Abstract
In this work, full micromagnetic simulations with comparing experimental measurements have been performed for broad range of Ms (400∼1600 emu/cm3), thickness of free layer (1∼5 nm) and aspect ratio of MRAM cell (1.5∼3). We used cell with round edge, since perfect rectangular or elliptical shape is hardly obtained from conventional lithography technology. For the round cell, edge radius was 80 nm and short width was 0.2μm.
Original language | English |
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Title of host publication | Intermag 2003 - Program of the 2003 IEEE International Magnetics Conference |
Publisher | Institute of Electrical and Electronics Engineers Inc. |
ISBN (Electronic) | 0780376471, 9780780376472 |
DOIs | |
Publication status | Published - 2003 Jan 1 |
Externally published | Yes |
Event | 2003 IEEE International Magnetics Conference, Intermag 2003 - Boston, United States Duration: 2003 Mar 30 → 2003 Apr 3 |
Other
Other | 2003 IEEE International Magnetics Conference, Intermag 2003 |
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Country/Territory | United States |
City | Boston |
Period | 03/3/30 → 03/4/3 |
Keywords
- Lithography
- Magnetic switching
- Magnetoresistance
- Micromagnetics
- Performance evaluation
- Random access memory
- Saturation magnetization
- Shape
- Switches
- Thickness measurement
ASJC Scopus subject areas
- Engineering(all)