Isoelectronic dopant induced ordering transition in GaInP grown by organometallic vapour phase epitaxy

T. Y. Seong; S. M. Lee; R. T. Lee; G. B. Stringfellow

doi:10.1016/S0039-6028(00)00404-0

Isoelectronic dopant induced ordering transition in GaInP grown by organometallic vapour phase epitaxy

T. Y. Seong, S. M. Lee, R. T. Lee, G. B. Stringfellow

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

Transmission electron microscope and transmission electron diffraction examination (TED) has been performed to investigate effects of Sb doping on ordering in organometallic vapour phase epitaxial (OMVPE) Ga_0.5In_0.5P layers grown on (001) GaAs singular and vicinal substrates at 620°C. The TED results show that adding Sb during the OMVPE growth of GaInP leads to a transition in ordering from CuPt type to triple period type (TPO). It is shown that the intensity of the CuPt superspots decreases with increasing Sb/P ratio in the vapour and is absent at a ratio of 8.0 × 10⁴. A further increase in the ratio leads to the formation of TPO that is also reduced with increasing Sb concentration. Addition of [110] or [1̄10] steps by using misoriented substrates has virtually no effects on the TPO.

Original language	English
Pages (from-to)	L381-L385
Journal	Surface Science
Volume	457
Issue number	1
DOIs	https://doi.org/10.1016/S0039-6028(00)00404-0
Publication status	Published - 2000 Jun 1
Externally published	Yes

Bibliographical note

Funding Information:
This work was supported by the Brain Korea 21 project. Two authors (GBS and RTL) wish to thank the Department of Energy and the National Science Foundation for partial support of his work.

ASJC Scopus subject areas

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Materials Chemistry

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title = "Isoelectronic dopant induced ordering transition in GaInP grown by organometallic vapour phase epitaxy",

abstract = "Transmission electron microscope and transmission electron diffraction examination (TED) has been performed to investigate effects of Sb doping on ordering in organometallic vapour phase epitaxial (OMVPE) Ga0.5In0.5P layers grown on (001) GaAs singular and vicinal substrates at 620°C. The TED results show that adding Sb during the OMVPE growth of GaInP leads to a transition in ordering from CuPt type to triple period type (TPO). It is shown that the intensity of the CuPt superspots decreases with increasing Sb/P ratio in the vapour and is absent at a ratio of 8.0 × 104. A further increase in the ratio leads to the formation of TPO that is also reduced with increasing Sb concentration. Addition of [110] or [{\=1}10] steps by using misoriented substrates has virtually no effects on the TPO.",

author = "Seong, {T. Y.} and Lee, {S. M.} and Lee, {R. T.} and Stringfellow, {G. B.}",

note = "Funding Information: This work was supported by the Brain Korea 21 project. Two authors (GBS and RTL) wish to thank the Department of Energy and the National Science Foundation for partial support of his work.",

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doi = "10.1016/S0039-6028(00)00404-0",

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T1 - Isoelectronic dopant induced ordering transition in GaInP grown by organometallic vapour phase epitaxy

AU - Seong, T. Y.

AU - Lee, S. M.

AU - Lee, R. T.

AU - Stringfellow, G. B.

N1 - Funding Information: This work was supported by the Brain Korea 21 project. Two authors (GBS and RTL) wish to thank the Department of Energy and the National Science Foundation for partial support of his work.

PY - 2000/6/1

Y1 - 2000/6/1

N2 - Transmission electron microscope and transmission electron diffraction examination (TED) has been performed to investigate effects of Sb doping on ordering in organometallic vapour phase epitaxial (OMVPE) Ga0.5In0.5P layers grown on (001) GaAs singular and vicinal substrates at 620°C. The TED results show that adding Sb during the OMVPE growth of GaInP leads to a transition in ordering from CuPt type to triple period type (TPO). It is shown that the intensity of the CuPt superspots decreases with increasing Sb/P ratio in the vapour and is absent at a ratio of 8.0 × 104. A further increase in the ratio leads to the formation of TPO that is also reduced with increasing Sb concentration. Addition of [110] or [1̄10] steps by using misoriented substrates has virtually no effects on the TPO.

AB - Transmission electron microscope and transmission electron diffraction examination (TED) has been performed to investigate effects of Sb doping on ordering in organometallic vapour phase epitaxial (OMVPE) Ga0.5In0.5P layers grown on (001) GaAs singular and vicinal substrates at 620°C. The TED results show that adding Sb during the OMVPE growth of GaInP leads to a transition in ordering from CuPt type to triple period type (TPO). It is shown that the intensity of the CuPt superspots decreases with increasing Sb/P ratio in the vapour and is absent at a ratio of 8.0 × 104. A further increase in the ratio leads to the formation of TPO that is also reduced with increasing Sb concentration. Addition of [110] or [1̄10] steps by using misoriented substrates has virtually no effects on the TPO.

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DO - 10.1016/S0039-6028(00)00404-0

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VL - 457

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JO - Surface Science

JF - Surface Science

IS - 1

ER -

Isoelectronic dopant induced ordering transition in GaInP grown by organometallic vapour phase epitaxy

Abstract

Bibliographical note

ASJC Scopus subject areas

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