Kink-free design of submicron MRAM cell

Kyoung Jin Lee; W. Park

doi:10.1109/INTMAG.2003.1230564

Kink-free design of submicron MRAM cell

Kyoung Jin Lee, W. Park

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

In this work, full micromagnetic simulations with comparing experimental measurements have been performed for broad range of Ms (400∼1600 emu/cm³), thickness of free layer (1∼5 nm) and aspect ratio of MRAM cell (1.5∼3). We used cell with round edge, since perfect rectangular or elliptical shape is hardly obtained from conventional lithography technology. For the round cell, edge radius was 80 nm and short width was 0.2μm.

Original language	English
Title of host publication	Intermag 2003 - Program of the 2003 IEEE International Magnetics Conference
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	0780376471, 9780780376472
DOIs	https://doi.org/10.1109/INTMAG.2003.1230564
Publication status	Published - 2003 Jan 1
Externally published	Yes
Event	2003 IEEE International Magnetics Conference, Intermag 2003 - Boston, United States Duration: 2003 Mar 30 → 2003 Apr 3

Other

Other	2003 IEEE International Magnetics Conference, Intermag 2003
Country/Territory	United States
City	Boston
Period	03/3/30 → 03/4/3

Keywords

Lithography
Magnetic switching
Magnetoresistance
Micromagnetics
Performance evaluation
Random access memory
Saturation magnetization
Shape
Switches
Thickness measurement

ASJC Scopus subject areas

Engineering(all)

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10.1109/INTMAG.2003.1230564

Cite this

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title = "Kink-free design of submicron MRAM cell",

abstract = "In this work, full micromagnetic simulations with comparing experimental measurements have been performed for broad range of Ms (400∼1600 emu/cm3), thickness of free layer (1∼5 nm) and aspect ratio of MRAM cell (1.5∼3). We used cell with round edge, since perfect rectangular or elliptical shape is hardly obtained from conventional lithography technology. For the round cell, edge radius was 80 nm and short width was 0.2μm.",

keywords = "Lithography, Magnetic switching, Magnetoresistance, Micromagnetics, Performance evaluation, Random access memory, Saturation magnetization, Shape, Switches, Thickness measurement",

author = "Lee, {Kyoung Jin} and W. Park",

year = "2003",

month = jan,

day = "1",

doi = "10.1109/INTMAG.2003.1230564",

language = "English",

booktitle = "Intermag 2003 - Program of the 2003 IEEE International Magnetics Conference",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "2003 IEEE International Magnetics Conference, Intermag 2003 ; Conference date: 30-03-2003 Through 03-04-2003",

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TY - GEN

T1 - Kink-free design of submicron MRAM cell

AU - Lee, Kyoung Jin

AU - Park, W.

PY - 2003/1/1

Y1 - 2003/1/1

N2 - In this work, full micromagnetic simulations with comparing experimental measurements have been performed for broad range of Ms (400∼1600 emu/cm3), thickness of free layer (1∼5 nm) and aspect ratio of MRAM cell (1.5∼3). We used cell with round edge, since perfect rectangular or elliptical shape is hardly obtained from conventional lithography technology. For the round cell, edge radius was 80 nm and short width was 0.2μm.

AB - In this work, full micromagnetic simulations with comparing experimental measurements have been performed for broad range of Ms (400∼1600 emu/cm3), thickness of free layer (1∼5 nm) and aspect ratio of MRAM cell (1.5∼3). We used cell with round edge, since perfect rectangular or elliptical shape is hardly obtained from conventional lithography technology. For the round cell, edge radius was 80 nm and short width was 0.2μm.

KW - Lithography

KW - Magnetic switching

KW - Magnetoresistance

KW - Micromagnetics

KW - Performance evaluation

KW - Random access memory

KW - Saturation magnetization

KW - Shape

KW - Switches

KW - Thickness measurement

UR - http://www.scopus.com/inward/record.url?scp=84949483629&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84949483629&partnerID=8YFLogxK

U2 - 10.1109/INTMAG.2003.1230564

DO - 10.1109/INTMAG.2003.1230564

M3 - Conference contribution

AN - SCOPUS:84949483629

BT - Intermag 2003 - Program of the 2003 IEEE International Magnetics Conference

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2003 IEEE International Magnetics Conference, Intermag 2003

Y2 - 30 March 2003 through 3 April 2003

ER -

Kink-free design of submicron MRAM cell

Abstract

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Keywords

ASJC Scopus subject areas

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