Lateral schottky GaN rectifiers formed by Si+ ion implantation

Y. Irokawa, Jihyun Kim, F. Ren, K. H. Baik, B. P. Gila, C. R. Abernathy, S. J. Pearton, C. C. Pan, G. T. Chen, J. I. Chyi

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)


Type conversion of p-GaN by direct Si+ ion implantation and subsequent annealing was demonstrated by the fabrication of lateral Schottky diodes. The Si+ activation percentage was measured as a function of annealing time (30-300 sec) and temperature (1,000-1,200°C), reaching a maximum of ∼30% for 1,200°C, 2-min anneals. The resulting n-type carrier concentration was 1.1 × 1018 cm-3 for a moderate Si+ ion dose of ∼2 × 1014 cm-2. The lateral Schottky diodes displayed a negative temperature coefficient of -0.15 V·K for reverse breakdown voltage.

Original languageEnglish
Pages (from-to)426-430
Number of pages5
JournalJournal of Electronic Materials
Issue number5
Publication statusPublished - 2004 May
Externally publishedYes

Bibliographical note

Funding Information:
The work at the University of Florida is partially supported by EPRI and NSF. The work at the National Central University is partially supported by the Ministry of Education of the Republic of China under the Program for Promoting Academic Excellence of Universities (Grant No. 890E-FA06-1-4) and the National Science Council of the Republic of China (Grant No. NSC89-2215-E-008-031).


  • GaN
  • Ion implantation
  • Lateral schottky diodes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


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