Light extraction enhancement of GaN-based light emitting diodes using MgF2 /Al omnidirectional reflectors

Hyunsoo Kim; Sung Nam Lee; Youngjo Park; Kyoung Kook Kim; Joon Seop Kwak; Tae Yeon Seong

doi:10.1063/1.2973685

Light extraction enhancement of GaN-based light emitting diodes using MgF2 /Al omnidirectional reflectors

Hyunsoo Kim, Sung Nam Lee, Youngjo Park, Kyoung Kook Kim, Joon Seop Kwak, Tae Yeon Seong

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

21 Citations (Scopus)

Abstract

We report on the enhancement of the light extraction of GaN-based light emitting diodes (LEDs) by using MgF2 /Al omnidirectional reflectors (ODRs). The ODRs consisting of a quarter-wavelength-thick MgF2 having a refractive index of 1.39 and Al metal produce a high-angle-integrated reflectivity of 96.6%. To optimize the electrical injection and light reflection, the MgF2 /Al ODRs are combined with Pd/Ag metallic reflectors using mesh configuration. Compared to reference LEDs, LEDs fabricated with the MgF2 /Al ODRs show an enhanced output power by 23% and a slight increase in the forward voltage by 0.18 V, leading to the improvement in power efficiency by 17%.

Original language	English
Article number	053111
Journal	Journal of Applied Physics
Volume	104
Issue number	5
DOIs	https://doi.org/10.1063/1.2973685
Publication status	Published - 2008

ASJC Scopus subject areas

Physics and Astronomy(all)

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10.1063/1.2973685

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abstract = "We report on the enhancement of the light extraction of GaN-based light emitting diodes (LEDs) by using MgF2 /Al omnidirectional reflectors (ODRs). The ODRs consisting of a quarter-wavelength-thick MgF2 having a refractive index of 1.39 and Al metal produce a high-angle-integrated reflectivity of 96.6%. To optimize the electrical injection and light reflection, the MgF2 /Al ODRs are combined with Pd/Ag metallic reflectors using mesh configuration. Compared to reference LEDs, LEDs fabricated with the MgF2 /Al ODRs show an enhanced output power by 23% and a slight increase in the forward voltage by 0.18 V, leading to the improvement in power efficiency by 17%.",

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AU - Kim, Hyunsoo

AU - Lee, Sung Nam

AU - Park, Youngjo

AU - Kim, Kyoung Kook

AU - Kwak, Joon Seop

AU - Seong, Tae Yeon

PY - 2008

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AB - We report on the enhancement of the light extraction of GaN-based light emitting diodes (LEDs) by using MgF2 /Al omnidirectional reflectors (ODRs). The ODRs consisting of a quarter-wavelength-thick MgF2 having a refractive index of 1.39 and Al metal produce a high-angle-integrated reflectivity of 96.6%. To optimize the electrical injection and light reflection, the MgF2 /Al ODRs are combined with Pd/Ag metallic reflectors using mesh configuration. Compared to reference LEDs, LEDs fabricated with the MgF2 /Al ODRs show an enhanced output power by 23% and a slight increase in the forward voltage by 0.18 V, leading to the improvement in power efficiency by 17%.

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Light extraction enhancement of GaN-based light emitting diodes using MgF2 /Al omnidirectional reflectors

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