Less mobility degradation induced by transverse electric-field in junctionless transistors

So Jeong Park; Dae Young Jeon; Laurent Montes; Mireille Mouis; Sylvain Barraud; Gyu Tae Kim; Gérard Ghibaudo

doi:10.1063/1.4902549

Less mobility degradation induced by transverse electric-field in junctionless transistors

So Jeong Park, Dae Young Jeon, Laurent Montes, Mireille Mouis, Sylvain Barraud, Gyu Tae Kim, Gérard Ghibaudo

Research output: Contribution to journal › Article › peer-review

16 Citations (Scopus)

Abstract

The mobility degradation by the relaxed electric-field in junctionless transistor (JLT) has been studied experimentally and theoretically. JLT showed less mobility degradation compared to the inversion-mode transistor in both planar-like and nanowire structures. The unique transconductance shape and the reduced degradation of the mobility in the nanowire JLT showed that it still has bulk neutral conduction portion in its total conduction while the immunity to the mobility degradation of JLT is enhanced with planar-structure. 2-dimensional numerical simulation confirmed the reduced transverse electric-field with bulk neutral conduction in JLT as well as the deviation of transconductance degradation by the channel doping concentration and the channel top width.

Original language	English
Article number	213504
Journal	Applied Physics Letters
Volume	105
Issue number	21
DOIs	https://doi.org/10.1063/1.4902549
Publication status	Published - 2014 Nov 24

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.4902549

Cite this

@article{f2b8bd1c6bc048c48d888de2455e740e,

title = "Less mobility degradation induced by transverse electric-field in junctionless transistors",

abstract = "The mobility degradation by the relaxed electric-field in junctionless transistor (JLT) has been studied experimentally and theoretically. JLT showed less mobility degradation compared to the inversion-mode transistor in both planar-like and nanowire structures. The unique transconductance shape and the reduced degradation of the mobility in the nanowire JLT showed that it still has bulk neutral conduction portion in its total conduction while the immunity to the mobility degradation of JLT is enhanced with planar-structure. 2-dimensional numerical simulation confirmed the reduced transverse electric-field with bulk neutral conduction in JLT as well as the deviation of transconductance degradation by the channel doping concentration and the channel top width.",

author = "Park, {So Jeong} and Jeon, {Dae Young} and Laurent Montes and Mireille Mouis and Sylvain Barraud and Kim, {Gyu Tae} and G{\'e}rard Ghibaudo",

note = "Publisher Copyright: {\textcopyright} 2014 AIP Publishing LLC.",

year = "2014",

month = nov,

day = "24",

doi = "10.1063/1.4902549",

language = "English",

volume = "105",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "21",

}

TY - JOUR

T1 - Less mobility degradation induced by transverse electric-field in junctionless transistors

AU - Park, So Jeong

AU - Jeon, Dae Young

AU - Montes, Laurent

AU - Mouis, Mireille

AU - Barraud, Sylvain

AU - Kim, Gyu Tae

AU - Ghibaudo, Gérard

PY - 2014/11/24

Y1 - 2014/11/24

N2 - The mobility degradation by the relaxed electric-field in junctionless transistor (JLT) has been studied experimentally and theoretically. JLT showed less mobility degradation compared to the inversion-mode transistor in both planar-like and nanowire structures. The unique transconductance shape and the reduced degradation of the mobility in the nanowire JLT showed that it still has bulk neutral conduction portion in its total conduction while the immunity to the mobility degradation of JLT is enhanced with planar-structure. 2-dimensional numerical simulation confirmed the reduced transverse electric-field with bulk neutral conduction in JLT as well as the deviation of transconductance degradation by the channel doping concentration and the channel top width.

AB - The mobility degradation by the relaxed electric-field in junctionless transistor (JLT) has been studied experimentally and theoretically. JLT showed less mobility degradation compared to the inversion-mode transistor in both planar-like and nanowire structures. The unique transconductance shape and the reduced degradation of the mobility in the nanowire JLT showed that it still has bulk neutral conduction portion in its total conduction while the immunity to the mobility degradation of JLT is enhanced with planar-structure. 2-dimensional numerical simulation confirmed the reduced transverse electric-field with bulk neutral conduction in JLT as well as the deviation of transconductance degradation by the channel doping concentration and the channel top width.

UR - http://www.scopus.com/inward/record.url?scp=84912142904&partnerID=8YFLogxK

U2 - 10.1063/1.4902549

DO - 10.1063/1.4902549

M3 - Article

AN - SCOPUS:84912142904

SN - 0003-6951

VL - 105

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 21

M1 - 213504

ER -

Less mobility degradation induced by transverse electric-field in junctionless transistors

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this