Layer-by-layer assembled charge-trap memory devices with adjustable electronic properties

Jang Sik Lee; Jinhan Cho; Chiyoung Lee; Inpyo Kim; Jeongju Park; Yong Mu Kim; Hyunjung Shin; Jaegab Lee; Frank Caruso

doi:10.1038/nnano.2007.380

Layer-by-layer assembled charge-trap memory devices with adjustable electronic properties

Jang Sik Lee, Jinhan Cho, Chiyoung Lee, Inpyo Kim, Jeongju Park, Yong Mu Kim, Hyunjung Shin, Jaegab Lee, Frank Caruso

Research output: Contribution to journal › Article › peer-review

255 Citations (Scopus)

Abstract

We describe a versatile approach for preparing flash memory devices composed of polyelectrolyte/gold nanoparticle multilayer films. Anionic gold nanoparticles were used as the charge storage elements, and poly(allylamine)/ poly(styrenesulfonate) multilayers deposited onto hafnium oxide (HfO2)-coated silicon substrates formed the insulating layers. The top contact was formed by depositing HfO2 and platinum. In this study, we investigated the effect of increasing the number of polyelectrolyte and gold nanoparticle layers on memory performance, including the size of the memory window (the critical voltage difference between the 'programmed' and 'erased' states of the devices) and programming speed. We observed a maximum memory window of about 1.8 V, with a stored electron density of 4.2 × 1012 cm-2 in the gold nanoparticle layers, when the devices consist of three polyelectrolyte/gold nanoparticle layers. The reported approach offers new opportunities to prepare nanostructured polyelectrolyte/gold nanoparticle-based memory devices with tailored performance.

Original language	English
Pages (from-to)	790-795
Number of pages	6
Journal	Nature Nanotechnology
Volume	2
Issue number	12
DOIs	https://doi.org/10.1038/nnano.2007.380
Publication status	Published - 2007 Dec
Externally published	Yes

Bibliographical note

Funding Information:
This work was supported by the ERC Program of the MOST/KOSEF (R11-2005-048-00000-0) and the Australian Research Council under the Federation and Discovery Project Schemes. We acknowledge assistance from S. Oh in obtaining the SEM images and Y. J. Choi for the SNDM images. Correspondence and requests for material should be addressed to J.C and J.S.L. Supplementary information accompanies this paper on www.nature.com/naturenanotechnology.

ASJC Scopus subject areas

Bioengineering
Atomic and Molecular Physics, and Optics
Biomedical Engineering
General Materials Science
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1038/nnano.2007.380

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title = "Layer-by-layer assembled charge-trap memory devices with adjustable electronic properties",

abstract = "We describe a versatile approach for preparing flash memory devices composed of polyelectrolyte/gold nanoparticle multilayer films. Anionic gold nanoparticles were used as the charge storage elements, and poly(allylamine)/ poly(styrenesulfonate) multilayers deposited onto hafnium oxide (HfO2)-coated silicon substrates formed the insulating layers. The top contact was formed by depositing HfO2 and platinum. In this study, we investigated the effect of increasing the number of polyelectrolyte and gold nanoparticle layers on memory performance, including the size of the memory window (the critical voltage difference between the 'programmed' and 'erased' states of the devices) and programming speed. We observed a maximum memory window of about 1.8 V, with a stored electron density of 4.2 × 1012 cm-2 in the gold nanoparticle layers, when the devices consist of three polyelectrolyte/gold nanoparticle layers. The reported approach offers new opportunities to prepare nanostructured polyelectrolyte/gold nanoparticle-based memory devices with tailored performance.",

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AU - Kim, Yong Mu

AU - Shin, Hyunjung

AU - Lee, Jaegab

AU - Caruso, Frank

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Layer-by-layer assembled charge-trap memory devices with adjustable electronic properties

Abstract

Bibliographical note

ASJC Scopus subject areas

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