ITO/Ag/ITO multilayer-based transparent conductive electrodes for ultraviolet light-emitting diodes

Jae Hoon Lee; Kie Young Woo; Kyeong Heon Kim; Hee Dong Kim; Tae Geun Kim

doi:10.1364/OL.38.005055

ITO/Ag/ITO multilayer-based transparent conductive electrodes for ultraviolet light-emitting diodes

Jae Hoon Lee, Kie Young Woo, Kyeong Heon Kim, Hee Dong Kim, Tae Geun Kim

Research output: Contribution to journal › Article › peer-review

51 Citations (Scopus)

Abstract

ITO/Ag/ITO (IAI) multilayer-based transparent conductive electrodes for ultraviolet light-emitting diodes are fabricated by reactive sputtering, optimized by annealing, and characterized with respect to electrical and optical properties. Increasing the annealing temperature from 300°C to 500°C decreased the sheet resistance and increased the transmittance. This may result from an observed improvement in the crystallinity of the IAI multilayer and a reduction in the near-UV absorption coefficient of Ag. We observed the lowest sheet resistance (9.21 Ω/sq) and the highest optical transmittance (88%) at 380 nm for the IAI multilayer samples annealed in N2 gas at 500°C.

Original language	English
Pages (from-to)	5055-5058
Number of pages	4
Journal	Optics Letters
Volume	38
Issue number	23
DOIs	https://doi.org/10.1364/OL.38.005055
Publication status	Published - 2013 Dec 1

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics

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title = "ITO/Ag/ITO multilayer-based transparent conductive electrodes for ultraviolet light-emitting diodes",

abstract = "ITO/Ag/ITO (IAI) multilayer-based transparent conductive electrodes for ultraviolet light-emitting diodes are fabricated by reactive sputtering, optimized by annealing, and characterized with respect to electrical and optical properties. Increasing the annealing temperature from 300°C to 500°C decreased the sheet resistance and increased the transmittance. This may result from an observed improvement in the crystallinity of the IAI multilayer and a reduction in the near-UV absorption coefficient of Ag. We observed the lowest sheet resistance (9.21 Ω/sq) and the highest optical transmittance (88%) at 380 nm for the IAI multilayer samples annealed in N2 gas at 500°C.",

author = "Lee, {Jae Hoon} and Woo, {Kie Young} and Kim, {Kyeong Heon} and Kim, {Hee Dong} and Kim, {Tae Geun}",

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AU - Lee, Jae Hoon

AU - Woo, Kie Young

AU - Kim, Kyeong Heon

AU - Kim, Hee Dong

AU - Kim, Tae Geun

PY - 2013/12/1

Y1 - 2013/12/1

N2 - ITO/Ag/ITO (IAI) multilayer-based transparent conductive electrodes for ultraviolet light-emitting diodes are fabricated by reactive sputtering, optimized by annealing, and characterized with respect to electrical and optical properties. Increasing the annealing temperature from 300°C to 500°C decreased the sheet resistance and increased the transmittance. This may result from an observed improvement in the crystallinity of the IAI multilayer and a reduction in the near-UV absorption coefficient of Ag. We observed the lowest sheet resistance (9.21 Ω/sq) and the highest optical transmittance (88%) at 380 nm for the IAI multilayer samples annealed in N2 gas at 500°C.

AB - ITO/Ag/ITO (IAI) multilayer-based transparent conductive electrodes for ultraviolet light-emitting diodes are fabricated by reactive sputtering, optimized by annealing, and characterized with respect to electrical and optical properties. Increasing the annealing temperature from 300°C to 500°C decreased the sheet resistance and increased the transmittance. This may result from an observed improvement in the crystallinity of the IAI multilayer and a reduction in the near-UV absorption coefficient of Ag. We observed the lowest sheet resistance (9.21 Ω/sq) and the highest optical transmittance (88%) at 380 nm for the IAI multilayer samples annealed in N2 gas at 500°C.

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ITO/Ag/ITO multilayer-based transparent conductive electrodes for ultraviolet light-emitting diodes

Abstract

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