Logic-In-Memory Characteristics of Reconfigurable Feedback Field-Effect Transistors with Double-Gated Structure

Yunwoo Shin, Jaemin Son, Juhee Jeon, Kyoungah Cho, Sangsig Kim

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

The reconfigurable feedback field-effect transistors (R-FBFETs) with a double-gated structure are designed and the logic and memory operations of a logic-in-memory (LIM) inverter comprising two R-FBFETs are investigated. The R-FBFETs exhibit an extremely low subthreshold swing of ≈1 mV dec−1, a high on/off current ratio of ≈107, and a long retention time of 10 s, owing to a positive feedback loop mechanism. The on-current ratio of the p- to n-channel modes is 1.03, which indicates a high degree of reconfigurability. The LIM inverter retains the output logic “1” and “0” states for over 50 s under zero-bias conditions. The symmetric reconfigurable switching and memory operations of the R-FBFETs enable the LIM inverter to perform logic and memory operations for a long retention time without a power supply.

Original languageEnglish
Article number2300132
JournalAdvanced Electronic Materials
Volume9
Issue number8
DOIs
Publication statusPublished - 2023 Aug

Bibliographical note

Publisher Copyright:
© 2023 The Authors. Advanced Electronic Materials published by Wiley-VCH GmbH.

Keywords

  • double-gated structures
  • inverters
  • logic-in-memory
  • positive feedback loop mechanisms
  • reconfigurable

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

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