Light-extraction enhancement of vertical-injection GaN-based light-emitting diodes fabricated with highly integrated surface textures

  • H. Kim*
  • , K. K. Choi
  • , K. K. Kim
  • , J. Cho
  • , S. N. Lee
  • , Y. Park
  • , J. S. Kwak
  • , T. Y. Seong
  • *Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    70 Citations (Scopus)

    Abstract

    We report on the fabrication of high-efficiency vertical-injection GaN-based light-emitting diodes (LEDs) fabricated with integrated surface textures. An optical ray-tracing simulation shows that the high integration of surface textures can effectively enhance the light-extraction efficiency. The integrated surface textures are fabricated on the top surface of LEDs by generating hexagonal cones on the periodically corrugated surfaces of Ti-GaN. Compared to reference LEDs without textures, LEDs fabricated with integrated surface textures show an enhancement of the output power by a factor of 2.59, which is in agreement with the calculated results.

    Original languageEnglish
    Pages (from-to)1273-1275
    Number of pages3
    JournalOptics Letters
    Volume33
    Issue number11
    DOIs
    Publication statusPublished - 2008 Jun 1

    ASJC Scopus subject areas

    • Atomic and Molecular Physics, and Optics

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