Large Magnetoconductance in GaAs Induced by Impact Ionization

Taeyueb Kim; Sungjung Joo; Hyun Cheol Koo; Jinki Hong

doi:10.3938/jkps.75.1017

Large Magnetoconductance in GaAs Induced by Impact Ionization

Taeyueb Kim, Sungjung Joo, Hyun Cheol Koo, Jinki Hong

Research output: Contribution to journal › Article › peer-review

Abstract

We have investigated this magneto-switching behavior in GaAs structure. Exposing these devices to a small magnetic field (< 0.5 Tesla) induced a change in conductance that was above 100,000% at 10 K and up to 1,000% at 300 K. We also observed a variety of transport mechanisms in a single device that were clearly distinguished according to the bias voltage and their characteristic magnetoconductance can be specified. This work represents important progress in understanding the physics of the magneto-switching function and achieving large ON/OFF ratios.

Original language	English
Pages (from-to)	1017-1020
Number of pages	4
Journal	Journal of the Korean Physical Society
Volume	75
Issue number	12
DOIs	https://doi.org/10.3938/jkps.75.1017
Publication status	Published - 2019 Dec 1

Bibliographical note

Publisher Copyright:
© 2019, The Korean Physical Society.

Keywords

Avalanche effect
GaAs
Impact ionization
Magnetoresistance
Space-charge effect

ASJC Scopus subject areas

General Physics and Astronomy

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10.3938/jkps.75.1017

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abstract = "We have investigated this magneto-switching behavior in GaAs structure. Exposing these devices to a small magnetic field (< 0.5 Tesla) induced a change in conductance that was above 100,000% at 10 K and up to 1,000% at 300 K. We also observed a variety of transport mechanisms in a single device that were clearly distinguished according to the bias voltage and their characteristic magnetoconductance can be specified. This work represents important progress in understanding the physics of the magneto-switching function and achieving large ON/OFF ratios.",

keywords = "Avalanche effect, GaAs, Impact ionization, Magnetoresistance, Space-charge effect",

author = "Taeyueb Kim and Sungjung Joo and Koo, {Hyun Cheol} and Jinki Hong",

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AU - Joo, Sungjung

AU - Koo, Hyun Cheol

AU - Hong, Jinki

PY - 2019/12/1

Y1 - 2019/12/1

N2 - We have investigated this magneto-switching behavior in GaAs structure. Exposing these devices to a small magnetic field (< 0.5 Tesla) induced a change in conductance that was above 100,000% at 10 K and up to 1,000% at 300 K. We also observed a variety of transport mechanisms in a single device that were clearly distinguished according to the bias voltage and their characteristic magnetoconductance can be specified. This work represents important progress in understanding the physics of the magneto-switching function and achieving large ON/OFF ratios.

AB - We have investigated this magneto-switching behavior in GaAs structure. Exposing these devices to a small magnetic field (< 0.5 Tesla) induced a change in conductance that was above 100,000% at 10 K and up to 1,000% at 300 K. We also observed a variety of transport mechanisms in a single device that were clearly distinguished according to the bias voltage and their characteristic magnetoconductance can be specified. This work represents important progress in understanding the physics of the magneto-switching function and achieving large ON/OFF ratios.

KW - Avalanche effect

KW - GaAs

KW - Impact ionization

KW - Magnetoresistance

KW - Space-charge effect

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JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

IS - 12

ER -

Large Magnetoconductance in GaAs Induced by Impact Ionization

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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