@inproceedings{5ced64abd4264a8a81d7d115b0673d93,
title = "Lasing characteristics of 1.3 μm atomic layer epitaxy quamtum dot laser diode",
abstract = "We demonstrated the room temperature lasing of GaAs-based 1.3 μm quantum-dot laser diode (QDLD) grown by atomic layer epitaxy (ALE). The active region of a QDLD consists of 3-stacked InAs quantum-dots (QDs) in an In 0.15Ga0.85As quantum well (dots-in-a-well: DWELL), which was grown by molecular beam epitaxy (MBE). For advanced performances of QDLD, the high-growth-temperature spacer layer and p-type modulation doping were applied to QDLD active region. We fabricated ridge waveguide structure LDs which had 10-50 μm ridge width with several cavity lengths and applied a high reflection (HR) coating on one-sided mirror facet. The threshold current density was 95 A/cm2 under a pulsed operation and 247 A/cm2 under a CW operation, respectively. The lasing wavelength was 1.31 μm under a pulsed operation condition and 1.32 μm under a CW operation at room temperature. The QDLD showed a simultaneous lasing and a state switching to the higher-order state. The lasing wavelength switching from the ground state to the excited state depends on the cavity length, the injection current and operating temperature.",
keywords = "Al GaAs cladding layer, HGTSL, InAs/GaAs quantum dot, Laser diode, Simultaneous lasing",
author = "Kim, {Kwang Woong} and Cho, {Nam Ki} and Song, {Jin Dong} and Choi, {Won Jun} and Lee, {Jung Il} and Park, {Jung Ho}",
year = "2006",
doi = "10.1117/12.691596",
language = "English",
isbn = "0819464473",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
booktitle = "Optoelectronic Materials and Devices",
note = "Optoelectronic Materials and Devices ; Conference date: 05-09-2006 Through 07-09-2006",
}