Large Magnetoconductance in GaAs Induced by Impact Ionization

Taeyueb Kim; Sungjung Joo; Hyun Cheol Koo; Jinki Hong

doi:10.3938/jkps.75.1017

Large Magnetoconductance in GaAs Induced by Impact Ionization

Taeyueb Kim, Sungjung Joo, Hyun Cheol Koo, Jinki Hong

KU-KIST Graduate School of Converging Science and Technology

Research output: Contribution to journal › Article › peer-review

Abstract

We have investigated this magneto-switching behavior in GaAs structure. Exposing these devices to a small magnetic field (< 0.5 Tesla) induced a change in conductance that was above 100,000% at 10 K and up to 1,000% at 300 K. We also observed a variety of transport mechanisms in a single device that were clearly distinguished according to the bias voltage and their characteristic magnetoconductance can be specified. This work represents important progress in understanding the physics of the magneto-switching function and achieving large ON/OFF ratios.

Original language	English
Pages (from-to)	1017-1020
Number of pages	4
Journal	Journal of the Korean Physical Society
Volume	75
Issue number	12
DOIs	https://doi.org/10.3938/jkps.75.1017
Publication status	Published - 2019 Dec 1

Keywords

Avalanche effect
GaAs
Impact ionization
Magnetoresistance
Space-charge effect

ASJC Scopus subject areas

Physics and Astronomy(all)

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10.3938/jkps.75.1017

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title = "Large Magnetoconductance in GaAs Induced by Impact Ionization",

abstract = "We have investigated this magneto-switching behavior in GaAs structure. Exposing these devices to a small magnetic field (< 0.5 Tesla) induced a change in conductance that was above 100,000% at 10 K and up to 1,000% at 300 K. We also observed a variety of transport mechanisms in a single device that were clearly distinguished according to the bias voltage and their characteristic magnetoconductance can be specified. This work represents important progress in understanding the physics of the magneto-switching function and achieving large ON/OFF ratios.",

keywords = "Avalanche effect, GaAs, Impact ionization, Magnetoresistance, Space-charge effect",

author = "Taeyueb Kim and Sungjung Joo and Koo, {Hyun Cheol} and Jinki Hong",

note = "Funding Information: This research was supported by “Enhancement of Measurement and Standards Technologies in Physical SI Units” funded by the Korea Research Institute of Standards and Science (KRISS-2019-GP2019-0001) and Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education (NRF-2017R1D1A1A02018517). Publisher Copyright: {\textcopyright} 2019, The Korean Physical Society.",

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doi = "10.3938/jkps.75.1017",

language = "English",

volume = "75",

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journal = "Journal of the Korean Physical Society",

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AU - Kim, Taeyueb

AU - Joo, Sungjung

AU - Koo, Hyun Cheol

AU - Hong, Jinki

N1 - Funding Information: This research was supported by “Enhancement of Measurement and Standards Technologies in Physical SI Units” funded by the Korea Research Institute of Standards and Science (KRISS-2019-GP2019-0001) and Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education (NRF-2017R1D1A1A02018517). Publisher Copyright: © 2019, The Korean Physical Society.

PY - 2019/12/1

Y1 - 2019/12/1

N2 - We have investigated this magneto-switching behavior in GaAs structure. Exposing these devices to a small magnetic field (< 0.5 Tesla) induced a change in conductance that was above 100,000% at 10 K and up to 1,000% at 300 K. We also observed a variety of transport mechanisms in a single device that were clearly distinguished according to the bias voltage and their characteristic magnetoconductance can be specified. This work represents important progress in understanding the physics of the magneto-switching function and achieving large ON/OFF ratios.

AB - We have investigated this magneto-switching behavior in GaAs structure. Exposing these devices to a small magnetic field (< 0.5 Tesla) induced a change in conductance that was above 100,000% at 10 K and up to 1,000% at 300 K. We also observed a variety of transport mechanisms in a single device that were clearly distinguished according to the bias voltage and their characteristic magnetoconductance can be specified. This work represents important progress in understanding the physics of the magneto-switching function and achieving large ON/OFF ratios.

KW - Avalanche effect

KW - GaAs

KW - Impact ionization

KW - Magnetoresistance

KW - Space-charge effect

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JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

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ER -

Large Magnetoconductance in GaAs Induced by Impact Ionization

Abstract

Keywords

ASJC Scopus subject areas

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