Large magnetoresistance in square-shaped hybrid magnet-semiconductor device

Jinki Hong, Kungwon Rhie, Kyung Ho Shin, K. H. Kim, S. U. Kim, B. C. Lee

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)


We have obtained large positive and negative magnetoresistance in a square-shaped InAs two-dimensional electron gas in which the magnetoresistance is controlled by the magnetization of a ferromagnetic gate on the surface of the device. From an analysis based on a numerical calculation, the mechanism of this effect can be understood in terms of a spatially varying Hall conductivity and a geometrical effect of the device. This device has several practical advantages over the device with extraordinary magnetoresistance reported by Solin et al.

Original languageEnglish
Pages (from-to)354-358
Number of pages5
JournalJournal of the Korean Physical Society
Issue number2
Publication statusPublished - 2005 Aug


  • 2DEG
  • Hall angle
  • InAs
  • Magnetic sensor
  • Magnetoresistance

ASJC Scopus subject areas

  • General Physics and Astronomy


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