Abstract
We have obtained large positive and negative magnetoresistance in a square-shaped InAs two-dimensional electron gas in which the magnetoresistance is controlled by the magnetization of a ferromagnetic gate on the surface of the device. From an analysis based on a numerical calculation, the mechanism of this effect can be understood in terms of a spatially varying Hall conductivity and a geometrical effect of the device. This device has several practical advantages over the device with extraordinary magnetoresistance reported by Solin et al.
| Original language | English |
|---|---|
| Pages (from-to) | 354-358 |
| Number of pages | 5 |
| Journal | Journal of the Korean Physical Society |
| Volume | 47 |
| Issue number | 2 |
| Publication status | Published - 2005 Aug |
Keywords
- 2DEG
- Hall angle
- InAs
- Magnetic sensor
- Magnetoresistance
ASJC Scopus subject areas
- General Physics and Astronomy