Localized-surface-plasmon-enhanced multifunction silicon nanomembrane Schottky diodes based on Au nanoparticles

Hyeon Jun Ha, Byung Hyun Kang, Seung Won Yeom, Junsu Park, Yun-Hi Lee, Byeong Kwon Ju

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)


Au nanoparticle (NP)-modified Si nanomembrane (Si NM) Schottky barrier diodes (SBDs) were fabricated by using a transfer-printing method to create pedestals using only one photomask on a flexible substrate. The transfer using the pedestals afforded a yield of >95% with no significant cracks. The plasmonic Au NPs can facilitate the improvement of the incident optical absorption. The Au NP-modified Si NM SBD exhibited enhanced photoresponse characteristics with an external quantum efficiency (hEQE) of 34%, a photosensitivity (P) of 27 at a voltage bias of -5 V, a light intensity of 1.2Wcm?2, and a responsivity (Rph ) of 0.21 AW?1. Additionally, the mechanical bending characteristics of the device were observed while a compressive strain up to 0.62% was applied to the diode. The results suggest that the Au NP-modified Si NM SBD has great potential for use in multifunction devices as a strain sensor and photosensor.

Original languageEnglish
Article number485501
Issue number48
Publication statusPublished - 2015 Nov 6


  • Au nanoparticle
  • localized surface plasmon
  • photosensor
  • Schottky barrier diode
  • silicon nanomembrane
  • strain sensor

ASJC Scopus subject areas

  • Bioengineering
  • General Chemistry
  • Electrical and Electronic Engineering
  • Mechanical Engineering
  • Mechanics of Materials
  • General Materials Science


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