Abstract
In this work we report an experimental demonstration of the concept of EL pixel with tip-shaped Si reflector earlier proposed by us. The new concept is based on the use of Si-tip reflectors as part of a edge emitting pixel. Based on this concept we propose novel structures and fabricate TFEL pixel surrounded by Si-tip reflectors. These picture elements create a well-concentrated visible light around the point reflectors under the bipolar pulse excitation. The concept can be applied in fields where effective control of the luminance is important.
Original language | English |
---|---|
Pages | 312-313 |
Number of pages | 2 |
Publication status | Published - 1998 |
Event | Proceedings of the 1998 11th International Vacuum Microelectronics Conference, IVMC - Asheville, NC, USA Duration: 1998 Jul 19 → 1998 Jul 24 |
Other
Other | Proceedings of the 1998 11th International Vacuum Microelectronics Conference, IVMC |
---|---|
City | Asheville, NC, USA |
Period | 98/7/19 → 98/7/24 |
ASJC Scopus subject areas
- Surfaces and Interfaces