Lasing characteristics of GaAs/AlGaAs quantum wire laser and its array with an effective p-n junction current blocking layer

Tae Geun Kim; Eun Kyu Kim; Chang Sik Son; Seong Il Kim; Jichai Jeong; Suk Ki Min; Si Jong Leem; Jong Il Jun; Hae Wang Lee; Jung Ho Park; Tae Yeon Seong; Sung Won Jun

Lasing characteristics of GaAs/AlGaAs quantum wire laser and its array with an effective p-n junction current blocking layer

Tae Geun Kim, Eun Kyu Kim, Chang Sik Son, Seong Il Kim, Jichai Jeong, Suk Ki Min, Si Jong Leem, Jong Il Jun, Hae Wang Lee, Jung Ho Park, Tae Yeon Seong, Sung Won Jun

Research output: Contribution to journal › Conference article › peer-review

Abstract

Semiconductor quantum wire (QWR) diode lasers incorporating a p-n junction blocking layer between buffer layers instead of proton implantation is reported. A schematic diagram of the proposed laser structure is presented. A n-GaAs buffer and a 2-μm-thick p-GaAs layer for current blocking were grown on (100) GaAs substrates. The structure and optical properties of the QWR were investigated using transmission electron microscopy and low temperature photoluminescence (PL). An output power of 11.8 mW from some quantum wire laser array (QWLA) was observed, as well as threshold currents as low as 228 mA. The differential quantum efficiency for the devices with high power output exceeded 20% and the lasing wavelength was 826 nm.

Original language	English
Pages (from-to)	326-327
Number of pages	2
Journal	Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
Volume	1
Publication status	Published - 1996
Event	Proceedings of the 1996 9th Annual Meeting of IEEE Lasers and Electro-Optics Society, LEOS'96. Part 1 (of 2) - Boston, MA, USA Duration: 1996 Nov 18 → 1996 Nov 19

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Cite this

Kim, T. G., Kim, E. K., Son, C. S., Kim, S. I., Jeong, J., Min, S. K., Leem, S. J., Jun, J. I., Lee, H. W., Park, J. H., Seong, T. Y., & Jun, S. W. (1996). Lasing characteristics of GaAs/AlGaAs quantum wire laser and its array with an effective p-n junction current blocking layer. Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS, 1, 326-327.

@article{0b6120917d1749ea9acd5ad9de2bd2bd,

title = "Lasing characteristics of GaAs/AlGaAs quantum wire laser and its array with an effective p-n junction current blocking layer",

abstract = "Semiconductor quantum wire (QWR) diode lasers incorporating a p-n junction blocking layer between buffer layers instead of proton implantation is reported. A schematic diagram of the proposed laser structure is presented. A n-GaAs buffer and a 2-μm-thick p-GaAs layer for current blocking were grown on (100) GaAs substrates. The structure and optical properties of the QWR were investigated using transmission electron microscopy and low temperature photoluminescence (PL). An output power of 11.8 mW from some quantum wire laser array (QWLA) was observed, as well as threshold currents as low as 228 mA. The differential quantum efficiency for the devices with high power output exceeded 20% and the lasing wavelength was 826 nm.",

author = "Kim, {Tae Geun} and Kim, {Eun Kyu} and Son, {Chang Sik} and Kim, {Seong Il} and Jichai Jeong and Min, {Suk Ki} and Leem, {Si Jong} and Jun, {Jong Il} and Lee, {Hae Wang} and Park, {Jung Ho} and Seong, {Tae Yeon} and Jun, {Sung Won}",

year = "1996",

language = "English",

volume = "1",

pages = "326--327",

journal = "Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS",

issn = "1092-8081",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "Proceedings of the 1996 9th Annual Meeting of IEEE Lasers and Electro-Optics Society, LEOS'96. Part 1 (of 2) ; Conference date: 18-11-1996 Through 19-11-1996",

}

TY - JOUR

T1 - Lasing characteristics of GaAs/AlGaAs quantum wire laser and its array with an effective p-n junction current blocking layer

AU - Kim, Tae Geun

AU - Kim, Eun Kyu

AU - Son, Chang Sik

AU - Kim, Seong Il

AU - Jeong, Jichai

AU - Min, Suk Ki

AU - Leem, Si Jong

AU - Jun, Jong Il

AU - Lee, Hae Wang

AU - Park, Jung Ho

AU - Seong, Tae Yeon

AU - Jun, Sung Won

PY - 1996

Y1 - 1996

N2 - Semiconductor quantum wire (QWR) diode lasers incorporating a p-n junction blocking layer between buffer layers instead of proton implantation is reported. A schematic diagram of the proposed laser structure is presented. A n-GaAs buffer and a 2-μm-thick p-GaAs layer for current blocking were grown on (100) GaAs substrates. The structure and optical properties of the QWR were investigated using transmission electron microscopy and low temperature photoluminescence (PL). An output power of 11.8 mW from some quantum wire laser array (QWLA) was observed, as well as threshold currents as low as 228 mA. The differential quantum efficiency for the devices with high power output exceeded 20% and the lasing wavelength was 826 nm.

AB - Semiconductor quantum wire (QWR) diode lasers incorporating a p-n junction blocking layer between buffer layers instead of proton implantation is reported. A schematic diagram of the proposed laser structure is presented. A n-GaAs buffer and a 2-μm-thick p-GaAs layer for current blocking were grown on (100) GaAs substrates. The structure and optical properties of the QWR were investigated using transmission electron microscopy and low temperature photoluminescence (PL). An output power of 11.8 mW from some quantum wire laser array (QWLA) was observed, as well as threshold currents as low as 228 mA. The differential quantum efficiency for the devices with high power output exceeded 20% and the lasing wavelength was 826 nm.

UR - http://www.scopus.com/inward/record.url?scp=0030380464&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0030380464

SN - 1092-8081

VL - 1

SP - 326

EP - 327

JO - Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS

JF - Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS

T2 - Proceedings of the 1996 9th Annual Meeting of IEEE Lasers and Electro-Optics Society, LEOS'96. Part 1 (of 2)

Y2 - 18 November 1996 through 19 November 1996

ER -

Lasing characteristics of GaAs/AlGaAs quantum wire laser and its array with an effective p-n junction current blocking layer

Abstract

ASJC Scopus subject areas

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