Abstract
Accelerated lifetime tests were performed on double-mesa structure Si-Si0.7Ge0.3-Si npn heterojunction bipolar transistors, grown by molecular beam epitaxy, in the temperature range of 175°C-275°C. The transistors (with 5×20 μm2 emitter area) have DC current gains ∼40-50 and fT and fmax of up to 22 GHz and 25 GHz, respectively. It is found that a gradual degradation in these devices is caused by the recombination enhanced impurity diffusion (REID) of boron atoms from the p-Type base region and the associated formation of parasitic energy barriers to electron transport from the emitter to collector layers. This REID has been quantitatively modeled and explained to the first order of approximation, and the agreement with measured data is good. The mean time to failure (MTTF) of these devices at room temperature under 1.35×104 A/cm2 current density operation is estimated from extrapolation of the Arrhenius plots of device lifetime versus reciprocal temperature. The results of the reliability tests offer valuable feedback for SiGe heterostructure design in order to improve the long-Term reliability of the devices and circuits made with them.
Original language | English |
---|---|
Title of host publication | 2001 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2001 |
Publisher | Institute of Electrical and Electronics Engineers Inc. |
Pages | 122-130 |
Number of pages | 9 |
ISBN (Print) | 0780371291, 9780780371293 |
DOIs | |
Publication status | Published - 2001 |
Externally published | Yes |
Event | 3rd IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2001 - Ann Arbor, United States Duration: 2001 Sept 14 → … |
Other
Other | 3rd IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2001 |
---|---|
Country/Territory | United States |
City | Ann Arbor |
Period | 01/9/14 → … |
Keywords
- Circuit testing
- Degradation
- Heterojunction bipolar transistors
- Impurities
- Life estimation
- Lifetime estimation
- Molecular beam epitaxial growth
- Performance evaluation
- Spontaneous emission
- Temperature distribution
ASJC Scopus subject areas
- Computer Science(all)