Light-emitting diodes composed of n-ZnO and p-Si nanowires constructed on plastic substrates by dielectrophoresis

Kwangeun Kim; Taeho Moon; Myeongwon Lee; Jeongmin Kang; Youngin Jeon; Sangsig Kim

doi:10.1016/j.solidstatesciences.2011.06.028

Light-emitting diodes composed of n-ZnO and p-Si nanowires constructed on plastic substrates by dielectrophoresis

Kwangeun Kim, Taeho Moon, Myeongwon Lee, Jeongmin Kang, Youngin Jeon, Sangsig Kim

Research output: Contribution to journal › Article › peer-review

25 Citations (Scopus)

Abstract

In this study, light-emitting diodes (LEDs) composed of n-ZnO and p-Si nanowires (NWs) are constructed on flexible plastic substrates and their electroluminescence (EL) emission is characterized and analyzed in the flat and bent states. For each of the LEDs, ZnO NWs are aligned between the electrodes and crossed with a single Si NW by means of a dielectrophoresis (DEP). The number of aligned ZnO NWs determines the current levels and EL intensities of the LEDs. The EL spectra taken from the LEDs exhibit two types of emission, strong UV peaks at 385 nm and weak broad bands centered at 510 nm. The bending test of a single ZnO NW LED under a strain of 0.65% in the upwardly or downwardly bent states reveals that the turn-on voltage remains unchanged at 3 V and that the EL emission characteristics are stable. In addition, the performance of the LED is recovered when the device is returned to the flat state again after undergoing bending test.

Original language	English
Pages (from-to)	1735-1739
Number of pages	5
Journal	Solid State Sciences
Volume	13
Issue number	9
DOIs	https://doi.org/10.1016/j.solidstatesciences.2011.06.028
Publication status	Published - 2011 Sept

Bibliographical note

Funding Information:
This work was supported by the IT R&D program of MKE/KEIT [ 10030559 , Development of next generation high performance organic/nano materials and printing process technology], the Nano R&D Program ( M10703000980-08M0300-98010 ), World Class University ( WCU, R32-2008-000-10082-0 ) Project of the Ministry of Education, Science and Technology (Korea Science and Engineering Foundation), Hynix-Korea University Nano-Semiconductor Program , and a Korea University Grant

Keywords

Dielectrophoresis (DEP)
Flexible electronics
Light-emitting diodes (LEDs)
Nanowires (NWs)
Si
ZnO

ASJC Scopus subject areas

General Chemistry
General Materials Science
Condensed Matter Physics

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10.1016/j.solidstatesciences.2011.06.028

Cite this

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title = "Light-emitting diodes composed of n-ZnO and p-Si nanowires constructed on plastic substrates by dielectrophoresis",

abstract = "In this study, light-emitting diodes (LEDs) composed of n-ZnO and p-Si nanowires (NWs) are constructed on flexible plastic substrates and their electroluminescence (EL) emission is characterized and analyzed in the flat and bent states. For each of the LEDs, ZnO NWs are aligned between the electrodes and crossed with a single Si NW by means of a dielectrophoresis (DEP). The number of aligned ZnO NWs determines the current levels and EL intensities of the LEDs. The EL spectra taken from the LEDs exhibit two types of emission, strong UV peaks at 385 nm and weak broad bands centered at 510 nm. The bending test of a single ZnO NW LED under a strain of 0.65% in the upwardly or downwardly bent states reveals that the turn-on voltage remains unchanged at 3 V and that the EL emission characteristics are stable. In addition, the performance of the LED is recovered when the device is returned to the flat state again after undergoing bending test.",

keywords = "Dielectrophoresis (DEP), Flexible electronics, Light-emitting diodes (LEDs), Nanowires (NWs), Si, ZnO",

author = "Kwangeun Kim and Taeho Moon and Myeongwon Lee and Jeongmin Kang and Youngin Jeon and Sangsig Kim",

note = "Funding Information: This work was supported by the IT R&D program of MKE/KEIT [ 10030559 , Development of next generation high performance organic/nano materials and printing process technology], the Nano R&D Program ( M10703000980-08M0300-98010 ), World Class University ( WCU, R32-2008-000-10082-0 ) Project of the Ministry of Education, Science and Technology (Korea Science and Engineering Foundation), Hynix-Korea University Nano-Semiconductor Program , and a Korea University Grant",

year = "2011",

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doi = "10.1016/j.solidstatesciences.2011.06.028",

language = "English",

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pages = "1735--1739",

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AU - Kim, Kwangeun

AU - Moon, Taeho

AU - Lee, Myeongwon

AU - Kang, Jeongmin

AU - Jeon, Youngin

AU - Kim, Sangsig

N1 - Funding Information: This work was supported by the IT R&D program of MKE/KEIT [ 10030559 , Development of next generation high performance organic/nano materials and printing process technology], the Nano R&D Program ( M10703000980-08M0300-98010 ), World Class University ( WCU, R32-2008-000-10082-0 ) Project of the Ministry of Education, Science and Technology (Korea Science and Engineering Foundation), Hynix-Korea University Nano-Semiconductor Program , and a Korea University Grant

PY - 2011/9

Y1 - 2011/9

N2 - In this study, light-emitting diodes (LEDs) composed of n-ZnO and p-Si nanowires (NWs) are constructed on flexible plastic substrates and their electroluminescence (EL) emission is characterized and analyzed in the flat and bent states. For each of the LEDs, ZnO NWs are aligned between the electrodes and crossed with a single Si NW by means of a dielectrophoresis (DEP). The number of aligned ZnO NWs determines the current levels and EL intensities of the LEDs. The EL spectra taken from the LEDs exhibit two types of emission, strong UV peaks at 385 nm and weak broad bands centered at 510 nm. The bending test of a single ZnO NW LED under a strain of 0.65% in the upwardly or downwardly bent states reveals that the turn-on voltage remains unchanged at 3 V and that the EL emission characteristics are stable. In addition, the performance of the LED is recovered when the device is returned to the flat state again after undergoing bending test.

AB - In this study, light-emitting diodes (LEDs) composed of n-ZnO and p-Si nanowires (NWs) are constructed on flexible plastic substrates and their electroluminescence (EL) emission is characterized and analyzed in the flat and bent states. For each of the LEDs, ZnO NWs are aligned between the electrodes and crossed with a single Si NW by means of a dielectrophoresis (DEP). The number of aligned ZnO NWs determines the current levels and EL intensities of the LEDs. The EL spectra taken from the LEDs exhibit two types of emission, strong UV peaks at 385 nm and weak broad bands centered at 510 nm. The bending test of a single ZnO NW LED under a strain of 0.65% in the upwardly or downwardly bent states reveals that the turn-on voltage remains unchanged at 3 V and that the EL emission characteristics are stable. In addition, the performance of the LED is recovered when the device is returned to the flat state again after undergoing bending test.

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KW - Nanowires (NWs)

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Light-emitting diodes composed of n-ZnO and p-Si nanowires constructed on plastic substrates by dielectrophoresis

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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