Kondo effect of an antidot in the integer quantum Hall regime: A microscopic calculation

H. S. Sim, N. Y. Hwang, M. Kataoka, Hangmo Yi, M. S. Choi, S. R.Eric Yang

    Research output: Contribution to journalConference articlepeer-review

    4 Citations (Scopus)

    Abstract

    An electron antidot system is an open geometry problem and often requires heavy calculations to compute its physical properties. Such a difficulty can be avoided by transforming an electron antidot system to a system of hole quantum dot since the transformed system contains only a finite number of confined holes. Using this transformation, we present a microscopic approach to study electronic properties of an antidot in the integer quantum Hall regime. Based on this approach we discuss various conditions under which the Kondo effect may be present.

    Original languageEnglish
    Pages (from-to)554-557
    Number of pages4
    JournalPhysica E: Low-Dimensional Systems and Nanostructures
    Volume22
    Issue number1-3
    DOIs
    Publication statusPublished - 2004 Apr
    Event15th International Conference on ELectronic Propreties - Nara, Japan
    Duration: 2003 Jul 142003 Jul 18

    Bibliographical note

    Copyright:
    Copyright 2008 Elsevier B.V., All rights reserved.

    Keywords

    • Antidot
    • Kondo effect
    • Quantum Hall effect

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Atomic and Molecular Physics, and Optics
    • Condensed Matter Physics

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