Logic-In-Memory Characteristics of Reconfigurable Feedback Field-Effect Transistors with Double-Gated Structure

Yunwoo Shin; Jaemin Son; Juhee Jeon; Kyoungah Cho; Sangsig Kim

doi:10.1002/aelm.202300132

Logic-In-Memory Characteristics of Reconfigurable Feedback Field-Effect Transistors with Double-Gated Structure

Yunwoo Shin, Jaemin Son, Juhee Jeon, Kyoungah Cho, Sangsig Kim

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

The reconfigurable feedback field-effect transistors (R-FBFETs) with a double-gated structure are designed and the logic and memory operations of a logic-in-memory (LIM) inverter comprising two R-FBFETs are investigated. The R-FBFETs exhibit an extremely low subthreshold swing of ≈1 mV dec⁻¹, a high on/off current ratio of ≈10⁷, and a long retention time of 10 s, owing to a positive feedback loop mechanism. The on-current ratio of the p- to n-channel modes is 1.03, which indicates a high degree of reconfigurability. The LIM inverter retains the output logic “1” and “0” states for over 50 s under zero-bias conditions. The symmetric reconfigurable switching and memory operations of the R-FBFETs enable the LIM inverter to perform logic and memory operations for a long retention time without a power supply.

Original language	English
Article number	2300132
Journal	Advanced Electronic Materials
Volume	9
Issue number	8
DOIs	https://doi.org/10.1002/aelm.202300132
Publication status	Published - 2023 Aug

Bibliographical note

Publisher Copyright:
© 2023 The Authors. Advanced Electronic Materials published by Wiley-VCH GmbH.

Keywords

double-gated structures
inverters
logic-in-memory
positive feedback loop mechanisms
reconfigurable

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials

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10.1002/aelm.202300132

Cite this

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title = "Logic-In-Memory Characteristics of Reconfigurable Feedback Field-Effect Transistors with Double-Gated Structure",

abstract = "The reconfigurable feedback field-effect transistors (R-FBFETs) with a double-gated structure are designed and the logic and memory operations of a logic-in-memory (LIM) inverter comprising two R-FBFETs are investigated. The R-FBFETs exhibit an extremely low subthreshold swing of ≈1 mV dec−1, a high on/off current ratio of ≈107, and a long retention time of 10 s, owing to a positive feedback loop mechanism. The on-current ratio of the p- to n-channel modes is 1.03, which indicates a high degree of reconfigurability. The LIM inverter retains the output logic “1” and “0” states for over 50 s under zero-bias conditions. The symmetric reconfigurable switching and memory operations of the R-FBFETs enable the LIM inverter to perform logic and memory operations for a long retention time without a power supply.",

keywords = "double-gated structures, inverters, logic-in-memory, positive feedback loop mechanisms, reconfigurable",

author = "Yunwoo Shin and Jaemin Son and Juhee Jeon and Kyoungah Cho and Sangsig Kim",

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AU - Shin, Yunwoo

AU - Son, Jaemin

AU - Jeon, Juhee

AU - Cho, Kyoungah

AU - Kim, Sangsig

PY - 2023/8

Y1 - 2023/8

N2 - The reconfigurable feedback field-effect transistors (R-FBFETs) with a double-gated structure are designed and the logic and memory operations of a logic-in-memory (LIM) inverter comprising two R-FBFETs are investigated. The R-FBFETs exhibit an extremely low subthreshold swing of ≈1 mV dec−1, a high on/off current ratio of ≈107, and a long retention time of 10 s, owing to a positive feedback loop mechanism. The on-current ratio of the p- to n-channel modes is 1.03, which indicates a high degree of reconfigurability. The LIM inverter retains the output logic “1” and “0” states for over 50 s under zero-bias conditions. The symmetric reconfigurable switching and memory operations of the R-FBFETs enable the LIM inverter to perform logic and memory operations for a long retention time without a power supply.

AB - The reconfigurable feedback field-effect transistors (R-FBFETs) with a double-gated structure are designed and the logic and memory operations of a logic-in-memory (LIM) inverter comprising two R-FBFETs are investigated. The R-FBFETs exhibit an extremely low subthreshold swing of ≈1 mV dec−1, a high on/off current ratio of ≈107, and a long retention time of 10 s, owing to a positive feedback loop mechanism. The on-current ratio of the p- to n-channel modes is 1.03, which indicates a high degree of reconfigurability. The LIM inverter retains the output logic “1” and “0” states for over 50 s under zero-bias conditions. The symmetric reconfigurable switching and memory operations of the R-FBFETs enable the LIM inverter to perform logic and memory operations for a long retention time without a power supply.

KW - double-gated structures

KW - inverters

KW - logic-in-memory

KW - positive feedback loop mechanisms

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Logic-In-Memory Characteristics of Reconfigurable Feedback Field-Effect Transistors with Double-Gated Structure

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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