ITO/Ag/ITO multilayer-based transparent conductive electrodes for ultraviolet light-emitting diodes

Jae Hoon Lee; Kie Young Woo; Kyeong Heon Kim; Hee Dong Kim; Tae Geun Kim

doi:10.1364/OL.38.005055

ITO/Ag/ITO multilayer-based transparent conductive electrodes for ultraviolet light-emitting diodes

Jae Hoon Lee, Kie Young Woo, Kyeong Heon Kim, Hee Dong Kim, Tae Geun Kim

Research output: Contribution to journal › Article › peer-review

49 Citations (Scopus)

Abstract

ITO/Ag/ITO (IAI) multilayer-based transparent conductive electrodes for ultraviolet light-emitting diodes are fabricated by reactive sputtering, optimized by annealing, and characterized with respect to electrical and optical properties. Increasing the annealing temperature from 300°C to 500°C decreased the sheet resistance and increased the transmittance. This may result from an observed improvement in the crystallinity of the IAI multilayer and a reduction in the near-UV absorption coefficient of Ag. We observed the lowest sheet resistance (9.21 Ω/sq) and the highest optical transmittance (88%) at 380 nm for the IAI multilayer samples annealed in N2 gas at 500°C.

Original language	English
Pages (from-to)	5055-5058
Number of pages	4
Journal	Optics Letters
Volume	38
Issue number	23
DOIs	https://doi.org/10.1364/OL.38.005055
Publication status	Published - 2013 Dec 1

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics

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@article{734d58881a3446c0bbdd8548d38c362e,

title = "ITO/Ag/ITO multilayer-based transparent conductive electrodes for ultraviolet light-emitting diodes",

abstract = "ITO/Ag/ITO (IAI) multilayer-based transparent conductive electrodes for ultraviolet light-emitting diodes are fabricated by reactive sputtering, optimized by annealing, and characterized with respect to electrical and optical properties. Increasing the annealing temperature from 300°C to 500°C decreased the sheet resistance and increased the transmittance. This may result from an observed improvement in the crystallinity of the IAI multilayer and a reduction in the near-UV absorption coefficient of Ag. We observed the lowest sheet resistance (9.21 Ω/sq) and the highest optical transmittance (88%) at 380 nm for the IAI multilayer samples annealed in N2 gas at 500°C.",

author = "Lee, {Jae Hoon} and Woo, {Kie Young} and Kim, {Kyeong Heon} and Kim, {Hee Dong} and Kim, {Tae Geun}",

year = "2013",

month = dec,

day = "1",

doi = "10.1364/OL.38.005055",

language = "English",

volume = "38",

pages = "5055--5058",

journal = "Optics Letters",

issn = "0146-9592",

publisher = "The Optical Society",

number = "23",

}

TY - JOUR

T1 - ITO/Ag/ITO multilayer-based transparent conductive electrodes for ultraviolet light-emitting diodes

AU - Lee, Jae Hoon

AU - Woo, Kie Young

AU - Kim, Kyeong Heon

AU - Kim, Hee Dong

AU - Kim, Tae Geun

PY - 2013/12/1

Y1 - 2013/12/1

N2 - ITO/Ag/ITO (IAI) multilayer-based transparent conductive electrodes for ultraviolet light-emitting diodes are fabricated by reactive sputtering, optimized by annealing, and characterized with respect to electrical and optical properties. Increasing the annealing temperature from 300°C to 500°C decreased the sheet resistance and increased the transmittance. This may result from an observed improvement in the crystallinity of the IAI multilayer and a reduction in the near-UV absorption coefficient of Ag. We observed the lowest sheet resistance (9.21 Ω/sq) and the highest optical transmittance (88%) at 380 nm for the IAI multilayer samples annealed in N2 gas at 500°C.

AB - ITO/Ag/ITO (IAI) multilayer-based transparent conductive electrodes for ultraviolet light-emitting diodes are fabricated by reactive sputtering, optimized by annealing, and characterized with respect to electrical and optical properties. Increasing the annealing temperature from 300°C to 500°C decreased the sheet resistance and increased the transmittance. This may result from an observed improvement in the crystallinity of the IAI multilayer and a reduction in the near-UV absorption coefficient of Ag. We observed the lowest sheet resistance (9.21 Ω/sq) and the highest optical transmittance (88%) at 380 nm for the IAI multilayer samples annealed in N2 gas at 500°C.

UR - http://www.scopus.com/inward/record.url?scp=84889069767&partnerID=8YFLogxK

U2 - 10.1364/OL.38.005055

DO - 10.1364/OL.38.005055

M3 - Article

C2 - 24281508

AN - SCOPUS:84889069767

SN - 0146-9592

VL - 38

SP - 5055

EP - 5058

JO - Optics Letters

JF - Optics Letters

IS - 23

ER -

ITO/Ag/ITO multilayer-based transparent conductive electrodes for ultraviolet light-emitting diodes

Abstract

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