Light-current characteristics of highly p-doped 1.55 μm diffraction-limited high-power laser diodes

Il Ki Han; Deok Ha Woo; Sun Ho Kim; Jung Il Lee; Du Chang Heo; Ji Chai Jeong; Fred G. Johnson; Si Hyung Cho; Jung Ho Song; Peter J.S. Heim; Mario Dagenais

Light-current characteristics of highly p-doped 1.55 μm diffraction-limited high-power laser diodes

Il Ki Han^*, Deok Ha Woo, Sun Ho Kim, Jung Il Lee, Du Chang Heo, Ji Chai Jeong, Fred G. Johnson, Si Hyung Cho, Jung Ho Song, Peter J.S. Heim, Mario Dagenais

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

The variation of the light-current characteristics of diffraction-limited high-power laser diodes is investigated with different p-doping profiles in the two-step separate-confinement heterostructure (SCH) 1.55-μm InGaAs-InP laser structure. A dramatic increase in the optical output power is observed in the structure with high delta doping at the heterointerfaces and moderate doping at the thick SCH layer. In the structure, a continuous-wave output power of about 0.8 W at a temperature of 15 °C was obtained with the nearly diffraction-limited central lobe of the far field. Such an improvement of device performance is attributed to a reduction of the injected carrier overflow into the SCH layer.

Original language	English
Pages (from-to)	177-181
Number of pages	5
Journal	Journal of the Korean Physical Society
Volume	38
Issue number	3
Publication status	Published - 2001 Mar

ASJC Scopus subject areas

General Physics and Astronomy

Cite this

@article{4e2b571680724c778b430085137bd210,

title = "Light-current characteristics of highly p-doped 1.55 μm diffraction-limited high-power laser diodes",

abstract = "The variation of the light-current characteristics of diffraction-limited high-power laser diodes is investigated with different p-doping profiles in the two-step separate-confinement heterostructure (SCH) 1.55-μm InGaAs-InP laser structure. A dramatic increase in the optical output power is observed in the structure with high delta doping at the heterointerfaces and moderate doping at the thick SCH layer. In the structure, a continuous-wave output power of about 0.8 W at a temperature of 15 °C was obtained with the nearly diffraction-limited central lobe of the far field. Such an improvement of device performance is attributed to a reduction of the injected carrier overflow into the SCH layer.",

author = "Han, \{Il Ki\} and Woo, \{Deok Ha\} and Kim, \{Sun Ho\} and Lee, \{Jung Il\} and Heo, \{Du Chang\} and Jeong, \{Ji Chai\} and Johnson, \{Fred G.\} and Cho, \{Si Hyung\} and Song, \{Jung Ho\} and Heim, \{Peter J.S.\} and Mario Dagenais",

year = "2001",

month = mar,

language = "English",

volume = "38",

pages = "177--181",

journal = "Journal of the Korean Physical Society",

issn = "0374-4884",

publisher = "Korean Physical Society",

number = "3",

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TY - JOUR

T1 - Light-current characteristics of highly p-doped 1.55 μm diffraction-limited high-power laser diodes

AU - Han, Il Ki

AU - Woo, Deok Ha

AU - Kim, Sun Ho

AU - Lee, Jung Il

AU - Heo, Du Chang

AU - Jeong, Ji Chai

AU - Johnson, Fred G.

AU - Cho, Si Hyung

AU - Song, Jung Ho

AU - Heim, Peter J.S.

AU - Dagenais, Mario

PY - 2001/3

Y1 - 2001/3

N2 - The variation of the light-current characteristics of diffraction-limited high-power laser diodes is investigated with different p-doping profiles in the two-step separate-confinement heterostructure (SCH) 1.55-μm InGaAs-InP laser structure. A dramatic increase in the optical output power is observed in the structure with high delta doping at the heterointerfaces and moderate doping at the thick SCH layer. In the structure, a continuous-wave output power of about 0.8 W at a temperature of 15 °C was obtained with the nearly diffraction-limited central lobe of the far field. Such an improvement of device performance is attributed to a reduction of the injected carrier overflow into the SCH layer.

AB - The variation of the light-current characteristics of diffraction-limited high-power laser diodes is investigated with different p-doping profiles in the two-step separate-confinement heterostructure (SCH) 1.55-μm InGaAs-InP laser structure. A dramatic increase in the optical output power is observed in the structure with high delta doping at the heterointerfaces and moderate doping at the thick SCH layer. In the structure, a continuous-wave output power of about 0.8 W at a temperature of 15 °C was obtained with the nearly diffraction-limited central lobe of the far field. Such an improvement of device performance is attributed to a reduction of the injected carrier overflow into the SCH layer.

UR - https://www.scopus.com/pages/publications/0035532352

M3 - Article

AN - SCOPUS:0035532352

SN - 0374-4884

VL - 38

SP - 177

EP - 181

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

IS - 3

ER -

Light-current characteristics of highly p-doped 1.55 μm diffraction-limited high-power laser diodes

Abstract

ASJC Scopus subject areas

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