Abstract
Using Si/SiGe heterojunction bipolar transistors with a maximum oscillation frequency of 52 GHz and a novel structure for passive components, a two-stage K-band lumped-element amplifier has been designed and fabricated on high-resistivity Si substrates. The chip size including biasing and RF chokes is 0.92×0.67 mm2.
Original language | English |
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Pages | 17-20 |
Number of pages | 4 |
Publication status | Published - 1998 |
Externally published | Yes |
Event | Proceedings of the 1998 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium - Baltimore, MD, USA Duration: 1998 Jun 7 → 1998 Jun 11 |
Other
Other | Proceedings of the 1998 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium |
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City | Baltimore, MD, USA |
Period | 98/6/7 → 98/6/11 |
ASJC Scopus subject areas
- General Engineering