composition. The shallowest QW samples exhibit a peak in the blue shift as a function of bias voltage, with a reduced blue shift seen at high voltages.",

author = "Sparing, \{L. M.\} and Wang, \{P. D.\} and Mintairov, \{A. M.\} and S. Lee and U. Bindley and Chen, \{C. H.\} and Shi, \{S. S.\} and Furdyna, \{J. K.\} and Merz, \{J. L.\} and Snider, \{G. L.\}",

year = "1997",

doi = "10.1116/1.589702",

language = "English",

volume = "15",

pages = "2652--2655",

journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

issn = "1071-1023",

publisher = "AVS Science and Technology Society",

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}

TY - JOUR

T1 - Ion induced damage in strained CdZnSe/ZnSe quantum well structures

AU - Sparing, L. M.

AU - Wang, P. D.

AU - Mintairov, A. M.

AU - Lee, S.

AU - Bindley, U.

AU - Chen, C. H.

AU - Shi, S. S.

AU - Furdyna, J. K.

AU - Merz, J. L.

AU - Snider, G. L.

PY - 1997

Y1 - 1997

N2 - A study of the effects of reactive ion etching on molecular beam epitaxy grown (CdxZn1-xSe/ZnSe) strained quantum well (QW) samples using low temperature photoluminescence reveals a blue shift in the characteristic peak position of the 8 nm QW when exposed to plasmas of H2, D2, or He. Based on experimental results we suggest that this blue shift is a result of ion induced damage interacting with strain present in the as-grown QW. The QW is compressively strained at the interface with additional local strains in the QW lattice due to its random ternary alloy composition. The shallowest QW samples exhibit a peak in the blue shift as a function of bias voltage, with a reduced blue shift seen at high voltages.

AB - A study of the effects of reactive ion etching on molecular beam epitaxy grown (CdxZn1-xSe/ZnSe) strained quantum well (QW) samples using low temperature photoluminescence reveals a blue shift in the characteristic peak position of the 8 nm QW when exposed to plasmas of H2, D2, or He. Based on experimental results we suggest that this blue shift is a result of ion induced damage interacting with strain present in the as-grown QW. The QW is compressively strained at the interface with additional local strains in the QW lattice due to its random ternary alloy composition. The shallowest QW samples exhibit a peak in the blue shift as a function of bias voltage, with a reduced blue shift seen at high voltages.

UR - https://www.scopus.com/pages/publications/0346593427

U2 - 10.1116/1.589702

DO - 10.1116/1.589702

M3 - Article

AN - SCOPUS:0346593427

SN - 1071-1023

VL - 15

SP - 2652

EP - 2655

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

IS - 6

ER -

Ion induced damage in strained CdZnSe/ZnSe quantum well structures

Abstract

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