Laser ablation of via holes in GaN and AlGaN/GaN high electron mobility transistor structures

Travis Anderson; Fan Ren; Stephen J. Pearton; Michael A. Mastro; Ron T. Holm; Rich L. Henry; Charles R. Eddy; Joon Yeob Lee; Kwan Young Lee; Jihyun Kim

doi:10.1116/1.2335435

Laser ablation of via holes in GaN and AlGaN/GaN high electron mobility transistor structures

Travis Anderson^*
, Fan Ren
, Stephen J. Pearton
, Michael A. Mastro
, Ron T. Holm
, Rich L. Henry
, Charles R. Eddy
, Joon Yeob Lee
, Kwan Young Lee
, Jihyun Kim

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

18 Citations (Scopus)

Abstract

Laser drilling for through-via holes was performed with a Nd: YVO ₄ laser for an AlGaN/GaN high electron mobility transistor (HEMT) structure on a SiC substrate. Current-voltage (I-V) characteristics, transconductance, and small signal characteristics before and after laser drilling were compared to examine the effect of laser drilling on device performance. The electrical characteristics of the HEMTs did not show significant change after laser drilling, even when performed in close proximity to the device. Laser drilling was found to be a fast and safe technique to drill via hole in AlGaN/GaN HEMT structure and provides an alternative to dry etching for creation of these vias.

Original language	English
Pages (from-to)	2246-2249
Number of pages	4
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	24
Issue number	5
DOIs	https://doi.org/10.1116/1.2335435
Publication status	Published - 2006

Bibliographical note

Funding Information:
Research at Korea University was supported by the Korea University Grant Fund and the Applied Rheology Center (ARC). Research at the Naval Research Laboratory is supported by the Office of Naval Research; support for one of the authors (M.A.M.) was partially provided by the American Society for Engineering Education. The work at UF is partially funded by the Air Force Research Laboratory under Contract No. FA 8650-04-2-1619, monitored by T. Dalrymple. JK thanks for BK 21 Program in 2006.

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

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@article{4661a2af5d934ed8ae919d70cba7e72c,

title = "Laser ablation of via holes in GaN and AlGaN/GaN high electron mobility transistor structures",

abstract = "Laser drilling for through-via holes was performed with a Nd: YVO 4 laser for an AlGaN/GaN high electron mobility transistor (HEMT) structure on a SiC substrate. Current-voltage (I-V) characteristics, transconductance, and small signal characteristics before and after laser drilling were compared to examine the effect of laser drilling on device performance. The electrical characteristics of the HEMTs did not show significant change after laser drilling, even when performed in close proximity to the device. Laser drilling was found to be a fast and safe technique to drill via hole in AlGaN/GaN HEMT structure and provides an alternative to dry etching for creation of these vias.",

author = "Travis Anderson and Fan Ren and Pearton, \{Stephen J.\} and Mastro, \{Michael A.\} and Holm, \{Ron T.\} and Henry, \{Rich L.\} and Eddy, \{Charles R.\} and Lee, \{Joon Yeob\} and Lee, \{Kwan Young\} and Jihyun Kim",

note = "Funding Information: Research at Korea University was supported by the Korea University Grant Fund and the Applied Rheology Center (ARC). Research at the Naval Research Laboratory is supported by the Office of Naval Research; support for one of the authors (M.A.M.) was partially provided by the American Society for Engineering Education. The work at UF is partially funded by the Air Force Research Laboratory under Contract No. FA 8650-04-2-1619, monitored by T. Dalrymple. JK thanks for BK 21 Program in 2006.",

year = "2006",

doi = "10.1116/1.2335435",

language = "English",

volume = "24",

pages = "2246--2249",

journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

issn = "1071-1023",

publisher = "AVS Science and Technology Society",

number = "5",

}

TY - JOUR

T1 - Laser ablation of via holes in GaN and AlGaN/GaN high electron mobility transistor structures

AU - Anderson, Travis

AU - Ren, Fan

AU - Pearton, Stephen J.

AU - Mastro, Michael A.

AU - Holm, Ron T.

AU - Henry, Rich L.

AU - Eddy, Charles R.

AU - Lee, Joon Yeob

AU - Lee, Kwan Young

AU - Kim, Jihyun

N1 - Funding Information: Research at Korea University was supported by the Korea University Grant Fund and the Applied Rheology Center (ARC). Research at the Naval Research Laboratory is supported by the Office of Naval Research; support for one of the authors (M.A.M.) was partially provided by the American Society for Engineering Education. The work at UF is partially funded by the Air Force Research Laboratory under Contract No. FA 8650-04-2-1619, monitored by T. Dalrymple. JK thanks for BK 21 Program in 2006.

PY - 2006

Y1 - 2006

N2 - Laser drilling for through-via holes was performed with a Nd: YVO 4 laser for an AlGaN/GaN high electron mobility transistor (HEMT) structure on a SiC substrate. Current-voltage (I-V) characteristics, transconductance, and small signal characteristics before and after laser drilling were compared to examine the effect of laser drilling on device performance. The electrical characteristics of the HEMTs did not show significant change after laser drilling, even when performed in close proximity to the device. Laser drilling was found to be a fast and safe technique to drill via hole in AlGaN/GaN HEMT structure and provides an alternative to dry etching for creation of these vias.

AB - Laser drilling for through-via holes was performed with a Nd: YVO 4 laser for an AlGaN/GaN high electron mobility transistor (HEMT) structure on a SiC substrate. Current-voltage (I-V) characteristics, transconductance, and small signal characteristics before and after laser drilling were compared to examine the effect of laser drilling on device performance. The electrical characteristics of the HEMTs did not show significant change after laser drilling, even when performed in close proximity to the device. Laser drilling was found to be a fast and safe technique to drill via hole in AlGaN/GaN HEMT structure and provides an alternative to dry etching for creation of these vias.

UR - https://www.scopus.com/pages/publications/33749317916

U2 - 10.1116/1.2335435

DO - 10.1116/1.2335435

M3 - Article

AN - SCOPUS:33749317916

SN - 1071-1023

VL - 24

SP - 2246

EP - 2249

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

IS - 5

ER -

Laser ablation of via holes in GaN and AlGaN/GaN high electron mobility transistor structures

Abstract

Bibliographical note

ASJC Scopus subject areas

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