Light output performance of red AlGaInP-based light emitting diodes with different chip geometries and structures

Jeong Tak Oh, Sang Youl Lee, Yong Tae Moon, Hyung Moon Ji, Sunwoo Park, Yong Hong Ki, Young Song Ki, Chan Hyoung Oh, Jong In Shim, Hwan Hee Jeong, June O. Song, Hiroshi Amano, Tae Yeon Seong

Research output: Contribution to journalArticlepeer-review

105 Citations (Scopus)

Abstract

We investigated the optical and electrical properties of red AlGaInP light-emitting diodes (LEDs) as functions of chip size, p-cladding layer thickness, and the number of multi-quantum wells (MQWs). External quantum efficiency (EQE) decreased with decreasing chip size. The ideality factor gradually increased from 1.47 to 1.95 as the chip size decreased from 350 μm to 15 μm. This indicates that the smaller LEDs experienced larger carrier loss due to Shockley-Read-Hall nonradiative recombination at sidewall defects. S parameter, defined as ∂lnL/∂lnI, increased with decreasing chip size. Simulations and experimental results showed that smaller LEDs with 5 pairs of MQWs had over 30% higher IQE at 5 A/cm2 than the LED with 20 pairs of MQWs. These results show that the optimization of the number of QWs is needed to obtain maximum EQE of micro-LEDs.

Original languageEnglish
Pages (from-to)11194-11200
Number of pages7
JournalOptics Express
Volume26
Issue number9
DOIs
Publication statusPublished - 2018 Apr 30

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

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