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Lateral schottky GaN rectifiers formed by Si+ ion implantation
Y. Irokawa, Jihyun Kim, F. Ren, K. H. Baik, B. P. Gila, C. R. Abernathy, S. J. Pearton, C. C. Pan, G. T. Chen, J. I. Chyi
Research output: Contribution to journal › Article › peer-review
3
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(Scopus)