Lateral schottky GaN rectifiers formed by Si+ ion implantation

Y. Irokawa; Jihyun Kim; F. Ren; K. H. Baik; B. P. Gila; C. R. Abernathy; S. J. Pearton; C. C. Pan; G. T. Chen; J. I. Chyi

doi:10.1007/s11664-004-0196-5

Lateral schottky GaN rectifiers formed by Si⁺ ion implantation

Y. Irokawa, Jihyun Kim, F. Ren, K. H. Baik, B. P. Gila, C. R. Abernathy, S. J. Pearton, C. C. Pan, G. T. Chen, J. I. Chyi

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

Type conversion of p-GaN by direct Si⁺ ion implantation and subsequent annealing was demonstrated by the fabrication of lateral Schottky diodes. The Si⁺ activation percentage was measured as a function of annealing time (30-300 sec) and temperature (1,000-1,200°C), reaching a maximum of ∼30% for 1,200°C, 2-min anneals. The resulting n-type carrier concentration was 1.1 × 10¹⁸ cm^-3 for a moderate Si⁺ ion dose of ∼2 × 10¹⁴ cm^-2. The lateral Schottky diodes displayed a negative temperature coefficient of -0.15 V·K for reverse breakdown voltage.

Original language	English
Pages (from-to)	426-430
Number of pages	5
Journal	Journal of Electronic Materials
Volume	33
Issue number	5
DOIs	https://doi.org/10.1007/s11664-004-0196-5
Publication status	Published - 2004 May
Externally published	Yes

Keywords

GaN
Ion implantation
Lateral schottky diodes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1007/s11664-004-0196-5

Cite this

@article{19821de90b7344e2876eb1bad5bc1866,

title = "Lateral schottky GaN rectifiers formed by Si+ ion implantation",

abstract = "Type conversion of p-GaN by direct Si+ ion implantation and subsequent annealing was demonstrated by the fabrication of lateral Schottky diodes. The Si+ activation percentage was measured as a function of annealing time (30-300 sec) and temperature (1,000-1,200°C), reaching a maximum of ∼30% for 1,200°C, 2-min anneals. The resulting n-type carrier concentration was 1.1 × 1018 cm-3 for a moderate Si+ ion dose of ∼2 × 1014 cm-2. The lateral Schottky diodes displayed a negative temperature coefficient of -0.15 V·K for reverse breakdown voltage.",

keywords = "GaN, Ion implantation, Lateral schottky diodes",

author = "Y. Irokawa and Jihyun Kim and F. Ren and Baik, {K. H.} and Gila, {B. P.} and Abernathy, {C. R.} and Pearton, {S. J.} and Pan, {C. C.} and Chen, {G. T.} and Chyi, {J. I.}",

note = "Funding Information: The work at the University of Florida is partially supported by EPRI and NSF. The work at the National Central University is partially supported by the Ministry of Education of the Republic of China under the Program for Promoting Academic Excellence of Universities (Grant No. 890E-FA06-1-4) and the National Science Council of the Republic of China (Grant No. NSC89-2215-E-008-031).",

year = "2004",

month = may,

doi = "10.1007/s11664-004-0196-5",

language = "English",

volume = "33",

pages = "426--430",

journal = "Journal of Electronic Materials",

issn = "0361-5235",

publisher = "Springer New York",

number = "5",

}

TY - JOUR

T1 - Lateral schottky GaN rectifiers formed by Si+ ion implantation

AU - Irokawa, Y.

AU - Kim, Jihyun

AU - Ren, F.

AU - Baik, K. H.

AU - Gila, B. P.

AU - Abernathy, C. R.

AU - Pearton, S. J.

AU - Pan, C. C.

AU - Chen, G. T.

AU - Chyi, J. I.

N1 - Funding Information: The work at the University of Florida is partially supported by EPRI and NSF. The work at the National Central University is partially supported by the Ministry of Education of the Republic of China under the Program for Promoting Academic Excellence of Universities (Grant No. 890E-FA06-1-4) and the National Science Council of the Republic of China (Grant No. NSC89-2215-E-008-031).

PY - 2004/5

Y1 - 2004/5

N2 - Type conversion of p-GaN by direct Si+ ion implantation and subsequent annealing was demonstrated by the fabrication of lateral Schottky diodes. The Si+ activation percentage was measured as a function of annealing time (30-300 sec) and temperature (1,000-1,200°C), reaching a maximum of ∼30% for 1,200°C, 2-min anneals. The resulting n-type carrier concentration was 1.1 × 1018 cm-3 for a moderate Si+ ion dose of ∼2 × 1014 cm-2. The lateral Schottky diodes displayed a negative temperature coefficient of -0.15 V·K for reverse breakdown voltage.

AB - Type conversion of p-GaN by direct Si+ ion implantation and subsequent annealing was demonstrated by the fabrication of lateral Schottky diodes. The Si+ activation percentage was measured as a function of annealing time (30-300 sec) and temperature (1,000-1,200°C), reaching a maximum of ∼30% for 1,200°C, 2-min anneals. The resulting n-type carrier concentration was 1.1 × 1018 cm-3 for a moderate Si+ ion dose of ∼2 × 1014 cm-2. The lateral Schottky diodes displayed a negative temperature coefficient of -0.15 V·K for reverse breakdown voltage.

KW - GaN

KW - Ion implantation

KW - Lateral schottky diodes

UR - http://www.scopus.com/inward/record.url?scp=2442521418&partnerID=8YFLogxK

U2 - 10.1007/s11664-004-0196-5

DO - 10.1007/s11664-004-0196-5

M3 - Article

AN - SCOPUS:2442521418

SN - 0361-5235

VL - 33

SP - 426

EP - 430

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

IS - 5

ER -