Isoelectronic dopant induced ordering transition in GaInP grown by organometallic vapour phase epitaxy

T. Y. Seong, S. M. Lee, R. T. Lee, G. B. Stringfellow

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6 Citations (Scopus)


Transmission electron microscope and transmission electron diffraction examination (TED) has been performed to investigate effects of Sb doping on ordering in organometallic vapour phase epitaxial (OMVPE) Ga0.5In0.5P layers grown on (001) GaAs singular and vicinal substrates at 620°C. The TED results show that adding Sb during the OMVPE growth of GaInP leads to a transition in ordering from CuPt type to triple period type (TPO). It is shown that the intensity of the CuPt superspots decreases with increasing Sb/P ratio in the vapour and is absent at a ratio of 8.0 × 104. A further increase in the ratio leads to the formation of TPO that is also reduced with increasing Sb concentration. Addition of [110] or [1̄10] steps by using misoriented substrates has virtually no effects on the TPO.

Original languageEnglish
Pages (from-to)L381-L385
JournalSurface Science
Issue number1
Publication statusPublished - 2000 Jun 1
Externally publishedYes

Bibliographical note

Funding Information:
This work was supported by the Brain Korea 21 project. Two authors (GBS and RTL) wish to thank the Department of Energy and the National Science Foundation for partial support of his work.

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry


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