Large-area suspended graphene on GaN nanopillars

Chongmin Lee; Byung Jae Kim; Fan Ren; S. J. Pearton; Jihyun Kim

doi:10.1116/1.3654042

Large-area suspended graphene on GaN nanopillars

Chongmin Lee, Byung Jae Kim, Fan Ren, S. J. Pearton, Jihyun Kim

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

The authors have demonstrated large-area suspended graphene on GaN nanopillars predefined by nanosphere lithography and inductively coupled plasma etching. The graphene was successfully suspended over large areas without ripples and corrugations. Scanning electron microscopy, atomic force microscopy and micro-Raman spectroscopy were used to characterize the properties of the suspended graphene on nanopillars. The thermal properties of the suspended and supported graphene were investigated by varying the underlying GaN nanopilllar geometries from flat-top to sharp-cone morphologies and heating the resulting structures via irradiation with laser powers of 1.53 mW, 8.03 mW, and 16.19 mW. The heat transfer was effective even when the contact area between the suspended graphene and the supporting substrate was small, due to the high thermal conductivities of graphene and GaN. The extremely high thermal conductivity of the graphene can improve the thermal management in GaN-based high power electronic and optoelectronics devices, a critical factor for their long-term reliability.

Original language	English
Article number	060601
Journal	Journal of Vacuum Science and Technology B
Volume	29
Issue number	6
DOIs	https://doi.org/10.1116/1.3654042
Publication status	Published - 2011 Nov

Bibliographical note

Funding Information:
This research was supported by New & Renewable Energy R&D program (R0903962) under the Ministry of Knowledge Economy, Basic Science Research Program (2009-0088551 and 2010-0008242) through the National Research Foundation of Korea, and by the Carbon Dioxide Reduction and Sequestration Center, a 21st Century Frontier R&D Program funded by the Ministry of Education, Science and Technology. The work at UF is partially funded by an AFOSR MURI monitored by Gregg Jessen.

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Instrumentation
Process Chemistry and Technology
Surfaces, Coatings and Films
Electrical and Electronic Engineering
Materials Chemistry

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title = "Large-area suspended graphene on GaN nanopillars",

abstract = "The authors have demonstrated large-area suspended graphene on GaN nanopillars predefined by nanosphere lithography and inductively coupled plasma etching. The graphene was successfully suspended over large areas without ripples and corrugations. Scanning electron microscopy, atomic force microscopy and micro-Raman spectroscopy were used to characterize the properties of the suspended graphene on nanopillars. The thermal properties of the suspended and supported graphene were investigated by varying the underlying GaN nanopilllar geometries from flat-top to sharp-cone morphologies and heating the resulting structures via irradiation with laser powers of 1.53 mW, 8.03 mW, and 16.19 mW. The heat transfer was effective even when the contact area between the suspended graphene and the supporting substrate was small, due to the high thermal conductivities of graphene and GaN. The extremely high thermal conductivity of the graphene can improve the thermal management in GaN-based high power electronic and optoelectronics devices, a critical factor for their long-term reliability.",

author = "Chongmin Lee and Kim, {Byung Jae} and Fan Ren and Pearton, {S. J.} and Jihyun Kim",

note = "Funding Information: This research was supported by New & Renewable Energy R&D program (R0903962) under the Ministry of Knowledge Economy, Basic Science Research Program (2009-0088551 and 2010-0008242) through the National Research Foundation of Korea, and by the Carbon Dioxide Reduction and Sequestration Center, a 21st Century Frontier R&D Program funded by the Ministry of Education, Science and Technology. The work at UF is partially funded by an AFOSR MURI monitored by Gregg Jessen.",

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doi = "10.1116/1.3654042",

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AU - Ren, Fan

AU - Pearton, S. J.

AU - Kim, Jihyun

N1 - Funding Information: This research was supported by New & Renewable Energy R&D program (R0903962) under the Ministry of Knowledge Economy, Basic Science Research Program (2009-0088551 and 2010-0008242) through the National Research Foundation of Korea, and by the Carbon Dioxide Reduction and Sequestration Center, a 21st Century Frontier R&D Program funded by the Ministry of Education, Science and Technology. The work at UF is partially funded by an AFOSR MURI monitored by Gregg Jessen.

PY - 2011/11

Y1 - 2011/11

N2 - The authors have demonstrated large-area suspended graphene on GaN nanopillars predefined by nanosphere lithography and inductively coupled plasma etching. The graphene was successfully suspended over large areas without ripples and corrugations. Scanning electron microscopy, atomic force microscopy and micro-Raman spectroscopy were used to characterize the properties of the suspended graphene on nanopillars. The thermal properties of the suspended and supported graphene were investigated by varying the underlying GaN nanopilllar geometries from flat-top to sharp-cone morphologies and heating the resulting structures via irradiation with laser powers of 1.53 mW, 8.03 mW, and 16.19 mW. The heat transfer was effective even when the contact area between the suspended graphene and the supporting substrate was small, due to the high thermal conductivities of graphene and GaN. The extremely high thermal conductivity of the graphene can improve the thermal management in GaN-based high power electronic and optoelectronics devices, a critical factor for their long-term reliability.

AB - The authors have demonstrated large-area suspended graphene on GaN nanopillars predefined by nanosphere lithography and inductively coupled plasma etching. The graphene was successfully suspended over large areas without ripples and corrugations. Scanning electron microscopy, atomic force microscopy and micro-Raman spectroscopy were used to characterize the properties of the suspended graphene on nanopillars. The thermal properties of the suspended and supported graphene were investigated by varying the underlying GaN nanopilllar geometries from flat-top to sharp-cone morphologies and heating the resulting structures via irradiation with laser powers of 1.53 mW, 8.03 mW, and 16.19 mW. The heat transfer was effective even when the contact area between the suspended graphene and the supporting substrate was small, due to the high thermal conductivities of graphene and GaN. The extremely high thermal conductivity of the graphene can improve the thermal management in GaN-based high power electronic and optoelectronics devices, a critical factor for their long-term reliability.

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Large-area suspended graphene on GaN nanopillars

Abstract

Bibliographical note

ASJC Scopus subject areas

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