Abstract
In this work, we propose the concept of achieving a lower off-current in organic thin film transistors (OTFTs) by asymmetric source/drain with low and high work-function metals. The artificial hole barrier height (h-BH) at the drain-channel junction formed by this method prevents hole carriers transport from source to drain through the pentacene layer during the off-state. On-current is not affected by this artificially formed h-BH because the effective h-BH is reduced in the on-state. As a result, in the asymmetric Ni-Ti and Ni-Al OTFTs, the off-currents are decreased by 12 and 18.3 times, respectively, compared to that in the symmetric S/D device.
Original language | English |
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Pages (from-to) | 1056-1059 |
Number of pages | 4 |
Journal | Organic Electronics |
Volume | 13 |
Issue number | 6 |
DOIs | |
Publication status | Published - 2012 Jun |
Keywords
- Asymmetric S/D
- OTFT
- Pentacene
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Chemistry(all)
- Biomaterials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry