Long-Term reliability of Si-Si_0.7Ge_0.3-Si HBTs from accelerated lifetime testing

Keyphrases

• Recombination 100%
• Impurity Diffusion 100%
• Accelerated Lifetime Testing 100%
• Long-term Reliability 100%
• Si0.7Ge0.3 100%
• Room Temperature 50%
• Current Density 50%
• Energy Barrier 50%
• First-order 50%
• Transistor 50%
• P-type 50%
• Molecular Beam Epitaxy 50%
• Temperature Range 50%
• Parasitic Energy 50%
• Heterojunction Bipolar Transistors 50%
• Boron Atom 50%
• DC Current Gain 50%
• Base Region 50%
• Device Lifetime 50%
• Mesostructure 50%
• Reliability Test 50%
• Fmax 50%
• Electron Transport 50%
• Degree of Approximation 50%
• Mean Time to Failure 50%
• Arrhenius Plot 50%
• Gradual Degradation 50%
• Heterostructure Engineering 50%
• Accelerated Life Test 50%
• SiGe Heterostructures 50%

Engineering

• Heterojunctions 100%
• Room Temperature 50%
• Measured Data 50%
• Temperature Range 50%
• Bipolar Transistor 50%
• Current Gain 50%
• Base Region 50%
• Energy Barrier 50%
• Reliability Analysis 50%
• Mean Time to Failure 50%
• Arrhenius Plot 50%
• Approximation Order 50%
• Direct Current 50%