Leakage current reduction in pentacene-based thin film transistor using asymmetric source/drain electrodes

Myung Hoon Lim; In Yeal Lee; Seong Guk Jeong; Jongtaek Lee; Woo Shik Jung; Hyun Yong Yu; Gil Ho Kim; Yonghan Roh; Jin Hong Park

doi:10.1016/j.orgel.2012.03.009

Leakage current reduction in pentacene-based thin film transistor using asymmetric source/drain electrodes

Myung Hoon Lim, In Yeal Lee, Seong Guk Jeong, Jongtaek Lee, Woo Shik Jung, Hyun Yong Yu, Gil Ho Kim, Yonghan Roh, Jin Hong Park

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

In this work, we propose the concept of achieving a lower off-current in organic thin film transistors (OTFTs) by asymmetric source/drain with low and high work-function metals. The artificial hole barrier height (h-BH) at the drain-channel junction formed by this method prevents hole carriers transport from source to drain through the pentacene layer during the off-state. On-current is not affected by this artificially formed h-BH because the effective h-BH is reduced in the on-state. As a result, in the asymmetric Ni-Ti and Ni-Al OTFTs, the off-currents are decreased by 12 and 18.3 times, respectively, compared to that in the symmetric S/D device.

Original language	English
Pages (from-to)	1056-1059
Number of pages	4
Journal	Organic Electronics
Volume	13
Issue number	6
DOIs	https://doi.org/10.1016/j.orgel.2012.03.009
Publication status	Published - 2012 Jun

Keywords

Asymmetric S/D
OTFT
Pentacene

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Chemistry(all)
Biomaterials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1016/j.orgel.2012.03.009

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@article{4d34ec56c0b046809dae0e941aea6ff1,

title = "Leakage current reduction in pentacene-based thin film transistor using asymmetric source/drain electrodes",

abstract = "In this work, we propose the concept of achieving a lower off-current in organic thin film transistors (OTFTs) by asymmetric source/drain with low and high work-function metals. The artificial hole barrier height (h-BH) at the drain-channel junction formed by this method prevents hole carriers transport from source to drain through the pentacene layer during the off-state. On-current is not affected by this artificially formed h-BH because the effective h-BH is reduced in the on-state. As a result, in the asymmetric Ni-Ti and Ni-Al OTFTs, the off-currents are decreased by 12 and 18.3 times, respectively, compared to that in the symmetric S/D device.",

keywords = "Asymmetric S/D, OTFT, Pentacene",

author = "Lim, {Myung Hoon} and Lee, {In Yeal} and Jeong, {Seong Guk} and Jongtaek Lee and Jung, {Woo Shik} and Yu, {Hyun Yong} and Kim, {Gil Ho} and Yonghan Roh and Park, {Jin Hong}",

note = "Funding Information: This work was supported by the National Research Foundation of Korea (NRF) Grant funded by the Korea Government ( NRF-2011-332-0007997 ).",

year = "2012",

month = jun,

doi = "10.1016/j.orgel.2012.03.009",

language = "English",

volume = "13",

pages = "1056--1059",

journal = "Organic Electronics: physics, materials, applications",

issn = "1566-1199",

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TY - JOUR

T1 - Leakage current reduction in pentacene-based thin film transistor using asymmetric source/drain electrodes

AU - Lim, Myung Hoon

AU - Lee, In Yeal

AU - Jeong, Seong Guk

AU - Lee, Jongtaek

AU - Jung, Woo Shik

AU - Yu, Hyun Yong

AU - Kim, Gil Ho

AU - Roh, Yonghan

AU - Park, Jin Hong

N1 - Funding Information: This work was supported by the National Research Foundation of Korea (NRF) Grant funded by the Korea Government ( NRF-2011-332-0007997 ).

PY - 2012/6

Y1 - 2012/6

N2 - In this work, we propose the concept of achieving a lower off-current in organic thin film transistors (OTFTs) by asymmetric source/drain with low and high work-function metals. The artificial hole barrier height (h-BH) at the drain-channel junction formed by this method prevents hole carriers transport from source to drain through the pentacene layer during the off-state. On-current is not affected by this artificially formed h-BH because the effective h-BH is reduced in the on-state. As a result, in the asymmetric Ni-Ti and Ni-Al OTFTs, the off-currents are decreased by 12 and 18.3 times, respectively, compared to that in the symmetric S/D device.

AB - In this work, we propose the concept of achieving a lower off-current in organic thin film transistors (OTFTs) by asymmetric source/drain with low and high work-function metals. The artificial hole barrier height (h-BH) at the drain-channel junction formed by this method prevents hole carriers transport from source to drain through the pentacene layer during the off-state. On-current is not affected by this artificially formed h-BH because the effective h-BH is reduced in the on-state. As a result, in the asymmetric Ni-Ti and Ni-Al OTFTs, the off-currents are decreased by 12 and 18.3 times, respectively, compared to that in the symmetric S/D device.

KW - Asymmetric S/D

KW - OTFT

KW - Pentacene

UR - http://www.scopus.com/inward/record.url?scp=84859294163&partnerID=8YFLogxK

U2 - 10.1016/j.orgel.2012.03.009

DO - 10.1016/j.orgel.2012.03.009

M3 - Article

AN - SCOPUS:84859294163

SN - 1566-1199

VL - 13

SP - 1056

EP - 1059

JO - Organic Electronics: physics, materials, applications

JF - Organic Electronics: physics, materials, applications

IS - 6

ER -

Leakage current reduction in pentacene-based thin film transistor using asymmetric source/drain electrodes

Abstract

Keywords

ASJC Scopus subject areas

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