Abstract
We report on the enhancement of the light extraction of GaN-based light emitting diodes (LEDs) by using MgF2 /Al omnidirectional reflectors (ODRs). The ODRs consisting of a quarter-wavelength-thick MgF2 having a refractive index of 1.39 and Al metal produce a high-angle-integrated reflectivity of 96.6%. To optimize the electrical injection and light reflection, the MgF2 /Al ODRs are combined with Pd/Ag metallic reflectors using mesh configuration. Compared to reference LEDs, LEDs fabricated with the MgF2 /Al ODRs show an enhanced output power by 23% and a slight increase in the forward voltage by 0.18 V, leading to the improvement in power efficiency by 17%.
Original language | English |
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Article number | 053111 |
Journal | Journal of Applied Physics |
Volume | 104 |
Issue number | 5 |
DOIs | |
Publication status | Published - 2008 |
ASJC Scopus subject areas
- Physics and Astronomy(all)