Lateral conduction mid-infrared photodetectors using self-assembled Ge/Si quantum dots

S. W. Lee; T. G. Kim; K. Hirakawa; J. S. Kim; H. Y. Cho

doi:10.1109/NMDC.2006.4388883

Lateral conduction mid-infrared photodetectors using self-assembled Ge/Si quantum dots

S. W. Lee, T. G. Kim, K. Hirakawa, J. S. Kim, H. Y. Cho

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

We have investigated a lateral conduction midinfrared photodetectors by using photoionization of holes in the self-assembled Ge/Si quantum dots. A broad mid-infrared photocurrent spectrum was observed in photon energy range of 120-400 meV due to intersubband transition in the valence band of self-assembled Ge quantum dots. The peak responsivity was 134 mA/W at photon energy range of 240 meV at T=10 K.

Original language	English
Title of host publication	2006 IEEE Nanotechnology Materials and Devices Conference, NMDC
Pages	520-521
Number of pages	2
DOIs	https://doi.org/10.1109/NMDC.2006.4388883
Publication status	Published - 2006
Event	2006 IEEE Nanotechnology Materials and Devices Conference, NMDC - Gyeongju, Korea, Republic of Duration: 2006 Oct 22 → 2006 Oct 25

Publication series

Name	2006 IEEE Nanotechnology Materials and Devices Conference, NMDC
Volume	1

Other

Other	2006 IEEE Nanotechnology Materials and Devices Conference, NMDC
Country/Territory	Korea, Republic of
City	Gyeongju
Period	06/10/22 → 06/10/25

Keywords

Ge quantum dot
Infrared photodetector
Photocurrent

ASJC Scopus subject areas

Electrical and Electronic Engineering
General Materials Science

Access to Document

10.1109/NMDC.2006.4388883

Cite this

Lee, S. W., Kim, T. G., Hirakawa, K., Kim, J. S., & Cho, H. Y. (2006). Lateral conduction mid-infrared photodetectors using self-assembled Ge/Si quantum dots. In 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC (pp. 520-521). Article 4388883 (2006 IEEE Nanotechnology Materials and Devices Conference, NMDC; Vol. 1). https://doi.org/10.1109/NMDC.2006.4388883

Lateral conduction mid-infrared photodetectors using self-assembled Ge/Si quantum dots. / Lee, S. W.; Kim, T. G.; Hirakawa, K. et al.
2006 IEEE Nanotechnology Materials and Devices Conference, NMDC. 2006. p. 520-521 4388883 (2006 IEEE Nanotechnology Materials and Devices Conference, NMDC; Vol. 1).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Lee, SW, Kim, TG, Hirakawa, K, Kim, JS & Cho, HY 2006, Lateral conduction mid-infrared photodetectors using self-assembled Ge/Si quantum dots. in 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC., 4388883, 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC, vol. 1, pp. 520-521, 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC, Gyeongju, Korea, Republic of, 06/10/22. https://doi.org/10.1109/NMDC.2006.4388883

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abstract = "We have investigated a lateral conduction midinfrared photodetectors by using photoionization of holes in the self-assembled Ge/Si quantum dots. A broad mid-infrared photocurrent spectrum was observed in photon energy range of 120-400 meV due to intersubband transition in the valence band of self-assembled Ge quantum dots. The peak responsivity was 134 mA/W at photon energy range of 240 meV at T=10 K.",

keywords = "Ge quantum dot, Infrared photodetector, Photocurrent",

author = "Lee, {S. W.} and Kim, {T. G.} and K. Hirakawa and Kim, {J. S.} and Cho, {H. Y.}",

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AB - We have investigated a lateral conduction midinfrared photodetectors by using photoionization of holes in the self-assembled Ge/Si quantum dots. A broad mid-infrared photocurrent spectrum was observed in photon energy range of 120-400 meV due to intersubband transition in the valence band of self-assembled Ge quantum dots. The peak responsivity was 134 mA/W at photon energy range of 240 meV at T=10 K.

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Y2 - 22 October 2006 through 25 October 2006

ER -

Lateral conduction mid-infrared photodetectors using self-assembled Ge/Si quantum dots

Abstract

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Keywords

ASJC Scopus subject areas

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