Light-output enhancement of GaN-based vertical light-emitting diodes using periodic and conical nanopillar structures

Su Jin Kim; Kyeong Heon Kim; Ho Young Chung; Hee Woong Shin; Byeong Ryong Lee; Tak Jeong; Hyung Jo Park; Tae Geun Kim

doi:10.1364/OL.39.003464

Light-output enhancement of GaN-based vertical light-emitting diodes using periodic and conical nanopillar structures

Su Jin Kim, Kyeong Heon Kim, Ho Young Chung, Hee Woong Shin, Byeong Ryong Lee, Tak Jeong, Hyung Jo Park, Tae Geun Kim

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

We investigated GaN-based vertical light-emitting diodes (VLEDs) with periodic and conical nanopillar arrays (CNAs) to improve the light-output efficiency. We found that a 470 nm diameter and 0.8-0.9 μm height increased the light output, and the devices suffered no significant electrical property degradations. The light-output power was 272% and 5.1% greater than flat- and rough-surface VLEDs at 350 mA, respectively. These improved optical properties are attributed to the optimized CNAs, which increase the effective photon escape cone and reduce the total internal reflection at the n-GaN-air interface. We also investigated the emission characteristics and mechanisms with finite-difference time-domain simulations.

Original language	English
Pages (from-to)	3464-3467
Number of pages	4
Journal	Optics Letters
Volume	39
Issue number	12
DOIs	https://doi.org/10.1364/OL.39.003464
Publication status	Published - 2014 Jun 15

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics

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title = "Light-output enhancement of GaN-based vertical light-emitting diodes using periodic and conical nanopillar structures",

abstract = "We investigated GaN-based vertical light-emitting diodes (VLEDs) with periodic and conical nanopillar arrays (CNAs) to improve the light-output efficiency. We found that a 470 nm diameter and 0.8-0.9 μm height increased the light output, and the devices suffered no significant electrical property degradations. The light-output power was 272% and 5.1% greater than flat- and rough-surface VLEDs at 350 mA, respectively. These improved optical properties are attributed to the optimized CNAs, which increase the effective photon escape cone and reduce the total internal reflection at the n-GaN-air interface. We also investigated the emission characteristics and mechanisms with finite-difference time-domain simulations.",

author = "Kim, {Su Jin} and Kim, {Kyeong Heon} and Chung, {Ho Young} and Shin, {Hee Woong} and Lee, {Byeong Ryong} and Tak Jeong and Park, {Hyung Jo} and Kim, {Tae Geun}",

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T1 - Light-output enhancement of GaN-based vertical light-emitting diodes using periodic and conical nanopillar structures

AU - Kim, Su Jin

AU - Kim, Kyeong Heon

AU - Chung, Ho Young

AU - Shin, Hee Woong

AU - Lee, Byeong Ryong

AU - Jeong, Tak

AU - Park, Hyung Jo

AU - Kim, Tae Geun

PY - 2014/6/15

Y1 - 2014/6/15

N2 - We investigated GaN-based vertical light-emitting diodes (VLEDs) with periodic and conical nanopillar arrays (CNAs) to improve the light-output efficiency. We found that a 470 nm diameter and 0.8-0.9 μm height increased the light output, and the devices suffered no significant electrical property degradations. The light-output power was 272% and 5.1% greater than flat- and rough-surface VLEDs at 350 mA, respectively. These improved optical properties are attributed to the optimized CNAs, which increase the effective photon escape cone and reduce the total internal reflection at the n-GaN-air interface. We also investigated the emission characteristics and mechanisms with finite-difference time-domain simulations.

AB - We investigated GaN-based vertical light-emitting diodes (VLEDs) with periodic and conical nanopillar arrays (CNAs) to improve the light-output efficiency. We found that a 470 nm diameter and 0.8-0.9 μm height increased the light output, and the devices suffered no significant electrical property degradations. The light-output power was 272% and 5.1% greater than flat- and rough-surface VLEDs at 350 mA, respectively. These improved optical properties are attributed to the optimized CNAs, which increase the effective photon escape cone and reduce the total internal reflection at the n-GaN-air interface. We also investigated the emission characteristics and mechanisms with finite-difference time-domain simulations.

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Light-output enhancement of GaN-based vertical light-emitting diodes using periodic and conical nanopillar structures

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