Localized surface plasmon enhanced quantum efficiency of InGaN/GaN quantum wells by Ag/SiO2 nanoparticles

Lee Woon Jang; Dae Woo Jeon; Trilochan Sahoo; Dong Seob Jo; Jin Woo Ju; Seung Jae Lee; Jong Hyeob Baek; Jin Kyu Yang; Jung Hoon Song; Alexander Y. Polyakov; In Hwan Lee

doi:10.1364/OE.20.002116

Localized surface plasmon enhanced quantum efficiency of InGaN/GaN quantum wells by Ag/SiO₂ nanoparticles

Lee Woon Jang, Dae Woo Jeon, Trilochan Sahoo, Dong Seob Jo, Jin Woo Ju, Seung Jae Lee, Jong Hyeob Baek, Jin Kyu Yang, Jung Hoon Song, Alexander Y. Polyakov, In Hwan Lee

Research output: Contribution to journal › Article › peer-review

41 Citations (Scopus)

Abstract

Optical properties of InGaN/GaN multi-quantum-well (MQW) structures with a nanolayer of Ag/SiO₂ nanoparticle (NP) on top were studied. Modeling and optical absorption (OA) measurements prove that the NPs form localized surface plasmons (LSP) structure with a broad OA band peaked near 440-460 nm and the fringe electric field extending down to about 10 nm into the GaN layer. The presence of this NP LSP electrical field increases the photoluminescence (PL) intensity of the MQW structure by about 70% and markedly decreases the time-resolved PL (TRPL) relaxation time due to the strong coupling of MQW emission to the LSP mode.

Original language	English
Pages (from-to)	2116-2123
Number of pages	8
Journal	Optics Express
Volume	20
Issue number	3
DOIs	https://doi.org/10.1364/OE.20.002116
Publication status	Published - 2012 Jan 30
Externally published	Yes

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics

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title = "Localized surface plasmon enhanced quantum efficiency of InGaN/GaN quantum wells by Ag/SiO2 nanoparticles",

abstract = "Optical properties of InGaN/GaN multi-quantum-well (MQW) structures with a nanolayer of Ag/SiO2 nanoparticle (NP) on top were studied. Modeling and optical absorption (OA) measurements prove that the NPs form localized surface plasmons (LSP) structure with a broad OA band peaked near 440-460 nm and the fringe electric field extending down to about 10 nm into the GaN layer. The presence of this NP LSP electrical field increases the photoluminescence (PL) intensity of the MQW structure by about 70% and markedly decreases the time-resolved PL (TRPL) relaxation time due to the strong coupling of MQW emission to the LSP mode.",

author = "Jang, {Lee Woon} and Jeon, {Dae Woo} and Trilochan Sahoo and Jo, {Dong Seob} and Ju, {Jin Woo} and Lee, {Seung Jae} and Baek, {Jong Hyeob} and Yang, {Jin Kyu} and Song, {Jung Hoon} and Polyakov, {Alexander Y.} and Lee, {In Hwan}",

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doi = "10.1364/OE.20.002116",

language = "English",

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journal = "Optics Express",

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T1 - Localized surface plasmon enhanced quantum efficiency of InGaN/GaN quantum wells by Ag/SiO2 nanoparticles

AU - Jang, Lee Woon

AU - Jeon, Dae Woo

AU - Sahoo, Trilochan

AU - Jo, Dong Seob

AU - Ju, Jin Woo

AU - Lee, Seung Jae

AU - Baek, Jong Hyeob

AU - Yang, Jin Kyu

AU - Song, Jung Hoon

AU - Polyakov, Alexander Y.

AU - Lee, In Hwan

PY - 2012/1/30

Y1 - 2012/1/30

N2 - Optical properties of InGaN/GaN multi-quantum-well (MQW) structures with a nanolayer of Ag/SiO2 nanoparticle (NP) on top were studied. Modeling and optical absorption (OA) measurements prove that the NPs form localized surface plasmons (LSP) structure with a broad OA band peaked near 440-460 nm and the fringe electric field extending down to about 10 nm into the GaN layer. The presence of this NP LSP electrical field increases the photoluminescence (PL) intensity of the MQW structure by about 70% and markedly decreases the time-resolved PL (TRPL) relaxation time due to the strong coupling of MQW emission to the LSP mode.

AB - Optical properties of InGaN/GaN multi-quantum-well (MQW) structures with a nanolayer of Ag/SiO2 nanoparticle (NP) on top were studied. Modeling and optical absorption (OA) measurements prove that the NPs form localized surface plasmons (LSP) structure with a broad OA band peaked near 440-460 nm and the fringe electric field extending down to about 10 nm into the GaN layer. The presence of this NP LSP electrical field increases the photoluminescence (PL) intensity of the MQW structure by about 70% and markedly decreases the time-resolved PL (TRPL) relaxation time due to the strong coupling of MQW emission to the LSP mode.

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JO - Optics Express

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Localized surface plasmon enhanced quantum efficiency of InGaN/GaN quantum wells by Ag/SiO₂ nanoparticles

Abstract

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