Ionic properties of ultrathin yttria-stabilized zirconia thin films fabricated by atomic layer deposition with water, oxygen, and ozone

Ho Keun Kim; Dong Young Jang; Jun Woo Kim; Kiho Bae; Joon Hyung Shim

doi:10.1016/j.tsf.2015.05.063

Ionic properties of ultrathin yttria-stabilized zirconia thin films fabricated by atomic layer deposition with water, oxygen, and ozone

Ho Keun Kim, Dong Young Jang, Jun Woo Kim, Kiho Bae, Joon Hyung Shim

Research output: Contribution to journal › Article › peer-review

14 Citations (Scopus)

Abstract

We compared the ionic properties of yttria-stabilized zirconia (YSZ) thin films prepared by atomic layer deposition (ALD) using various oxidants including water, oxygen, and ozone. Cross-plane conductivity measurements were performed at low temperature (50 °C) and high temperature (450 °C) using AC impedance spectroscopy. As a result, we have confirmed that the conductivity of ALD YSZ films below 300 °C is greater by several orders of magnitude compared to the nano-scale YSZ thin films synthesized by other conventional techniques. Among the ALD YSZ samples, ALD YSZ fabricated using water showed the highest conductivity while ALD YSZ fabricated using ozone showed the lowest. We have analyzed this result in relation with grain morphology characterized by X-ray diffraction (XRD) and atomic force microscopy (AFM), and the chemical binding states measured by X-ray photoelectron spectroscopy (XPS).

Original language	English
Pages (from-to)	441-445
Number of pages	5
Journal	Thin Solid Films
Volume	589
DOIs	https://doi.org/10.1016/j.tsf.2015.05.063
Publication status	Published - 2015 Aug 31

Bibliographical note

Funding Information:
This research is supported by the Human Resources Program in Energy Technology of the Korea Institute of Energy Technology Evaluation and Planning (KETEP) grant financial resource from the Ministry of Trade, Industry & Energy, Republic of Korea ( No. 20144010200770 ) and the Korea University Grant Program. This work is also supported by the Brain Korea 21 Plus Program ( 21A20131712520 ) through the National Research Foundation (NRF) funded by the Ministry of Education of Korea .

Publisher Copyright:
© 2015 Elsevier B.V.

Keywords

Atomic layer deposition
Ceramic thin film
Ionic conductivity
Oxidant source
Yttria-stabilized zirconia

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/j.tsf.2015.05.063

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title = "Ionic properties of ultrathin yttria-stabilized zirconia thin films fabricated by atomic layer deposition with water, oxygen, and ozone",

abstract = "We compared the ionic properties of yttria-stabilized zirconia (YSZ) thin films prepared by atomic layer deposition (ALD) using various oxidants including water, oxygen, and ozone. Cross-plane conductivity measurements were performed at low temperature (50 °C) and high temperature (450 °C) using AC impedance spectroscopy. As a result, we have confirmed that the conductivity of ALD YSZ films below 300 °C is greater by several orders of magnitude compared to the nano-scale YSZ thin films synthesized by other conventional techniques. Among the ALD YSZ samples, ALD YSZ fabricated using water showed the highest conductivity while ALD YSZ fabricated using ozone showed the lowest. We have analyzed this result in relation with grain morphology characterized by X-ray diffraction (XRD) and atomic force microscopy (AFM), and the chemical binding states measured by X-ray photoelectron spectroscopy (XPS).",

keywords = "Atomic layer deposition, Ceramic thin film, Ionic conductivity, Oxidant source, Yttria-stabilized zirconia",

author = "Kim, {Ho Keun} and Jang, {Dong Young} and Kim, {Jun Woo} and Kiho Bae and Shim, {Joon Hyung}",

note = "Funding Information: This research is supported by the Human Resources Program in Energy Technology of the Korea Institute of Energy Technology Evaluation and Planning (KETEP) grant financial resource from the Ministry of Trade, Industry & Energy, Republic of Korea ( No. 20144010200770 ) and the Korea University Grant Program. This work is also supported by the Brain Korea 21 Plus Program ( 21A20131712520 ) through the National Research Foundation (NRF) funded by the Ministry of Education of Korea . Publisher Copyright: {\textcopyright} 2015 Elsevier B.V.",

year = "2015",

month = aug,

day = "31",

doi = "10.1016/j.tsf.2015.05.063",

language = "English",

volume = "589",

pages = "441--445",

journal = "Thin Solid Films",

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TY - JOUR

T1 - Ionic properties of ultrathin yttria-stabilized zirconia thin films fabricated by atomic layer deposition with water, oxygen, and ozone

AU - Kim, Ho Keun

AU - Jang, Dong Young

AU - Kim, Jun Woo

AU - Bae, Kiho

AU - Shim, Joon Hyung

N1 - Funding Information: This research is supported by the Human Resources Program in Energy Technology of the Korea Institute of Energy Technology Evaluation and Planning (KETEP) grant financial resource from the Ministry of Trade, Industry & Energy, Republic of Korea ( No. 20144010200770 ) and the Korea University Grant Program. This work is also supported by the Brain Korea 21 Plus Program ( 21A20131712520 ) through the National Research Foundation (NRF) funded by the Ministry of Education of Korea . Publisher Copyright: © 2015 Elsevier B.V.

PY - 2015/8/31

Y1 - 2015/8/31

N2 - We compared the ionic properties of yttria-stabilized zirconia (YSZ) thin films prepared by atomic layer deposition (ALD) using various oxidants including water, oxygen, and ozone. Cross-plane conductivity measurements were performed at low temperature (50 °C) and high temperature (450 °C) using AC impedance spectroscopy. As a result, we have confirmed that the conductivity of ALD YSZ films below 300 °C is greater by several orders of magnitude compared to the nano-scale YSZ thin films synthesized by other conventional techniques. Among the ALD YSZ samples, ALD YSZ fabricated using water showed the highest conductivity while ALD YSZ fabricated using ozone showed the lowest. We have analyzed this result in relation with grain morphology characterized by X-ray diffraction (XRD) and atomic force microscopy (AFM), and the chemical binding states measured by X-ray photoelectron spectroscopy (XPS).

AB - We compared the ionic properties of yttria-stabilized zirconia (YSZ) thin films prepared by atomic layer deposition (ALD) using various oxidants including water, oxygen, and ozone. Cross-plane conductivity measurements were performed at low temperature (50 °C) and high temperature (450 °C) using AC impedance spectroscopy. As a result, we have confirmed that the conductivity of ALD YSZ films below 300 °C is greater by several orders of magnitude compared to the nano-scale YSZ thin films synthesized by other conventional techniques. Among the ALD YSZ samples, ALD YSZ fabricated using water showed the highest conductivity while ALD YSZ fabricated using ozone showed the lowest. We have analyzed this result in relation with grain morphology characterized by X-ray diffraction (XRD) and atomic force microscopy (AFM), and the chemical binding states measured by X-ray photoelectron spectroscopy (XPS).

KW - Atomic layer deposition

KW - Ceramic thin film

KW - Ionic conductivity

KW - Oxidant source

KW - Yttria-stabilized zirconia

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DO - 10.1016/j.tsf.2015.05.063

M3 - Article

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SN - 0040-6090

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SP - 441

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JO - Thin Solid Films

JF - Thin Solid Films

ER -

Ionic properties of ultrathin yttria-stabilized zirconia thin films fabricated by atomic layer deposition with water, oxygen, and ozone

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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