LER-induced random variation-immune effect of metal-interlayer-semiconductor source/drain structure on N-Type ge junctionless FinFETs

Seung Geun Jung, Euyjin Park, Changhwan Shin, Hyun Yong Yu

    Research output: Contribution to journalArticlepeer-review

    3 Citations (Scopus)

    Abstract

    Herein, the line-edge roughness (LER)-induced random performance variation-immune effect of metal-interlayer-semiconductor (MIS) source/drain (S/D) in 7 nm n-type Ge (n-Ge) junctionless field-effect transistors (JLFETs) were investigated by 3-D TCAD simulations. Compared to the device without MIS S/D, the n-Ge JLFET with MIS S/D could effectively reduce the Ge fin doping concentration while maintaining the performance. It was demonstrated analytically that the reduced Ge fin doping concentration of the device with MIS S/D, compared to the device without MIS S/D, decreased the LER-induced random performance variations of the n-Ge JLFET; the standard deviations were reduced to 0.0318 V for Vth (reduced by 51.6%), 4.89 × 10-6 A/μm for Ion (reduced by 92.1%), 1.44 × 10-9 A/μm for Ioff (reduced by 93.7%), 1.27 mV/dec for SS (reduced by 23.1%), and 5.40 mV/V for drain-induced barrier lowering (DIBL) (reduced by 30.8%). In addition, LER-induced random performance variation was investigated in terms of scaling down fin widths. The results provided critical insight into the variability reduction of the 7 nm n-Ge JLFETs.

    Original languageEnglish
    Article number9329148
    Pages (from-to)1340-1345
    Number of pages6
    JournalIEEE Transactions on Electron Devices
    Volume68
    Issue number3
    DOIs
    Publication statusPublished - 2021 Mar

    Bibliographical note

    Publisher Copyright:
    © 1963-2012 IEEE.

    Keywords

    • Ge
    • interlayer (IL)
    • junctionless field-effect transistor (JLFET)
    • line-edge roughness (LERs)
    • random performance variation

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Electrical and Electronic Engineering

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