Large reduction in switching current driven by spin-orbit torque in W/CoFeB heterostructures with W–N interfacial layers

Yong Jin Kim, Min Hyeok Lee, Gyu Won Kim, Taehyun Kim, In Ho Cha, Quynh Anh T. Nguyen, Sonny H. Rhim, Young Keun Kim

    Research output: Contribution to journalArticlepeer-review

    14 Citations (Scopus)

    Abstract

    Injecting an electrical current into a nonmagnetic layer toward the in-plane direction can reverse the magnetization direction of an adjacent ferromagnetic layer in a nonmagnet/ferromagnet heterostructure via spin-orbit torque (SOT). One of the most critical issues for memory and logic device applications is to reduce the critical current to assure low energy consumption. Herein, we report both enhanced SOT efficiency and reduced SOT-induced switching current in perpendicularly magnetized W/CoFeB heterostructures, where ultrathin tungsten nitride (W–N) layers with various N-compositions and thicknesses are placed in between W and CoFeB layers. The composition of the W–N layers affects the microstructure and, therefore, the electrical properties. The measured SOT efficiency is 0.54, and the switching current reduces to approximately one-fifth of its original value in the 0.2-nm-thick W–N layer sample containing 42 at% N. Our results suggest interface engineering is a practical approach to reduce switching current.

    Original languageEnglish
    Pages (from-to)551-558
    Number of pages8
    JournalActa Materialia
    Volume200
    DOIs
    Publication statusPublished - 2020 Nov

    Bibliographical note

    Publisher Copyright:
    © 2020

    Keywords

    • Interface
    • Microstructure
    • Spin-orbit torque
    • Switching current
    • W–N layer

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Ceramics and Composites
    • Polymers and Plastics
    • Metals and Alloys

    Fingerprint

    Dive into the research topics of 'Large reduction in switching current driven by spin-orbit torque in W/CoFeB heterostructures with W–N interfacial layers'. Together they form a unique fingerprint.

    Cite this