Liquid CO2-based coating for dense CuInxGa1−xS2 film fabrication

Eduardus Budi Nursanto; Se Jin Park; Yun Jeong Hwang; Jaehoon Kim; Byoung Koun Min

doi:10.1016/j.supflu.2016.05.023

Liquid CO₂-based coating for dense CuIn_xGa_1−xS₂ film fabrication

Eduardus Budi Nursanto, Se Jin Park, Yun Jeong Hwang, Jaehoon Kim, Byoung Koun Min

GREEN SCHOOL (Graduate School of Energy and Environment)

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

A liquid CO₂ (l-CO₂)–based coating technique is used for the pore-filling of a porous copper indium gallium sulfide (CuIn_xGa_1−xS₂, CIGS) film synthesized by a solution-based method. In the l-CO₂–based coating, copper and indium precursors dissolved in l-CO₂ are deposited on the porous copper indium gallium oxide film, followed by low-temperature sulfurization. After the high-temperature sulfurization of the deposited film with the l-CO₂–based coating, a highly dense CIGS film with almost complete pore-filling is obtained. The use of an indium rich solution in l-CO₂ leads to the formation of near stoichiometric ratio of Cu:(In + Ga) that improves the pore filling behavior.

Original language	English
Pages (from-to)	453-459
Number of pages	7
Journal	Journal of Supercritical Fluids
Volume	120
DOIs	https://doi.org/10.1016/j.supflu.2016.05.023
Publication status	Published - 2017 Feb 1

Keywords

CuInGaS
Liquid CO
Pore-filling

ASJC Scopus subject areas

Chemical Engineering(all)
Condensed Matter Physics
Physical and Theoretical Chemistry

Access to Document

10.1016/j.supflu.2016.05.023

Cite this

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title = "Liquid CO2-based coating for dense CuInxGa1−xS2 film fabrication",

abstract = "A liquid CO2 (l-CO2)–based coating technique is used for the pore-filling of a porous copper indium gallium sulfide (CuInxGa1−xS2, CIGS) film synthesized by a solution-based method. In the l-CO2–based coating, copper and indium precursors dissolved in l-CO2 are deposited on the porous copper indium gallium oxide film, followed by low-temperature sulfurization. After the high-temperature sulfurization of the deposited film with the l-CO2–based coating, a highly dense CIGS film with almost complete pore-filling is obtained. The use of an indium rich solution in l-CO2 leads to the formation of near stoichiometric ratio of Cu:(In + Ga) that improves the pore filling behavior.",

keywords = "CuInGaS, Liquid CO, Pore-filling",

author = "Nursanto, {Eduardus Budi} and Park, {Se Jin} and Hwang, {Yun Jeong} and Jaehoon Kim and Min, {Byoung Koun}",

note = "Funding Information: This work was supported by the Energy Technology Development Program of the Korea Institute of Energy Technology Evaluation and Planning (KETEP) grant (No. 20143030011530 ) funded by the Korean government . The authors would also like to thank the program of the Korea Institute of Science and Technology (KIST). Publisher Copyright: {\textcopyright} 2016 Elsevier B.V.",

year = "2017",

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doi = "10.1016/j.supflu.2016.05.023",

language = "English",

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T1 - Liquid CO2-based coating for dense CuInxGa1−xS2 film fabrication

AU - Nursanto, Eduardus Budi

AU - Park, Se Jin

AU - Hwang, Yun Jeong

AU - Kim, Jaehoon

AU - Min, Byoung Koun

N1 - Funding Information: This work was supported by the Energy Technology Development Program of the Korea Institute of Energy Technology Evaluation and Planning (KETEP) grant (No. 20143030011530 ) funded by the Korean government . The authors would also like to thank the program of the Korea Institute of Science and Technology (KIST). Publisher Copyright: © 2016 Elsevier B.V.

PY - 2017/2/1

Y1 - 2017/2/1

N2 - A liquid CO2 (l-CO2)–based coating technique is used for the pore-filling of a porous copper indium gallium sulfide (CuInxGa1−xS2, CIGS) film synthesized by a solution-based method. In the l-CO2–based coating, copper and indium precursors dissolved in l-CO2 are deposited on the porous copper indium gallium oxide film, followed by low-temperature sulfurization. After the high-temperature sulfurization of the deposited film with the l-CO2–based coating, a highly dense CIGS film with almost complete pore-filling is obtained. The use of an indium rich solution in l-CO2 leads to the formation of near stoichiometric ratio of Cu:(In + Ga) that improves the pore filling behavior.

AB - A liquid CO2 (l-CO2)–based coating technique is used for the pore-filling of a porous copper indium gallium sulfide (CuInxGa1−xS2, CIGS) film synthesized by a solution-based method. In the l-CO2–based coating, copper and indium precursors dissolved in l-CO2 are deposited on the porous copper indium gallium oxide film, followed by low-temperature sulfurization. After the high-temperature sulfurization of the deposited film with the l-CO2–based coating, a highly dense CIGS film with almost complete pore-filling is obtained. The use of an indium rich solution in l-CO2 leads to the formation of near stoichiometric ratio of Cu:(In + Ga) that improves the pore filling behavior.

KW - CuInGaS

KW - Liquid CO

KW - Pore-filling

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