Abstract
An electron antidot system is an open geometry problem and often requires heavy calculations to compute its physical properties. Such a difficulty can be avoided by transforming an electron antidot system to a system of hole quantum dot since the transformed system contains only a finite number of confined holes. Using this transformation, we present a microscopic approach to study electronic properties of an antidot in the integer quantum Hall regime. Based on this approach we discuss various conditions under which the Kondo effect may be present.
Original language | English |
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Pages (from-to) | 554-557 |
Number of pages | 4 |
Journal | Physica E: Low-Dimensional Systems and Nanostructures |
Volume | 22 |
Issue number | 1-3 |
DOIs | |
Publication status | Published - 2004 Apr |
Event | 15th International Conference on ELectronic Propreties - Nara, Japan Duration: 2003 Jul 14 → 2003 Jul 18 |
Bibliographical note
Copyright:Copyright 2008 Elsevier B.V., All rights reserved.
Keywords
- Antidot
- Kondo effect
- Quantum Hall effect
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics