Kerf-less layer transfer of monocrystalline silicon used by hydrogen implantation

Changbum Lee; Jaewoo Lee; Jiwoong Kim; Bo Yun Jang; Wooyoung Yoon

doi:10.1166/jnn.2016.13206

Kerf-less layer transfer of monocrystalline silicon used by hydrogen implantation

Changbum Lee, Jaewoo Lee, Jiwoong Kim, Bo Yun Jang, Wooyoung Yoon

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

In this study, we performed a quantitative analysis of the kerfless layer transfer behavior of silicon resulting from hydrogen implantation. To determine the optimum implantation energy, a Monte Carlo simulation tool called Stopping and Range of Ions in Matter (SRIM) was employed. Based on the simulation results, experimental methods that reflected the calculated SRIM values were adopted. The effect of hydrogen implantation in single crystalline silicon was investigated at 2.0 MeV, which corresponds to a maximum hydrogen concentration depth of 48.7 μm. Exfoliation behaviors were also compared as a function of both ion implantation and the crystallographic orientation of silicon. We conclude that 6 × 10¹⁶ atoms/cm² are required for separating samples in '111'-oriented silicon, and that 9 × 10¹⁶ atoms/cm² are required for the '100' direction. An electron probe X-ray microanalyzer (EPMA) and a scanning electron microscope (SEM) were used to determine the mean projection range and analyze the crack distribution initiated by hydrogen diffusion.

Original language	English
Pages (from-to)	10620-10624
Number of pages	5
Journal	Journal of Nanoscience and Nanotechnology
Volume	16
Issue number	10
DOIs	https://doi.org/10.1166/jnn.2016.13206
Publication status	Published - 2016 Oct

Bibliographical note

Funding Information:
This work was supported by the International Collaborative Energy Technology RandD Program of Energy Technology Evaluation and Planning (KETEP), granted financial resource from the Ministry of Trade, Industry and Energy, Republic of Korea. (No. 20148520120040). This work was conducted under the framework of the Research and Development Program of the Korea Institute of Energy Research (KIER) (B6-2426). This study was supported by a grant from the National Research Foundation of Korea (NRF), funded by the Korean government (MEST) (2011-0028757).

Publisher Copyright:
Copyright © 2016 American Scientific Publishers All rights reserved.

Keywords

Implantation
Kerf-Less
Wafering

ASJC Scopus subject areas

Bioengineering
General Chemistry
Biomedical Engineering
General Materials Science
Condensed Matter Physics

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10.1166/jnn.2016.13206

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title = "Kerf-less layer transfer of monocrystalline silicon used by hydrogen implantation",

abstract = "In this study, we performed a quantitative analysis of the kerfless layer transfer behavior of silicon resulting from hydrogen implantation. To determine the optimum implantation energy, a Monte Carlo simulation tool called Stopping and Range of Ions in Matter (SRIM) was employed. Based on the simulation results, experimental methods that reflected the calculated SRIM values were adopted. The effect of hydrogen implantation in single crystalline silicon was investigated at 2.0 MeV, which corresponds to a maximum hydrogen concentration depth of 48.7 μm. Exfoliation behaviors were also compared as a function of both ion implantation and the crystallographic orientation of silicon. We conclude that 6 × 1016 atoms/cm2 are required for separating samples in '111'-oriented silicon, and that 9 × 1016 atoms/cm2 are required for the '100' direction. An electron probe X-ray microanalyzer (EPMA) and a scanning electron microscope (SEM) were used to determine the mean projection range and analyze the crack distribution initiated by hydrogen diffusion.",

keywords = "Implantation, Kerf-Less, Wafering",

author = "Changbum Lee and Jaewoo Lee and Jiwoong Kim and Jang, {Bo Yun} and Wooyoung Yoon",

note = "Funding Information: This work was supported by the International Collaborative Energy Technology RandD Program of Energy Technology Evaluation and Planning (KETEP), granted financial resource from the Ministry of Trade, Industry and Energy, Republic of Korea. (No. 20148520120040). This work was conducted under the framework of the Research and Development Program of the Korea Institute of Energy Research (KIER) (B6-2426). This study was supported by a grant from the National Research Foundation of Korea (NRF), funded by the Korean government (MEST) (2011-0028757). Publisher Copyright: Copyright {\textcopyright} 2016 American Scientific Publishers All rights reserved.",

year = "2016",

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doi = "10.1166/jnn.2016.13206",

language = "English",

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pages = "10620--10624",

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AU - Kim, Jiwoong

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AU - Yoon, Wooyoung

N1 - Funding Information: This work was supported by the International Collaborative Energy Technology RandD Program of Energy Technology Evaluation and Planning (KETEP), granted financial resource from the Ministry of Trade, Industry and Energy, Republic of Korea. (No. 20148520120040). This work was conducted under the framework of the Research and Development Program of the Korea Institute of Energy Research (KIER) (B6-2426). This study was supported by a grant from the National Research Foundation of Korea (NRF), funded by the Korean government (MEST) (2011-0028757). Publisher Copyright: Copyright © 2016 American Scientific Publishers All rights reserved.

PY - 2016/10

Y1 - 2016/10

N2 - In this study, we performed a quantitative analysis of the kerfless layer transfer behavior of silicon resulting from hydrogen implantation. To determine the optimum implantation energy, a Monte Carlo simulation tool called Stopping and Range of Ions in Matter (SRIM) was employed. Based on the simulation results, experimental methods that reflected the calculated SRIM values were adopted. The effect of hydrogen implantation in single crystalline silicon was investigated at 2.0 MeV, which corresponds to a maximum hydrogen concentration depth of 48.7 μm. Exfoliation behaviors were also compared as a function of both ion implantation and the crystallographic orientation of silicon. We conclude that 6 × 1016 atoms/cm2 are required for separating samples in '111'-oriented silicon, and that 9 × 1016 atoms/cm2 are required for the '100' direction. An electron probe X-ray microanalyzer (EPMA) and a scanning electron microscope (SEM) were used to determine the mean projection range and analyze the crack distribution initiated by hydrogen diffusion.

AB - In this study, we performed a quantitative analysis of the kerfless layer transfer behavior of silicon resulting from hydrogen implantation. To determine the optimum implantation energy, a Monte Carlo simulation tool called Stopping and Range of Ions in Matter (SRIM) was employed. Based on the simulation results, experimental methods that reflected the calculated SRIM values were adopted. The effect of hydrogen implantation in single crystalline silicon was investigated at 2.0 MeV, which corresponds to a maximum hydrogen concentration depth of 48.7 μm. Exfoliation behaviors were also compared as a function of both ion implantation and the crystallographic orientation of silicon. We conclude that 6 × 1016 atoms/cm2 are required for separating samples in '111'-oriented silicon, and that 9 × 1016 atoms/cm2 are required for the '100' direction. An electron probe X-ray microanalyzer (EPMA) and a scanning electron microscope (SEM) were used to determine the mean projection range and analyze the crack distribution initiated by hydrogen diffusion.

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Kerf-less layer transfer of monocrystalline silicon used by hydrogen implantation

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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