Lithography-free fabrication of field effect transistor channels with randomly contact-printed black phosphorus flakes

Seolhee Yoo; Sangsig Kim; Yong Won Song

doi:10.1016/j.mssp.2018.06.010

Lithography-free fabrication of field effect transistor channels with randomly contact-printed black phosphorus flakes

Seolhee Yoo, Sangsig Kim, Yong Won Song

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

Black phosphorus (BP) has distinctive properties of tunable direct band gap as a semiconductor material, and both high carrier mobility and on/off switching performance for electronic devices, but has a significant drawback of material degradation in ambient atmosphere. Also, unlike graphene or MoS₂, BP is only synthesized in bulk shapes limiting the fabrication of thin film-based devices. We demonstrated a contact printing process for BP field effect transistors (FET) with the steps of mechanical exfoliation of BP flakes and their randomized stamping in dry-transfer regime. The contact printing featured by fast, continuous and solvent-free process on the pre-patterned electrodes guarantees high process efficiency providing immunity against the chemical degradation of BP layers. With asymmetric I-V characteristics, the resultant BP-channelized FET shows the electrical properties of on/off current ratio, hole mobility, and subthreshold swing as > 10², ~ 130 cm²/Vs, and ~ 4.6 V/dec, respectively.

Original language	English
Pages (from-to)	58-62
Number of pages	5
Journal	Materials Science in Semiconductor Processing
Volume	86
DOIs	https://doi.org/10.1016/j.mssp.2018.06.010
Publication status	Published - 2018 Nov 1

Bibliographical note

Funding Information:
This work was supported by the National Research Foundation (NRF), funded by the Ministry of Science, ICT and Future Planning, South Korea (Grant No. NRF-2015R1A2A2A04006979). Also supported by the Institutional Program (2E28200) funded by the Korea Institute of Science and Technology (KIST), South Korea.

Funding Information:
This work was supported by the National Research Foundation (NRF), funded by the Ministry of Science, ICT and Future Planning, South Korea (Grant No. NRF-2015R1A2A2A04006979 ). Also supported by the Institutional Program ( 2E28200 ) funded by the Korea Institute of Science and Technology (KIST), South Korea.

Publisher Copyright:
© 2018 Elsevier Ltd

Keywords

Black phosphorus
Contact printing
Field effect transistor
Lithography-free

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1016/j.mssp.2018.06.010

Cite this

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title = "Lithography-free fabrication of field effect transistor channels with randomly contact-printed black phosphorus flakes",

abstract = "Black phosphorus (BP) has distinctive properties of tunable direct band gap as a semiconductor material, and both high carrier mobility and on/off switching performance for electronic devices, but has a significant drawback of material degradation in ambient atmosphere. Also, unlike graphene or MoS2, BP is only synthesized in bulk shapes limiting the fabrication of thin film-based devices. We demonstrated a contact printing process for BP field effect transistors (FET) with the steps of mechanical exfoliation of BP flakes and their randomized stamping in dry-transfer regime. The contact printing featured by fast, continuous and solvent-free process on the pre-patterned electrodes guarantees high process efficiency providing immunity against the chemical degradation of BP layers. With asymmetric I-V characteristics, the resultant BP-channelized FET shows the electrical properties of on/off current ratio, hole mobility, and subthreshold swing as > 102, ~ 130 cm2/Vs, and ~ 4.6 V/dec, respectively.",

keywords = "Black phosphorus, Contact printing, Field effect transistor, Lithography-free",

author = "Seolhee Yoo and Sangsig Kim and Song, {Yong Won}",

note = "Funding Information: This work was supported by the National Research Foundation (NRF), funded by the Ministry of Science, ICT and Future Planning, South Korea (Grant No. NRF-2015R1A2A2A04006979). Also supported by the Institutional Program (2E28200) funded by the Korea Institute of Science and Technology (KIST), South Korea. Funding Information: This work was supported by the National Research Foundation (NRF), funded by the Ministry of Science, ICT and Future Planning, South Korea (Grant No. NRF-2015R1A2A2A04006979 ). Also supported by the Institutional Program ( 2E28200 ) funded by the Korea Institute of Science and Technology (KIST), South Korea. Publisher Copyright: {\textcopyright} 2018 Elsevier Ltd",

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AU - Yoo, Seolhee

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N1 - Funding Information: This work was supported by the National Research Foundation (NRF), funded by the Ministry of Science, ICT and Future Planning, South Korea (Grant No. NRF-2015R1A2A2A04006979). Also supported by the Institutional Program (2E28200) funded by the Korea Institute of Science and Technology (KIST), South Korea. Funding Information: This work was supported by the National Research Foundation (NRF), funded by the Ministry of Science, ICT and Future Planning, South Korea (Grant No. NRF-2015R1A2A2A04006979 ). Also supported by the Institutional Program ( 2E28200 ) funded by the Korea Institute of Science and Technology (KIST), South Korea. Publisher Copyright: © 2018 Elsevier Ltd

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N2 - Black phosphorus (BP) has distinctive properties of tunable direct band gap as a semiconductor material, and both high carrier mobility and on/off switching performance for electronic devices, but has a significant drawback of material degradation in ambient atmosphere. Also, unlike graphene or MoS2, BP is only synthesized in bulk shapes limiting the fabrication of thin film-based devices. We demonstrated a contact printing process for BP field effect transistors (FET) with the steps of mechanical exfoliation of BP flakes and their randomized stamping in dry-transfer regime. The contact printing featured by fast, continuous and solvent-free process on the pre-patterned electrodes guarantees high process efficiency providing immunity against the chemical degradation of BP layers. With asymmetric I-V characteristics, the resultant BP-channelized FET shows the electrical properties of on/off current ratio, hole mobility, and subthreshold swing as > 102, ~ 130 cm2/Vs, and ~ 4.6 V/dec, respectively.

AB - Black phosphorus (BP) has distinctive properties of tunable direct band gap as a semiconductor material, and both high carrier mobility and on/off switching performance for electronic devices, but has a significant drawback of material degradation in ambient atmosphere. Also, unlike graphene or MoS2, BP is only synthesized in bulk shapes limiting the fabrication of thin film-based devices. We demonstrated a contact printing process for BP field effect transistors (FET) with the steps of mechanical exfoliation of BP flakes and their randomized stamping in dry-transfer regime. The contact printing featured by fast, continuous and solvent-free process on the pre-patterned electrodes guarantees high process efficiency providing immunity against the chemical degradation of BP layers. With asymmetric I-V characteristics, the resultant BP-channelized FET shows the electrical properties of on/off current ratio, hole mobility, and subthreshold swing as > 102, ~ 130 cm2/Vs, and ~ 4.6 V/dec, respectively.

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Lithography-free fabrication of field effect transistor channels with randomly contact-printed black phosphorus flakes

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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