We developed a novel cost effective process scheme for the fabrication of highly efficient selective emitter solar cells, which uses a laser doping method combined with an etch back process. The laser doping process using a 150. ns pulse width green (532. nm) laser effectively controls the doping profiles to form a selective emitter. However, laser damage was created on the laser-doped surface and eventually the performances and stabilities of laser-doped cells were degraded due to this damage. Using a transmission electron microscope (TEM), the damage was examined and found to have a thickness of 40. nm of amorphous silicon. This thin damage layer was effectively removed in an acid mixture solution. The combined process of laser doping and etch back is called the laser etch back process. After removal of this thin damage layer, the cell efficiencies were significantly improved up to 19.17%.
Bibliographical noteFunding Information:
This work was supported by the “ National Research Foundation of Korea Grant funded by the Korean Government (MSIP)” (2014, University-Institute cooperation program); by World Class 300 Project R&D (No. 10043264) of the Korea Evaluation Institute of Industrial Technology (KEIT) grant funded by the Korea government Ministry of Trade, Industry and Energy .
- Etch back
- High efficiency
- Laser doping
- Selective emitter
ASJC Scopus subject areas
- Renewable Energy, Sustainability and the Environment
- General Materials Science