Abstract
We demonstrated a way to fabricate the crystalline Ba0.6Sr 0.4TiO3 (BST) thin films using excimer laser annealing technique on the amorphous BST thin films fabricated by sol-gel process. The grain size of the laser-annealed films is larger than that of the conventionally thermal-annealed films. However, an uncrystallized, amorphous layer was observed near the film/substrate interface due to the limited laser absorption depth. The uncrystallized layer has a critical influence on out-of-plane dielectric property of BST films. The significant difference of the relative dielectric permittivity (εr) between in-plane (1383) and out-of-plane (184) directions is observed.
Original language | English |
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Article number | 242910 |
Journal | Applied Physics Letters |
Volume | 101 |
Issue number | 24 |
DOIs | |
Publication status | Published - 2012 Dec 10 |
Bibliographical note
Funding Information:This research was supported by the Fundamental R&D Program for Core Technology of Materials funded by the Ministry of Knowledge Economy, the Base Convergent Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology, and the institutional research program of Korea Institute of Science and Technology (contract No. 2E22731).
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)