Logic-In-Memory Characteristics of Reconfigurable Feedback Field-Effect Transistors with Double-Gated Structure

Yunwoo Shin, Jaemin Son, Juhee Jeon, Kyoungah Cho, Sangsig Kim

Research output: Contribution to journalArticlepeer-review

Abstract

The reconfigurable feedback field-effect transistors (R-FBFETs) with a double-gated structure are designed and the logic and memory operations of a logic-in-memory (LIM) inverter comprising two R-FBFETs are investigated. The R-FBFETs exhibit an extremely low subthreshold swing of ≈1 mV dec−1, a high on/off current ratio of ≈107, and a long retention time of 10 s, owing to a positive feedback loop mechanism. The on-current ratio of the p- to n-channel modes is 1.03, which indicates a high degree of reconfigurability. The LIM inverter retains the output logic “1” and “0” states for over 50 s under zero-bias conditions. The symmetric reconfigurable switching and memory operations of the R-FBFETs enable the LIM inverter to perform logic and memory operations for a long retention time without a power supply.

Original languageEnglish
Article number2300132
JournalAdvanced Electronic Materials
Volume9
Issue number8
DOIs
Publication statusPublished - 2023 Aug

Bibliographical note

Funding Information:
This research was partly supported by a National Research Foundation of Korea (NRF) grant funded by the Korean government (MSIT) (2020R1A2C3004538, 2022M3I7A3046571), the Brain Korea 21 Plus Project through the NRF funded by the Ministry of Science, ICT & Future Planning, Samsung Electronics (IO201223‐08257‐01), and a Korea University Grant.

Publisher Copyright:
© 2023 The Authors. Advanced Electronic Materials published by Wiley-VCH GmbH.

Keywords

  • double-gated structures
  • inverters
  • logic-in-memory
  • positive feedback loop mechanisms
  • reconfigurable

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

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