Long-Term reliability of Si-Si0.7Ge0.3-Si HBTs from accelerated lifetime testing

Zhengqiang Ma; Jae-Sung Rieh; Pallab Bhattacharya; Samuel A. Alterovitz; George E. Ponchak; Edward T. Croke

doi:10.1109/SMIC.2001.942352

Long-Term reliability of Si-Si_0.7Ge_0.3-Si HBTs from accelerated lifetime testing

Zhengqiang Ma, Jae-Sung Rieh, Pallab Bhattacharya, Samuel A. Alterovitz, George E. Ponchak, Edward T. Croke

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

Accelerated lifetime tests were performed on double-mesa structure Si-Si_0.7Ge_0.3-Si npn heterojunction bipolar transistors, grown by molecular beam epitaxy, in the temperature range of 175°C-275°C. The transistors (with 5×20 μm² emitter area) have DC current gains ∼40-50 and f_T and f_max of up to 22 GHz and 25 GHz, respectively. It is found that a gradual degradation in these devices is caused by the recombination enhanced impurity diffusion (REID) of boron atoms from the p-Type base region and the associated formation of parasitic energy barriers to electron transport from the emitter to collector layers. This REID has been quantitatively modeled and explained to the first order of approximation, and the agreement with measured data is good. The mean time to failure (MTTF) of these devices at room temperature under 1.35×10⁴ A/cm² current density operation is estimated from extrapolation of the Arrhenius plots of device lifetime versus reciprocal temperature. The results of the reliability tests offer valuable feedback for SiGe heterostructure design in order to improve the long-Term reliability of the devices and circuits made with them.

Original language	English
Title of host publication	2001 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2001
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	122-130
Number of pages	9
ISBN (Print)	0780371291, 9780780371293
DOIs	https://doi.org/10.1109/SMIC.2001.942352
Publication status	Published - 2001
Externally published	Yes
Event	3rd IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2001 - Ann Arbor, United States Duration: 2001 Sept 14 → …

Other

Other	3rd IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2001
Country/Territory	United States
City	Ann Arbor
Period	01/9/14 → …

Keywords

Circuit testing
Degradation
Heterojunction bipolar transistors
Impurities
Life estimation
Lifetime estimation
Molecular beam epitaxial growth
Performance evaluation
Spontaneous emission
Temperature distribution

ASJC Scopus subject areas

General Computer Science

Access to Document

10.1109/SMIC.2001.942352

Cite this

Ma, Z., Rieh, J.-S., Bhattacharya, P., Alterovitz, S. A., Ponchak, G. E., & Croke, E. T. (2001). Long-Term reliability of Si-Si_0.7Ge_0.3-Si HBTs from accelerated lifetime testing. In 2001 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2001 (pp. 122-130). Article 942352 Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/SMIC.2001.942352

Long-Term reliability of Si-Si_0.7Ge_0.3-Si HBTs from accelerated lifetime testing. / Ma, Zhengqiang; Rieh, Jae-Sung; Bhattacharya, Pallab et al.
2001 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2001. Institute of Electrical and Electronics Engineers Inc., 2001. p. 122-130 942352.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Ma, Z, Rieh, J-S, Bhattacharya, P, Alterovitz, SA, Ponchak, GE & Croke, ET 2001, Long-Term reliability of Si-Si_0.7Ge_0.3-Si HBTs from accelerated lifetime testing. in 2001 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2001., 942352, Institute of Electrical and Electronics Engineers Inc., pp. 122-130, 3rd IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2001, Ann Arbor, United States, 01/9/14. https://doi.org/10.1109/SMIC.2001.942352

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title = "Long-Term reliability of Si-Si0.7Ge0.3-Si HBTs from accelerated lifetime testing",

abstract = "Accelerated lifetime tests were performed on double-mesa structure Si-Si0.7Ge0.3-Si npn heterojunction bipolar transistors, grown by molecular beam epitaxy, in the temperature range of 175°C-275°C. The transistors (with 5×20 μm2 emitter area) have DC current gains ∼40-50 and fT and fmax of up to 22 GHz and 25 GHz, respectively. It is found that a gradual degradation in these devices is caused by the recombination enhanced impurity diffusion (REID) of boron atoms from the p-Type base region and the associated formation of parasitic energy barriers to electron transport from the emitter to collector layers. This REID has been quantitatively modeled and explained to the first order of approximation, and the agreement with measured data is good. The mean time to failure (MTTF) of these devices at room temperature under 1.35×104 A/cm2 current density operation is estimated from extrapolation of the Arrhenius plots of device lifetime versus reciprocal temperature. The results of the reliability tests offer valuable feedback for SiGe heterostructure design in order to improve the long-Term reliability of the devices and circuits made with them.",

keywords = "Circuit testing, Degradation, Heterojunction bipolar transistors, Impurities, Life estimation, Lifetime estimation, Molecular beam epitaxial growth, Performance evaluation, Spontaneous emission, Temperature distribution",

author = "Zhengqiang Ma and Jae-Sung Rieh and Pallab Bhattacharya and Alterovitz, {Samuel A.} and Ponchak, {George E.} and Croke, {Edward T.}",

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AB - Accelerated lifetime tests were performed on double-mesa structure Si-Si0.7Ge0.3-Si npn heterojunction bipolar transistors, grown by molecular beam epitaxy, in the temperature range of 175°C-275°C. The transistors (with 5×20 μm2 emitter area) have DC current gains ∼40-50 and fT and fmax of up to 22 GHz and 25 GHz, respectively. It is found that a gradual degradation in these devices is caused by the recombination enhanced impurity diffusion (REID) of boron atoms from the p-Type base region and the associated formation of parasitic energy barriers to electron transport from the emitter to collector layers. This REID has been quantitatively modeled and explained to the first order of approximation, and the agreement with measured data is good. The mean time to failure (MTTF) of these devices at room temperature under 1.35×104 A/cm2 current density operation is estimated from extrapolation of the Arrhenius plots of device lifetime versus reciprocal temperature. The results of the reliability tests offer valuable feedback for SiGe heterostructure design in order to improve the long-Term reliability of the devices and circuits made with them.

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