ITO/AlN rod-based hybrid electrodes: effect of buffer layers in AlN rods on performance of 365-nm light-emitting diodes

Physics & Astronomy

• indium oxides 69%
• tin oxides 67%
• buffers 59%
• rods 57%
• light emitting diodes 55%
• electrodes 43%
• performance 30%
• oxide films 21%
• conduction 15%
• electric potential 12%
• ITO (semiconductors) 12%
• electrical faults 11%
• transmittance 9%
• leakage 9%
• output 6%
• metals 5%

Engineering & Materials Science

• Buffer layers 100%
• Tin oxides 96%
• Indium 91%
• Light emitting diodes 69%
• Electrodes 53%
• Oxide films 28%
• Leakage currents 12%
• Electric potential 12%
• Metals 7%

Chemical Compounds

• Rod Like Crystal 65%
• Buffer Solution 45%
• Behavior as Electrode 35%
• Liquid Film 16%
• Voltage 16%
• Leakage Current 15%
• Spreading 12%
• Transmittance 11%
• Metal 5%
• Surface 3%