Large Magnetoconductance in GaAs Induced by Impact Ionization

Taeyueb Kim, Sungjung Joo, Hyun Cheol Koo, Jinki Hong

Research output: Contribution to journalArticlepeer-review


We have investigated this magneto-switching behavior in GaAs structure. Exposing these devices to a small magnetic field (< 0.5 Tesla) induced a change in conductance that was above 100,000% at 10 K and up to 1,000% at 300 K. We also observed a variety of transport mechanisms in a single device that were clearly distinguished according to the bias voltage and their characteristic magnetoconductance can be specified. This work represents important progress in understanding the physics of the magneto-switching function and achieving large ON/OFF ratios.

Original languageEnglish
Pages (from-to)1017-1020
Number of pages4
JournalJournal of the Korean Physical Society
Issue number12
Publication statusPublished - 2019 Dec 1


  • Avalanche effect
  • GaAs
  • Impact ionization
  • Magnetoresistance
  • Space-charge effect

ASJC Scopus subject areas

  • Physics and Astronomy(all)


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