Abstract
A liquid CO2 (l-CO2)–based coating technique is used for the pore-filling of a porous copper indium gallium sulfide (CuInxGa1−xS2, CIGS) film synthesized by a solution-based method. In the l-CO2–based coating, copper and indium precursors dissolved in l-CO2 are deposited on the porous copper indium gallium oxide film, followed by low-temperature sulfurization. After the high-temperature sulfurization of the deposited film with the l-CO2–based coating, a highly dense CIGS film with almost complete pore-filling is obtained. The use of an indium rich solution in l-CO2 leads to the formation of near stoichiometric ratio of Cu:(In + Ga) that improves the pore filling behavior.
Original language | English |
---|---|
Pages (from-to) | 453-459 |
Number of pages | 7 |
Journal | Journal of Supercritical Fluids |
Volume | 120 |
DOIs | |
Publication status | Published - 2017 Feb 1 |
Bibliographical note
Funding Information:This work was supported by the Energy Technology Development Program of the Korea Institute of Energy Technology Evaluation and Planning (KETEP) grant (No. 20143030011530 ) funded by the Korean government . The authors would also like to thank the program of the Korea Institute of Science and Technology (KIST).
Publisher Copyright:
© 2016 Elsevier B.V.
Keywords
- CuInGaS
- Liquid CO
- Pore-filling
ASJC Scopus subject areas
- General Chemical Engineering
- Condensed Matter Physics
- Physical and Theoretical Chemistry