Less mobility degradation induced by transverse electric-field in junctionless transistors

So Jeong Park; Dae Young Jeon; Laurent Montes; Mireille Mouis; Sylvain Barraud; Gyu Tae Kim; Gérard Ghibaudo

doi:10.1063/1.4902549

Less mobility degradation induced by transverse electric-field in junctionless transistors

So Jeong Park, Dae Young Jeon, Laurent Montes, Mireille Mouis, Sylvain Barraud, Gyu Tae Kim, Gérard Ghibaudo

Research output: Contribution to journal › Article › peer-review

17 Citations (Scopus)

Abstract

The mobility degradation by the relaxed electric-field in junctionless transistor (JLT) has been studied experimentally and theoretically. JLT showed less mobility degradation compared to the inversion-mode transistor in both planar-like and nanowire structures. The unique transconductance shape and the reduced degradation of the mobility in the nanowire JLT showed that it still has bulk neutral conduction portion in its total conduction while the immunity to the mobility degradation of JLT is enhanced with planar-structure. 2-dimensional numerical simulation confirmed the reduced transverse electric-field with bulk neutral conduction in JLT as well as the deviation of transconductance degradation by the channel doping concentration and the channel top width.

Original language	English
Article number	213504
Journal	Applied Physics Letters
Volume	105
Issue number	21
DOIs	https://doi.org/10.1063/1.4902549
Publication status	Published - 2014 Nov 24

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Publisher Copyright:
© 2014 AIP Publishing LLC.

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.4902549

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abstract = "The mobility degradation by the relaxed electric-field in junctionless transistor (JLT) has been studied experimentally and theoretically. JLT showed less mobility degradation compared to the inversion-mode transistor in both planar-like and nanowire structures. The unique transconductance shape and the reduced degradation of the mobility in the nanowire JLT showed that it still has bulk neutral conduction portion in its total conduction while the immunity to the mobility degradation of JLT is enhanced with planar-structure. 2-dimensional numerical simulation confirmed the reduced transverse electric-field with bulk neutral conduction in JLT as well as the deviation of transconductance degradation by the channel doping concentration and the channel top width.",

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AU - Park, So Jeong

AU - Jeon, Dae Young

AU - Montes, Laurent

AU - Mouis, Mireille

AU - Barraud, Sylvain

AU - Kim, Gyu Tae

AU - Ghibaudo, Gérard

PY - 2014/11/24

Y1 - 2014/11/24

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AB - The mobility degradation by the relaxed electric-field in junctionless transistor (JLT) has been studied experimentally and theoretically. JLT showed less mobility degradation compared to the inversion-mode transistor in both planar-like and nanowire structures. The unique transconductance shape and the reduced degradation of the mobility in the nanowire JLT showed that it still has bulk neutral conduction portion in its total conduction while the immunity to the mobility degradation of JLT is enhanced with planar-structure. 2-dimensional numerical simulation confirmed the reduced transverse electric-field with bulk neutral conduction in JLT as well as the deviation of transconductance degradation by the channel doping concentration and the channel top width.

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Less mobility degradation induced by transverse electric-field in junctionless transistors

Abstract

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