Abstract
We have investigated this magneto-switching behavior in GaAs structure. Exposing these devices to a small magnetic field (< 0.5 Tesla) induced a change in conductance that was above 100,000% at 10 K and up to 1,000% at 300 K. We also observed a variety of transport mechanisms in a single device that were clearly distinguished according to the bias voltage and their characteristic magnetoconductance can be specified. This work represents important progress in understanding the physics of the magneto-switching function and achieving large ON/OFF ratios.
Original language | English |
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Pages (from-to) | 1017-1020 |
Number of pages | 4 |
Journal | Journal of the Korean Physical Society |
Volume | 75 |
Issue number | 12 |
DOIs | |
Publication status | Published - 2019 Dec 1 |
Bibliographical note
Publisher Copyright:© 2019, The Korean Physical Society.
Keywords
- Avalanche effect
- GaAs
- Impact ionization
- Magnetoresistance
- Space-charge effect
ASJC Scopus subject areas
- General Physics and Astronomy