Kink-free design of submicron MRAM cell

Kyoung Jin Lee, W. Park

Research output: Chapter in Book/Report/Conference proceedingConference contribution


In this work, full micromagnetic simulations with comparing experimental measurements have been performed for broad range of Ms (400∼1600 emu/cm3), thickness of free layer (1∼5 nm) and aspect ratio of MRAM cell (1.5∼3). We used cell with round edge, since perfect rectangular or elliptical shape is hardly obtained from conventional lithography technology. For the round cell, edge radius was 80 nm and short width was 0.2μm.

Original languageEnglish
Title of host publicationIntermag 2003 - Program of the 2003 IEEE International Magnetics Conference
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)0780376471, 9780780376472
Publication statusPublished - 2003 Jan 1
Externally publishedYes
Event2003 IEEE International Magnetics Conference, Intermag 2003 - Boston, United States
Duration: 2003 Mar 302003 Apr 3


Other2003 IEEE International Magnetics Conference, Intermag 2003
Country/TerritoryUnited States


  • Lithography
  • Magnetic switching
  • Magnetoresistance
  • Micromagnetics
  • Performance evaluation
  • Random access memory
  • Saturation magnetization
  • Shape
  • Switches
  • Thickness measurement

ASJC Scopus subject areas

  • General Engineering


Dive into the research topics of 'Kink-free design of submicron MRAM cell'. Together they form a unique fingerprint.

Cite this