Abstract
We report on a method for the large-scale production of graphene micropatterns by a self-assembly mediated process. The evaporation-induced self-assembly technique was engineered to produce highly ordered graphene patterns on flexible substrates in a simplified and scalable manner. The crossed stripe graphene patterns have been produced over a large area with regions consisting of single- and two-layer graphene. Based on these graphene patterns, flexible graphene-based field effect transistors have been fabricated with an ion-gel gate dielectric, which operates at low voltages of < 2 V with a hole and electron mobility of 214 and 106 cm 2/V·s, respectively. The self-assembly approach described here may pave the way for the nonlithographic production of graphene patterns, which is scalable to large areas and compatible with roll-to-roll system.
Original language | English |
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Pages (from-to) | 743-748 |
Number of pages | 6 |
Journal | Nano Letters |
Volume | 12 |
Issue number | 2 |
DOIs | |
Publication status | Published - 2012 Feb 8 |
Keywords
- Graphene
- field effect transistor
- flexible electronics
- large-area
- patterning
- self-assembly
ASJC Scopus subject areas
- Bioengineering
- Chemistry(all)
- Materials Science(all)
- Condensed Matter Physics
- Mechanical Engineering