Abstract
A new Lateral Trench Insulated Gate Bipolar Transistor (LTIGBT) with p+ diverter was proposed to improve the characteristics of the conventional LTIGBT. The p+ divert layer was placed between anode electrode region and cathode electrode. Generally, if the LTIGBT had p+ divert region, forward blocking voltage was decreased, greatly because n-drift layer corresponding to punch-through was decreased. However, the forward blocking voltage of the proposed LTIGBT with p+ diverter was 140V. That of the conventional LTIGBT of the same size was 105V. The forward blocking voltage of LTIGBT with p+ diverter increased 1.3 times more than those of the conventional LTIGBT. Because the p+ diverter region of the proposed device was enclosed trench oxide layer, the electric field moved toward trench-oxide layer, and punch through breakdown of LTIGBT with p+ diverter was occurred, lately. Therefore, the p+ diverter of the proposed LTIGBT didn't related to breakdown voltage in a different way conventional LTIGBT. The Latch-up current densities of the conventional LTIGBT and LTIGBT with p+ diverter were 540A/cm2, and 1453A/cm3, respectively. The enhanced latch-up capability of the LTEIGBT was obtained through holes in the current directly reaching the cathode via the p+ divert region and p+ cathode layer beneath n+ cathode layer.
| Original language | English |
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| Pages | 2059-2062 |
| Number of pages | 4 |
| Publication status | Published - 2001 |
| Event | 2001 IEEE International Symposium on Industrial Electronics Proceedings (ISIE 2001) - Pusan, Korea, Republic of Duration: 2001 Jun 12 → 2001 Jun 16 |
Other
| Other | 2001 IEEE International Symposium on Industrial Electronics Proceedings (ISIE 2001) |
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| Country/Territory | Korea, Republic of |
| City | Pusan |
| Period | 01/6/12 → 01/6/16 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering