Laterally overgrown GaN/InGaN Multi-quantum well heterostructures: Electrical and optical properties

Alexander Polyakov; Anatoliy Govorkov; Nikolay Smirnov; Alexander Markov; In Hwan Lee; Haeng Keun Ahn; Sergey Karpov; Stephen Pearton

doi:10.1002/pssa.200983413

Laterally overgrown GaN/InGaN Multi-quantum well heterostructures: Electrical and optical properties

Alexander Polyakov, Anatoliy Govorkov, Nikolay Smirnov, Alexander Markov, In Hwan Lee, Haeng Keun Ahn, Sergey Karpov, Stephen Pearton

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

Multi-quantum well (MQW) GaN/InGaN structures prepared by epitaxial lateral overgrowth were characterized by various techniques to better understand the difference of the materials properties and heterostructure operation in the wing and window regions. Detailed interpretation of the characterization data is given, invoking quantum-mechanical simulation of the grown heterostructures.

Original language	English
Pages (from-to)	1383-1385
Number of pages	3
Journal	Physica Status Solidi (A) Applications and Materials Science
Volume	207
Issue number	6
DOIs	https://doi.org/10.1002/pssa.200983413
Publication status	Published - 2010 Jun
Externally published	Yes

Keywords

Electrical properties
GaN/InGaN
MOCVD
Optical properties
Quantum wells
Simulation

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Electrical and Electronic Engineering
Materials Chemistry

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10.1002/pssa.200983413

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abstract = "Multi-quantum well (MQW) GaN/InGaN structures prepared by epitaxial lateral overgrowth were characterized by various techniques to better understand the difference of the materials properties and heterostructure operation in the wing and window regions. Detailed interpretation of the characterization data is given, invoking quantum-mechanical simulation of the grown heterostructures.",

keywords = "Electrical properties, GaN/InGaN, MOCVD, Optical properties, Quantum wells, Simulation",

author = "Alexander Polyakov and Anatoliy Govorkov and Nikolay Smirnov and Alexander Markov and Lee, {In Hwan} and Ahn, {Haeng Keun} and Sergey Karpov and Stephen Pearton",

year = "2010",

month = jun,

doi = "10.1002/pssa.200983413",

language = "English",

volume = "207",

pages = "1383--1385",

journal = "Physica Status Solidi (A) Applications and Materials Science",

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TY - JOUR

T1 - Laterally overgrown GaN/InGaN Multi-quantum well heterostructures

T2 - Electrical and optical properties

AU - Polyakov, Alexander

AU - Govorkov, Anatoliy

AU - Smirnov, Nikolay

AU - Markov, Alexander

AU - Lee, In Hwan

AU - Ahn, Haeng Keun

AU - Karpov, Sergey

AU - Pearton, Stephen

PY - 2010/6

Y1 - 2010/6

N2 - Multi-quantum well (MQW) GaN/InGaN structures prepared by epitaxial lateral overgrowth were characterized by various techniques to better understand the difference of the materials properties and heterostructure operation in the wing and window regions. Detailed interpretation of the characterization data is given, invoking quantum-mechanical simulation of the grown heterostructures.

AB - Multi-quantum well (MQW) GaN/InGaN structures prepared by epitaxial lateral overgrowth were characterized by various techniques to better understand the difference of the materials properties and heterostructure operation in the wing and window regions. Detailed interpretation of the characterization data is given, invoking quantum-mechanical simulation of the grown heterostructures.

KW - Electrical properties

KW - GaN/InGaN

KW - MOCVD

KW - Optical properties

KW - Quantum wells

KW - Simulation

UR - http://www.scopus.com/inward/record.url?scp=77954284273&partnerID=8YFLogxK

U2 - 10.1002/pssa.200983413

DO - 10.1002/pssa.200983413

M3 - Article

AN - SCOPUS:77954284273

SN - 1862-6300

VL - 207

SP - 1383

EP - 1385

JO - Physica Status Solidi (A) Applications and Materials Science

JF - Physica Status Solidi (A) Applications and Materials Science

IS - 6

ER -

Laterally overgrown GaN/InGaN Multi-quantum well heterostructures: Electrical and optical properties

Abstract

Keywords

ASJC Scopus subject areas

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