Large Magnetoconductance in GaAs Induced by Impact Ionization

Taeyueb Kim, Sungjung Joo, Hyun Cheol Koo, Jinki Hong

    Research output: Contribution to journalArticlepeer-review

    Abstract

    We have investigated this magneto-switching behavior in GaAs structure. Exposing these devices to a small magnetic field (< 0.5 Tesla) induced a change in conductance that was above 100,000% at 10 K and up to 1,000% at 300 K. We also observed a variety of transport mechanisms in a single device that were clearly distinguished according to the bias voltage and their characteristic magnetoconductance can be specified. This work represents important progress in understanding the physics of the magneto-switching function and achieving large ON/OFF ratios.

    Original languageEnglish
    Pages (from-to)1017-1020
    Number of pages4
    JournalJournal of the Korean Physical Society
    Volume75
    Issue number12
    DOIs
    Publication statusPublished - 2019 Dec 1

    Bibliographical note

    Publisher Copyright:
    © 2019, The Korean Physical Society.

    Keywords

    • Avalanche effect
    • GaAs
    • Impact ionization
    • Magnetoresistance
    • Space-charge effect

    ASJC Scopus subject areas

    • General Physics and Astronomy

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