Leakage current mechanism and effect of oxygen vacancy on the leakage current of Bi5Nb3O15 films

Kyung Hoon Cho; Chang Hak Choi; Joo Young Choi; Tae Geun Seong; Sahn Nahm; Chong Yun Kang; Seok Jin Yoon; Jong Hee Kim

doi:10.1016/j.jeurceramsoc.2009.04.029

Leakage current mechanism and effect of oxygen vacancy on the leakage current of Bi₅Nb₃O₁₅ films

Kyung Hoon Cho, Chang Hak Choi, Joo Young Choi, Tae Geun Seong, Sahn Nahm, Chong Yun Kang, Seok Jin Yoon, Jong Hee Kim

Research output: Contribution to journal › Article › peer-review

16 Citations (Scopus)

Abstract

The effect of oxygen partial pressure (OPP) on the leakage current density of Bi₅Nb₃O₁₅ (B₅N₃) films grown on Pt electrodes was investigated. The leakage current density was very high for the film grown under a low OPP of 1.7 mTorr, but was significantly reduced by the subsequent annealing under a high oxygen pressure or for the film grown under high OPP of 5.1 mTorr. The variation of the leakage current density with OPP was explained by the number of oxygen vacancies, which produced electron trap sites at the interface between the Pt electrode and the B₅N₃ film. Schottky emission was postulated as the leakage current mechanism of the B₅N₃ films. The barrier height between the Pt electrode and the B₅N₃ film grown under a high OPP of 5.1 mTorr was approximately 1.55 eV, but decreased to 0.81 eV for the film grown under a low OPP of 1.7 mTorr due to the presence of the oxygen vacancy.

Original language	English
Pages (from-to)	513-516
Number of pages	4
Journal	Journal of the European Ceramic Society
Volume	30
Issue number	2
DOIs	https://doi.org/10.1016/j.jeurceramsoc.2009.04.029
Publication status	Published - 2010 Jan

Bibliographical note

Funding Information:
This research was supported by a grant from the Fundamental R&D Program for Core Technology of Materials funded by the Ministry of Commerce, Industry and Energy, Republic of Korea.

Keywords

BiNbO
Capacitors
Films
Leakage current density

ASJC Scopus subject areas

Ceramics and Composites
Materials Chemistry

Access to Document

10.1016/j.jeurceramsoc.2009.04.029

Cite this

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title = "Leakage current mechanism and effect of oxygen vacancy on the leakage current of Bi5Nb3O15 films",

abstract = "The effect of oxygen partial pressure (OPP) on the leakage current density of Bi5Nb3O15 (B5N3) films grown on Pt electrodes was investigated. The leakage current density was very high for the film grown under a low OPP of 1.7 mTorr, but was significantly reduced by the subsequent annealing under a high oxygen pressure or for the film grown under high OPP of 5.1 mTorr. The variation of the leakage current density with OPP was explained by the number of oxygen vacancies, which produced electron trap sites at the interface between the Pt electrode and the B5N3 film. Schottky emission was postulated as the leakage current mechanism of the B5N3 films. The barrier height between the Pt electrode and the B5N3 film grown under a high OPP of 5.1 mTorr was approximately 1.55 eV, but decreased to 0.81 eV for the film grown under a low OPP of 1.7 mTorr due to the presence of the oxygen vacancy.",

keywords = "BiNbO, Capacitors, Films, Leakage current density",

author = "Cho, {Kyung Hoon} and Choi, {Chang Hak} and Choi, {Joo Young} and Seong, {Tae Geun} and Sahn Nahm and Kang, {Chong Yun} and Yoon, {Seok Jin} and Kim, {Jong Hee}",

note = "Funding Information: This research was supported by a grant from the Fundamental R&D Program for Core Technology of Materials funded by the Ministry of Commerce, Industry and Energy, Republic of Korea. ",

year = "2010",

month = jan,

doi = "10.1016/j.jeurceramsoc.2009.04.029",

language = "English",

volume = "30",

pages = "513--516",

journal = "Journal of the European Ceramic Society",

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T1 - Leakage current mechanism and effect of oxygen vacancy on the leakage current of Bi5Nb3O15 films

AU - Cho, Kyung Hoon

AU - Choi, Chang Hak

AU - Choi, Joo Young

AU - Seong, Tae Geun

AU - Nahm, Sahn

AU - Kang, Chong Yun

AU - Yoon, Seok Jin

AU - Kim, Jong Hee

N1 - Funding Information: This research was supported by a grant from the Fundamental R&D Program for Core Technology of Materials funded by the Ministry of Commerce, Industry and Energy, Republic of Korea.

PY - 2010/1

Y1 - 2010/1

N2 - The effect of oxygen partial pressure (OPP) on the leakage current density of Bi5Nb3O15 (B5N3) films grown on Pt electrodes was investigated. The leakage current density was very high for the film grown under a low OPP of 1.7 mTorr, but was significantly reduced by the subsequent annealing under a high oxygen pressure or for the film grown under high OPP of 5.1 mTorr. The variation of the leakage current density with OPP was explained by the number of oxygen vacancies, which produced electron trap sites at the interface between the Pt electrode and the B5N3 film. Schottky emission was postulated as the leakage current mechanism of the B5N3 films. The barrier height between the Pt electrode and the B5N3 film grown under a high OPP of 5.1 mTorr was approximately 1.55 eV, but decreased to 0.81 eV for the film grown under a low OPP of 1.7 mTorr due to the presence of the oxygen vacancy.

AB - The effect of oxygen partial pressure (OPP) on the leakage current density of Bi5Nb3O15 (B5N3) films grown on Pt electrodes was investigated. The leakage current density was very high for the film grown under a low OPP of 1.7 mTorr, but was significantly reduced by the subsequent annealing under a high oxygen pressure or for the film grown under high OPP of 5.1 mTorr. The variation of the leakage current density with OPP was explained by the number of oxygen vacancies, which produced electron trap sites at the interface between the Pt electrode and the B5N3 film. Schottky emission was postulated as the leakage current mechanism of the B5N3 films. The barrier height between the Pt electrode and the B5N3 film grown under a high OPP of 5.1 mTorr was approximately 1.55 eV, but decreased to 0.81 eV for the film grown under a low OPP of 1.7 mTorr due to the presence of the oxygen vacancy.

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