Lift-off process using bilayer ultraviolet nanoimprint lithography and methacryloxypropyl-terminated-polydimethylsiloxane-based imprint resin

Ho Yong Jung; Seon Yong Hwang; Byeong Ju Bae; Heon Lee

doi:10.1116/1.3156739

Lift-off process using bilayer ultraviolet nanoimprint lithography and methacryloxypropyl-terminated-polydimethylsiloxane-based imprint resin

Ho Yong Jung, Seon Yong Hwang, Byeong Ju Bae, Heon Lee

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

A high-fidelity lift-off process using bilayer ultraviolet nanoimprint lithography (UV-NIL) to fabricate nanosized metal pattern was demonstrated. High O₂ reactive ion etching (RIE) selectivity of the imprinted resist pattern to the underlayer is necessary to create the undercut pattern profile that is essential for the stable lift-off process. A methacryloxypropyl- terminated polydimethylsiloxane (M-PDMS)-based UV-curable liquid-phase imprint resin and a polyvinyl alcohol (PVA) underlayer were applied to bilayer UV-NIL for the high-fidelity lift-off process. The M-PDMS-based imprinted resist pattern showed high etch resistance to O₂ plasma and the undercut pattern profile of the PVA underlayer for the lift-off process was formed by the O₂ RIE process. The size and shape of the imprinted resist patterns were hardly changed during PVA underlayer etching by O₂ RIE. As a result, high-fidelity and high-aspect-ratio metal patterns without rabbit-ear-shaped defects were fabricated by the lift-off process using bilayer UV-NIL with the M-PDMS-based imprint resin, which has high etch resistance to O₂ RIE, and the PVA underlayer.

Original language	English
Pages (from-to)	1861-1864
Number of pages	4
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	27
Issue number	4
DOIs	https://doi.org/10.1116/1.3156739
Publication status	Published - 2009

Bibliographical note

Funding Information:
This work was supported by the Korea Small and Medium Business Administration (SMBA) and the Korea Research Foundation Grant funded by the Korean Government (MOEHRD, Basic Research Promotion Fund) (KRF-2006-003-D00266).

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

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10.1116/1.3156739

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Lift-off process using bilayer ultraviolet nanoimprint lithography and methacryloxypropyl-terminated-polydimethylsiloxane-based imprint resin. / Jung, Ho Yong; Hwang, Seon Yong; Bae, Byeong Ju et al.
In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 27, No. 4, 2009, p. 1861-1864.

Research output: Contribution to journal › Article › peer-review

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title = "Lift-off process using bilayer ultraviolet nanoimprint lithography and methacryloxypropyl-terminated-polydimethylsiloxane-based imprint resin",

abstract = "A high-fidelity lift-off process using bilayer ultraviolet nanoimprint lithography (UV-NIL) to fabricate nanosized metal pattern was demonstrated. High O2 reactive ion etching (RIE) selectivity of the imprinted resist pattern to the underlayer is necessary to create the undercut pattern profile that is essential for the stable lift-off process. A methacryloxypropyl- terminated polydimethylsiloxane (M-PDMS)-based UV-curable liquid-phase imprint resin and a polyvinyl alcohol (PVA) underlayer were applied to bilayer UV-NIL for the high-fidelity lift-off process. The M-PDMS-based imprinted resist pattern showed high etch resistance to O2 plasma and the undercut pattern profile of the PVA underlayer for the lift-off process was formed by the O2 RIE process. The size and shape of the imprinted resist patterns were hardly changed during PVA underlayer etching by O2 RIE. As a result, high-fidelity and high-aspect-ratio metal patterns without rabbit-ear-shaped defects were fabricated by the lift-off process using bilayer UV-NIL with the M-PDMS-based imprint resin, which has high etch resistance to O2 RIE, and the PVA underlayer.",

author = "Jung, {Ho Yong} and Hwang, {Seon Yong} and Bae, {Byeong Ju} and Heon Lee",

note = "Funding Information: This work was supported by the Korea Small and Medium Business Administration (SMBA) and the Korea Research Foundation Grant funded by the Korean Government (MOEHRD, Basic Research Promotion Fund) (KRF-2006-003-D00266). ",

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AU - Jung, Ho Yong

AU - Hwang, Seon Yong

AU - Bae, Byeong Ju

AU - Lee, Heon

N1 - Funding Information: This work was supported by the Korea Small and Medium Business Administration (SMBA) and the Korea Research Foundation Grant funded by the Korean Government (MOEHRD, Basic Research Promotion Fund) (KRF-2006-003-D00266).

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N2 - A high-fidelity lift-off process using bilayer ultraviolet nanoimprint lithography (UV-NIL) to fabricate nanosized metal pattern was demonstrated. High O2 reactive ion etching (RIE) selectivity of the imprinted resist pattern to the underlayer is necessary to create the undercut pattern profile that is essential for the stable lift-off process. A methacryloxypropyl- terminated polydimethylsiloxane (M-PDMS)-based UV-curable liquid-phase imprint resin and a polyvinyl alcohol (PVA) underlayer were applied to bilayer UV-NIL for the high-fidelity lift-off process. The M-PDMS-based imprinted resist pattern showed high etch resistance to O2 plasma and the undercut pattern profile of the PVA underlayer for the lift-off process was formed by the O2 RIE process. The size and shape of the imprinted resist patterns were hardly changed during PVA underlayer etching by O2 RIE. As a result, high-fidelity and high-aspect-ratio metal patterns without rabbit-ear-shaped defects were fabricated by the lift-off process using bilayer UV-NIL with the M-PDMS-based imprint resin, which has high etch resistance to O2 RIE, and the PVA underlayer.

AB - A high-fidelity lift-off process using bilayer ultraviolet nanoimprint lithography (UV-NIL) to fabricate nanosized metal pattern was demonstrated. High O2 reactive ion etching (RIE) selectivity of the imprinted resist pattern to the underlayer is necessary to create the undercut pattern profile that is essential for the stable lift-off process. A methacryloxypropyl- terminated polydimethylsiloxane (M-PDMS)-based UV-curable liquid-phase imprint resin and a polyvinyl alcohol (PVA) underlayer were applied to bilayer UV-NIL for the high-fidelity lift-off process. The M-PDMS-based imprinted resist pattern showed high etch resistance to O2 plasma and the undercut pattern profile of the PVA underlayer for the lift-off process was formed by the O2 RIE process. The size and shape of the imprinted resist patterns were hardly changed during PVA underlayer etching by O2 RIE. As a result, high-fidelity and high-aspect-ratio metal patterns without rabbit-ear-shaped defects were fabricated by the lift-off process using bilayer UV-NIL with the M-PDMS-based imprint resin, which has high etch resistance to O2 RIE, and the PVA underlayer.

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Lift-off process using bilayer ultraviolet nanoimprint lithography and methacryloxypropyl-terminated-polydimethylsiloxane-based imprint resin

Abstract

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ASJC Scopus subject areas

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