Localized-surface-plasmon-enhanced multifunction silicon nanomembrane Schottky diodes based on Au nanoparticles

Hyeon Jun Ha; Byung Hyun Kang; Seung Won Yeom; Junsu Park; Yun-Hi Lee; Byeong Kwon Ju

doi:10.1088/0957-4484/26/48/485501

Localized-surface-plasmon-enhanced multifunction silicon nanomembrane Schottky diodes based on Au nanoparticles

Hyeon Jun Ha, Byung Hyun Kang, Seung Won Yeom, Junsu Park, Yun-Hi Lee, Byeong Kwon Ju

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

Au nanoparticle (NP)-modified Si nanomembrane (Si NM) Schottky barrier diodes (SBDs) were fabricated by using a transfer-printing method to create pedestals using only one photomask on a flexible substrate. The transfer using the pedestals afforded a yield of >95% with no significant cracks. The plasmonic Au NPs can facilitate the improvement of the incident optical absorption. The Au NP-modified Si NM SBD exhibited enhanced photoresponse characteristics with an external quantum efficiency (hEQE) of 34%, a photosensitivity (P) of 27 at a voltage bias of -5 V, a light intensity of 1.2Wcm^?2, and a responsivity (R_ph ) of 0.21 AW^?1. Additionally, the mechanical bending characteristics of the device were observed while a compressive strain up to 0.62% was applied to the diode. The results suggest that the Au NP-modified Si NM SBD has great potential for use in multifunction devices as a strain sensor and photosensor.

Original language	English
Article number	485501
Journal	Nanotechnology
Volume	26
Issue number	48
DOIs	https://doi.org/10.1088/0957-4484/26/48/485501
Publication status	Published - 2015 Nov 6

Keywords

Au nanoparticle
localized surface plasmon
photosensor
Schottky barrier diode
silicon nanomembrane
strain sensor

ASJC Scopus subject areas

Bioengineering
Chemistry(all)
Electrical and Electronic Engineering
Mechanical Engineering
Mechanics of Materials
Materials Science(all)

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title = "Localized-surface-plasmon-enhanced multifunction silicon nanomembrane Schottky diodes based on Au nanoparticles",

abstract = "Au nanoparticle (NP)-modified Si nanomembrane (Si NM) Schottky barrier diodes (SBDs) were fabricated by using a transfer-printing method to create pedestals using only one photomask on a flexible substrate. The transfer using the pedestals afforded a yield of >95% with no significant cracks. The plasmonic Au NPs can facilitate the improvement of the incident optical absorption. The Au NP-modified Si NM SBD exhibited enhanced photoresponse characteristics with an external quantum efficiency (hEQE) of 34%, a photosensitivity (P) of 27 at a voltage bias of -5 V, a light intensity of 1.2Wcm?2, and a responsivity (Rph ) of 0.21 AW?1. Additionally, the mechanical bending characteristics of the device were observed while a compressive strain up to 0.62% was applied to the diode. The results suggest that the Au NP-modified Si NM SBD has great potential for use in multifunction devices as a strain sensor and photosensor.",

keywords = "Au nanoparticle, localized surface plasmon, photosensor, Schottky barrier diode, silicon nanomembrane, strain sensor",

author = "Ha, {Hyeon Jun} and Kang, {Byung Hyun} and Yeom, {Seung Won} and Junsu Park and Yun-Hi Lee and Ju, {Byeong Kwon}",

year = "2015",

month = nov,

day = "6",

doi = "10.1088/0957-4484/26/48/485501",

language = "English",

volume = "26",

journal = "Nanotechnology",

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T1 - Localized-surface-plasmon-enhanced multifunction silicon nanomembrane Schottky diodes based on Au nanoparticles

AU - Ha, Hyeon Jun

AU - Kang, Byung Hyun

AU - Yeom, Seung Won

AU - Park, Junsu

AU - Lee, Yun-Hi

AU - Ju, Byeong Kwon

PY - 2015/11/6

Y1 - 2015/11/6

N2 - Au nanoparticle (NP)-modified Si nanomembrane (Si NM) Schottky barrier diodes (SBDs) were fabricated by using a transfer-printing method to create pedestals using only one photomask on a flexible substrate. The transfer using the pedestals afforded a yield of >95% with no significant cracks. The plasmonic Au NPs can facilitate the improvement of the incident optical absorption. The Au NP-modified Si NM SBD exhibited enhanced photoresponse characteristics with an external quantum efficiency (hEQE) of 34%, a photosensitivity (P) of 27 at a voltage bias of -5 V, a light intensity of 1.2Wcm?2, and a responsivity (Rph ) of 0.21 AW?1. Additionally, the mechanical bending characteristics of the device were observed while a compressive strain up to 0.62% was applied to the diode. The results suggest that the Au NP-modified Si NM SBD has great potential for use in multifunction devices as a strain sensor and photosensor.

AB - Au nanoparticle (NP)-modified Si nanomembrane (Si NM) Schottky barrier diodes (SBDs) were fabricated by using a transfer-printing method to create pedestals using only one photomask on a flexible substrate. The transfer using the pedestals afforded a yield of >95% with no significant cracks. The plasmonic Au NPs can facilitate the improvement of the incident optical absorption. The Au NP-modified Si NM SBD exhibited enhanced photoresponse characteristics with an external quantum efficiency (hEQE) of 34%, a photosensitivity (P) of 27 at a voltage bias of -5 V, a light intensity of 1.2Wcm?2, and a responsivity (Rph ) of 0.21 AW?1. Additionally, the mechanical bending characteristics of the device were observed while a compressive strain up to 0.62% was applied to the diode. The results suggest that the Au NP-modified Si NM SBD has great potential for use in multifunction devices as a strain sensor and photosensor.

KW - Au nanoparticle

KW - localized surface plasmon

KW - photosensor

KW - Schottky barrier diode

KW - silicon nanomembrane

KW - strain sensor

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Localized-surface-plasmon-enhanced multifunction silicon nanomembrane Schottky diodes based on Au nanoparticles

Abstract

Keywords

ASJC Scopus subject areas

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